Abstract: A thin film transistor is provided, which comprises at least an active layer, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are located on the active layer and spaced apart from each other; a channel is defined in the active layer between the source electrode and the drain electrode; edges of the active layer are aligned with outer edges of the source electrode and the drain electrode, the outer edge of the source electrode is an edge of the source electrode opposite to the drain electrode, and the outer edge of the drain electrode is an edge of the drain electrode opposite to the source electrode. Also, a method of manufacturing a thin film transistor is provided.

Abstract: A method for manufacturing a low-temperature polysilicon thin film comprises the steps of providing a substrate and forming a buffer layer on the substrate; forming a first amorphous silicon thin film on the buffer layer; forming catalyst particles on the first amorphous silicon thin film; forming a second amorphous silicon thin film to cover the first amorphous silicon thin film and the catalyst particles; and performing a crystallization of the first and second amorphous silicon thin films by using the catalyst particles so as to form the low-temperature polysilicon thin film.