Patents by Inventor Pil Geun Kang
Pil Geun Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240266189Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.Type: ApplicationFiled: April 15, 2024Publication date: August 8, 2024Inventors: Jong Sik Paek, Doo Hyun Park, Seong Min Seo, Sung Geun Kang, Yong Song, Wang Gu Lee, Eun Young Lee, Seo Yeon Ahn, Pil Je Sung
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Patent number: 9893235Abstract: A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, under the transmissive substrate; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode. A transmissive resin layer is on the transmissive substrate and an insulating layer is between the insulating support member and the reflective electrode layer.Type: GrantFiled: February 10, 2015Date of Patent: February 13, 2018Assignee: LG INNOTEK CO., LTDInventors: Pil Geun Kang, Hee Seok Choi, Seok Beom Choi, Ju Won Lee, Deok Ki Hwang, Young Ju Han
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Patent number: 9673366Abstract: A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode on a part of the first semiconductor layer, an electrode layer on the second conductive semiconductor layer, an insulating layer on the electrode layer, a second electrode on the electrode layer, a support member on the insulating layer, a first connection electrode connected to the first electrode, and a second connection electrode connected to the second electrode. The insulating layer is disposed on a side surface of the light emitting structure and the part of the first semiconductor layer. The insulating layer includes a first layer and a second layer having a different material from the first layer. The first layer of the insulating layer has a refractive index different from the second layer of the insulating layer.Type: GrantFiled: October 28, 2015Date of Patent: June 6, 2017Assignee: LG Innotek Co., Ltd.Inventors: Deok Ki Hwang, Young Ju Han, Hee Seok Choi, Ju Won Lee, Pil Geun Kang, Seok Beom Choi
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Patent number: 9595640Abstract: Disclosed are a light emitting device, a light emitting device package and a light emitting module. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a support member under the light emitting structure; a reflective electrode layer between the second conductive semiconductor layer and the support member; and first to third connection electrodes spaced apart from each other in the support member. The second connection electrode is disposed between the first and third connection electrodes, the first and third connection electrodes are electrically connected with each other, and the support member is disposed at a peripheral portion of the first to third connection electrodes.Type: GrantFiled: January 2, 2013Date of Patent: March 14, 2017Assignee: LG Innotek Co., Ltd.Inventors: Seok Hun Bae, Seok Beom Choi, Pil Geun Kang, Deok Ki Hwang, Young Ju Han, Hee Seok Choi, Young Rok Park, Tae Don Lee, Hyun Sung Oh, Jee Hue Joo, Dong Woo Kang, Sung Sig Kim
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Publication number: 20160276558Abstract: A light-emitting diode having a multilayer bonding pad includes: a P1 layer disposed under a light-emitting structure and configured to improve ohmic contact and adhesion; a P3 layer disposed under the P1 layer and configured to prevent diffusion; a Sn-based metal layer disposed under the P1 layer and configured to enhance soldering weldability and prevent oxidation; a Cu-based P5 layer disposed on the Sn-based metal layer and configured to prevent the diffusion of Sn; and a P4 layer disposed between the P3 layer and the P5 layer and configured to suppress the reaction between the P5 layer and other layers.Type: ApplicationFiled: December 16, 2014Publication date: September 22, 2016Inventors: Pil Geun KANG, Ho Sub LEE, Seong Joo HWANG
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Patent number: 9397261Abstract: A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure under the transmissive substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode and including a ceramic-based thermal diffusion agent.Type: GrantFiled: November 15, 2012Date of Patent: July 19, 2016Assignee: LG Innotek Co., Ltd.Inventors: Pil Geun Kang, Hee Seok Choi, Seok Beom Choi, Ju Won Lee, Deok Ki Hwang, Young Ju Han
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Patent number: 9269878Abstract: A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.Type: GrantFiled: November 10, 2011Date of Patent: February 23, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Deok Ki Hwang, Young Ju Han, Hee Seok Choi, Ju Won Lee, Pil Geun Kang, Seok Beom Choi
