Abstract: A method for fabricating a thin film transistor substrate includes forming a buffer layer including at least one film on a base substrate, planarizing a surface of the buffer layer, and forming a thin film transistor on the buffer layer.

Abstract: A method for fabricating a thin film transistor substrate includes forming a buffer layer including at least one film on a base substrate, planarizing a surface of the buffer layer, and forming a thin film transistor on the buffer layer.

Abstract: A display device includes a first optical resonance layer on a substrate, a switching structure on the first optical resonance layer, a first electrode on the switching structure, a light emitting structure on the first electrode, and a second electrode on the emitting structure. The switching structure may include a switching device and an optical distance controlling insulation layer covering the switching device. A first optical resonance distance for an optical resonance of the light may be provided between an upper face of the first optical resonance layer and a bottom face of the second electrode.

Abstract: A display device includes: a first sub-pixel and a second sub-pixel, wherein the first sub-pixel includes: a first light emitting diode coupled between a first node and a second node; a first transistor configured to turn off the first light emitting diode by lowering a voltage of the first node below a voltage of the second node by providing a first initialization voltage to the first node; and a second transistor configured to turn on the first light emitting diode by increasing the voltage of the first node above the voltage of the second node by providing a first driving current to the first node, wherein the second sub-pixel includes a second light emitting diode, wherein a capacitance of the first light emitting diode is higher than a capacitance of the second light emitting diode.

Abstract: A display device includes a first optical resonance layer on a substrate, a switching structure on the first optical resonance layer, a first electrode on the switching structure, a light emitting structure on the first electrode, and a second electrode on the emitting structure. The switching structure may include a switching device and an optical distance controlling insulation layer covering the switching device. A first optical resonance distance for an optical resonance of the light may be provided between an upper face of the first optical resonance layer and a bottom face of the second electrode.

Abstract: A display device includes a first optical resonance layer on a substrate, a switching structure on the first optical resonance layer, a first electrode on the switching structure, a light emitting structure on the first electrode, and a second electrode on the emitting structure. The switching structure may include a switching device and an optical distance controlling insulation layer covering the switching device. A first optical resonance distance for an optical resonance of the light may be provided between an upper face of the first optical resonance layer and a bottom face of the second electrode.

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs.

Abstract: Provided is a white organic light emitting device including an anode, a cathode and an organic layer disposed therebetween, the organic layer having a structure wherein an arrangement of a green emissive layer and a blue emissive layer is formed on both surfaces of a red emissive layer such that the resultant structure is symmetrical around the red emissive layer, and a spacer layer is disposed between opposing surfaces of the blue emissive layer and the green emissive layer, where the white organic light emitting device including this structure exhibits a constant luminescence spectra irrespective of any change in current density. A method of forming the white organic light emitting device is also disclosed.

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs.

Abstract: A display device includes a first optical resonance layer on a substrate, a switching structure on the first optical resonance layer, a first electrode on the switching structure, a light emitting structure on the first electrode, and a second electrode on the emitting structure. The switching structure may include a switching device and an optical distance controlling insulation layer covering the switching device. A first optical resonance distance for an optical resonance of the light may be provided between an upper face of the first optical resonance layer and a bottom face of the second electrode.

Abstract: Provided is a white organic light emitting device including an anode, a cathode and an organic layer disposed therebetween, the organic layer having a structure wherein an arrangement of a green emissive layer and a blue emissive layer is formed on both surfaces of a red emissive layer such that the resultant structure is symmetrical around the red emissive layer, and a spacer layer is disposed between opposing surfaces of the blue emissive layer and the green emissive layer, where the white organic light emitting device including this structure exhibits a constant luminescence spectra irrespective of any change in current density. A method of forming the white organic light emitting device is also disclosed.

Abstract: Provided is a white organic light emitting device including an anode, a cathode and an organic layer disposed therebetween, the organic layer having a structure wherein an arrangement of a green emissive layer and a blue emissive layer is formed on both surfaces of a red emissive layer such that the resultant structure is symmetrical around the red emissive layer, and a spacer layer is disposed between opposing surfaces of the blue emissive layer and the green emissive layer, where the white organic light emitting device including this structure exhibits a constant luminescence spectra irrespective of any change in current density. A method of forming the white organic light emitting device is also disclosed.

Abstract: An active optical filter transmits or blocks light according to whether or not a magnetic field is applied, and functions as an optical filter transmitting light having a predetermined wavelength when light is transmitted according to a magnetic field. The active optical filter includes: an optical filter layer for transmitting or blocking light according to whether or not a magnetic field is applied; and a magnetic field applying unit surrounding the optical filter layer for applying a magnetic field to the optical filter layer. The optical filter layer has a multi-layer thin layer structure which is formed of two kinds of thin layers having different respective refractive indices and sequentially and periodically stacked on a substrate.

Abstract: Provided is a method of fabricating an organic light emitting device using a solution process. The method includes forming an electrode on a lower substrate; depositing an organic active material solution containing at least one photoreactive material on the electrode to form an organic active material layer; and radiating light onto the organic active material layer so that a characteristic of the light varies according to the depth of the organic active material layer in order to gradually vary a molecular orientation structure in the organic active material layer according to the depths, thereby resulting in a carrier mobility gradient according to the depths of the organic active material layer.

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs.

Abstract: Provided is an organic light emitting device (OLED) having increased optical extraction efficiency. The OLED includes a transparent substrate, an optical path control layer made of an optical transmittance material on the transparent substrate, a transparent electrode, an organic light emitting layer that generated light, and a reflection electrode formed on the organic light emitting layer, which are sequentially stacked. The refractive index And thickness of the optical path control layer are optimized.

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs.

Abstract: A diffraction grating including a substrate, and a grating member formed on the substrate, the grating member having a stepped structure including steps, the number of which corresponds to an odd number greater than or equal to three to provide an odd phase structure. The heights of the steps of the grating member are determined such that the light beams diffracted by their corresponding steps substantially have a phase difference of ? with reference to a diffracted light beam of a reference wavelength.

Abstract: An active optical filter transmits or blocks light according to whether or not a magnetic field is applied, and functions as an optical filter transmitting light having a predetermined wavelength when light is transmitted according to a magnetic field. The active optical filter includes: an optical filter layer for transmitting or blocking light according to whether or not a magnetic field is applied; and a magnetic field applying unit surrounding the optical filter layer for applying a magnetic field to the optical filter layer. The optical filter layer has a multi-layer thin layer structure which is formed of two kinds of thin layers having different respective refractive indices and sequentially and periodically stacked on a substrate.

Abstract: Provided is a method of fabricating an organic light emitting device using a solution process. The method includes forming an electrode on a lower substrate; depositing an organic active material solution containing at least one photoreactive material on the electrode to form an organic active material layer; and radiating light onto the organic active material layer so that a characteristic of the light varies according to the depth of the organic active material layer in order to gradually vary a molecular orientation structure in the organic active material layer according to the depths, thereby resulting in a carrier mobility gradient according to the depths of the organic active material layer.