Patents by Inventor Pikyung Moon

Pikyung Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GROWTH METHOD OF NITRIDE SEMICONDUCTOR LAYER AND LIGHT EMITTING DEVICE USING THE GROWTH METHOD
    Publication number: 20120187366
    Abstract: Growing a first nitride semiconductor layer on an AlxGayInI-x-yN (0<x<1, 0<y<1, 0<x+y<1) layer, a second step for reducing the thickness of the first nitride semiconductor layer by growth interruption and, growing a second nitride semiconductor layer having a band gap energy higher than that of the first nitride semiconductor layer on the first nitride semiconductor layer with the reduced thickness and a light emitting device using the growth method.
    Type: Application
    Filed: June 1, 2011
    Publication date: July 26, 2012
    Applicant: SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
    Inventors: Euijoon Yoon, Soon-Yong Kwon, Pikyung Moon