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Publication number: 20160049546Abstract: A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode on a part of the first semiconductor layer, an electrode layer on the second conductive semiconductor layer, an insulating layer on the electrode layer, a second electrode on the electrode layer, a support member on the insulating layer, a first connection electrode connected to the first electrode, and a second connection electrode connected to the second electrode. The insulating layer is disposed on a side surface of the light emitting structure and the part of the first semiconductor layer. The insulating layer includes a first layer and a second layer having a different material from the first layer. The first layer of the insulating layer has a refractive index different from the second layer of the insulating layer.Type: ApplicationFiled: October 28, 2015Publication date: February 18, 2016Inventors: Deok Ki HWANG, Young Ju HAN, Hee Seok CHOI, Ju Won LEE, Pil Geun KANG, Seok Beom CHOI
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Publication number: 20150188011Abstract: Disclosed are a side-emitting type nitride semiconductor light-emitting chip and a light-emitting device comprising the same, which emit light from the sides so that the beam angle of the light can be increased and the need for a lead frame mold cup and a lens can be eliminated.Type: ApplicationFiled: December 29, 2014Publication date: July 2, 2015Inventor: Pil-Geun KANG
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Publication number: 20150179884Abstract: A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, under the transmissive substrate; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode. A transmissive resin layer is on the transmissive substrate and an insulating layer is between the insulating support member and the reflective electrode layer.Type: ApplicationFiled: February 10, 2015Publication date: June 25, 2015Inventors: Pil Geun KANG, Hee Seok CHOI, Seok Beom CHOI, Ju Won LEE, Deok Ki HWANG, Young Ju HAN
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Publication number: 20130193464Abstract: Disclosed are a light emitting device, a light emitting device package and a light emitting module. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a support member under the light emitting structure; a reflective electrode layer between the second conductive semiconductor layer and the support member; and first to third connection electrodes spaced apart from each other in the support member. The second connection electrode is disposed between the first and third connection electrodes, the first and third connection electrodes are electrically connected with each other, and the support member is disposed at a peripheral portion of the first to third connection electrodes.Type: ApplicationFiled: January 2, 2013Publication date: August 1, 2013Inventors: Seok Hun BAE, Seok Beom CHOI, Pil Geun KANG, Deok Ki HWANG, Young Ju HAN, Hee Seok CHOI, Young Rok PARK, Tae Don LEE, Hyun Sung OH, Jee Hue JOO, Dong Woo KANG, Sung Sig KIM
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Publication number: 20130119424Abstract: A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure under the transmissive substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode and including a ceramic-based thermal diffusion agent.Type: ApplicationFiled: November 15, 2012Publication date: May 16, 2013Inventors: Pil Geun KANG, Hee Seok CHOI, Seok Beom CHOI, Ju Won LEE, Deok Ki HWANG, Young Ju HAN
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Publication number: 20120299038Abstract: A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.Type: ApplicationFiled: November 10, 2011Publication date: November 29, 2012Inventors: Deok Ki Hwang, Young Ju Han, Hee Seok Choi, Ju Won Lee, Pil Geun Kang, Seok Beom Choi
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Patent number: 7868344Abstract: A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.Type: GrantFiled: September 8, 2006Date of Patent: January 11, 2011Assignee: Samsung LED Co., Ltd.Inventors: Pil Geun Kang, Bong Il Yi, Jae Ho Han, Dong Min Jeon
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Publication number: 20100308366Abstract: A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.Type: ApplicationFiled: September 8, 2006Publication date: December 9, 2010Inventors: Pil Geun Kang, Bong Il Yi, Jae Ho Han, Dong Min Jeon
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Patent number: 7687821Abstract: A GaN-based LED comprises a substrate; an an-type GaN layer formed on the substrate; an active layer formed on a predetermined region of the n-type GaN layer; a p-type GaN layer formed on the active layer; a transparent electrode formed on the p-type GaN layer; a p-electrode formed on the transparent electrode; an n-type electrode formed on the n-type GaN layer on which the active layer is not formed; and a protective film formed on a resulting structure between the transparent electrode and the n-type electrode, the protective film being composed of a plasma-oxidized transparent layer.Type: GrantFiled: December 29, 2006Date of Patent: March 30, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Dong Min Jeon, Jae Ho Han, Pil Geun Kang