Abstract: A method for classifying defects of an object includes irradiating lights having different polarizations onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different polarizations to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.

Abstract: In an apparatus and a method of measuring a thickness of a multilayer on a substrate, a spectrum of reflected light reflected from the substrate is measured. A plurality of recipe data, each corresponding to one of a plurality of hypothetical multilayers, is stored. One of the plurality of hypothetical multilayers is initially assumed to be the multilayer actually formed on the substrate. A plurality of theoretical spectra is calculated using one of the plurality of recipe data in accordance with various theoretical thicknesses of one of the plurality of hypothetical multilayers. The measured spectrum is compared with the plurality of theoretical spectra to determine a temporary thickness of the multilayer. A reliability of the temporary thickness of the multilayer is estimated. The temporary thickness is output as a thickness of the multilayer on the substrate when the reliability of the temporary thickness is within an allowable range.

Abstract: In an apparatus and a method of measuring a thickness of a multilayer on a substrate, a spectrum of reflected light reflected from the substrate is measured. A plurality of recipe data, each corresponding to one of a plurality of hypothetical multilayers, is stored. One of the plurality of hypothetical multilayers is initially assumed to be the multilayer actually formed on the substrate. A plurality of theoretical spectra is calculated using one of the plurality of recipe data in accordance with various theoretical thicknesses of one of the plurality of hypothetical multilayers. The measured spectrum is compared with the plurality of theoretical spectra to determine a temporary thickness of the multilayer. A reliability of the temporary thickness of the multilayer is estimated. The temporary thickness is output as a thickness of the multilayer on the substrate when the reliability of the temporary thickness is within an allowable range.

Abstract: A method for classifying defects of an object includes irradiating lights having different wavelengths onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different wavelengths to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.

Abstract: Wafer inspection system and method which are suitable for inspection of highly integrated semiconductor devices. The wafer inspection system includes an apparatus for selectively inspecting conductive pattern defects, which includes a sensor for scanning the surface of a wafer in a noncontact manner and an RLC circuit which is connected to the sensor and converts a signal obtained from the sensor into an electrical characteristic; and an image processing computer which is connected to the apparatus for selectively inspecting conductive pattern defects. Only conductive defects are selectively extracted, thereby increasing inspection efficiency.

Abstract: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches.

Abstract: A method of measuring the thickness of a thin layer, by which the thickness of a top layer formed on the surface of a wafer can be detected in real time, and an apparatus therefor. This method includes irradiating light onto a cell and obtaining luminance from reflected light, detecting the thickness of a thin layer in an oxide site which is adjacent to the cell, repeating the irradiating and detecting steps to obtain a plurality of luminance values from cells formed on the wafer and a plurality of thickness values of thin layers in oxide sites that are adjacent to the cells, and employing a thickness calculation formula for calculating the thickness of a top layer using the plurality of luminance values and plurality of thickness values obtained in the prior steps.

Abstract: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches.

Abstract: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches.