Abstract: A method of fabricating a semiconductor device includes performing an optical proximity correction (OPC) operation on a layout and forming a photoresist pattern on a substrate using a photomask that is manufactured with the layout corrected by the OPC operation. The OPC operation includes sectioning the layout into a low-level patch and a high-level patch, performing a first OPC operation on the low-level patch, the first OPC operation including generating a first boundary correction pattern of a curvilinear shape on a boundary between the low-level patch and the high-level patch, performing a second OPC operation on the high-level patch, the second OPC operation including a second boundary correction pattern of a curvilinear shape on the boundary, and conforming the first boundary correction pattern and the second boundary correction pattern to each other to generate a conformed boundary correction pattern of a curvilinear shape.

Abstract: A mask forming method includes providing preliminary mask data including a Manhattan path such as a quadrangle, a bar, a polygon or a combination thereof based on a layout. Mask data including a curvilinear shape is prepared by correcting the preliminary mask data through application of an elliptical function, a B-spline curve, or a combination thereof. A mask pattern is formed on a mask substrate based on the mask data.

Abstract: A method of fabricating a semiconductor device includes performing an optical proximity correction (OPC) operation on a layout and forming a photoresist pattern on a substrate using a photomask that is manufactured with the layout corrected by the OPC operation. The OPC operation includes sectioning the layout into a low-level patch and a high-level patch, performing a first OPC operation on the low-level patch, the first OPC operation including generating a first boundary correction pattern of a curvilinear shape on a boundary between the low-level patch and the high-level patch, performing a second OPC operation on the high-level patch, the second OPC operation including a second boundary correction pattern of a curvilinear shape on the boundary, and conforming the first boundary correction pattern and the second boundary correction pattern to each other to generate a conformed boundary correction pattern of a curvilinear shape.

Abstract: The inventive concept provides an optical proximity correction (OPC) method using a multi-OPC model that can reduce a runtime of an entire OPC method by reducing an iteration number of simulations using a complex OPC model, and a method of manufacturing a mask by using the OPC method. The OPC method using the multi-OPC model can generate a re-target pattern to be applied to a simple OPC model, and can perform a simulation by using a complex OPC model on a target pattern after performing a simulation using the simple OPC model on the re-target pattern. Therefore, an iteration number of simulations using the complex OPC model can be reduced and, accordingly, an entire execution time of the OPC method can be reduced.

Abstract: A mask forming method includes providing preliminary mask data including a Manhattan path such as a quadrangle, a bar, a polygon or a combination thereof based on a layout. Mask data including a curvilinear shape is prepared by correcting the preliminary mask data through application of an elliptical function, a B-spline curve, or a combination thereof. A mask pattern is formed on a mask substrate based on the mask data.

Abstract: The inventive concept provides an optical proximity correction (OPC) method using a multi-OPC model that may reduce the runtime of an entire OPC method by reducing an iteration number of simulations using a complex OPC model, and a method of manufacturing a mask by using the OPC method. The OPC method using a multi-OPC model may generate a re-target pattern to be applied to a simple OPC model, and may perform simulation by using a complex OPC model on a target pattern after performing simulation using the simple OPC model on the re-target pattern. Therefore, an iteration number of simulations using the complex OPC model may be reduced and, accordingly, an entire execution time of the OPC method may be reduced.

Abstract: A solid-phase permethylation procedure is described. For example, solid-phase permethylation can be utilized to prepare permethylated linear and branched, neutral and sialylated oligosaccharides, which can be analyzed by MALDI-MS.

Abstract: A solid-phase permethylation procedure is described. For example, solid-phase permethylation can be utilized to prepare permethylated linear and branched, neutral and sialylated oligosaccharides, which can be analyzed by MALDI-MS.

Abstract: Specific glycomic profiles derived from human blood sera of breast cancer patients and prostate cancer patients were compared to those of disease-free females and males, respectively. The profiles were acquired using MALDI-MS of permethylated N-glycans released from 10-?l sample aliquots. Quantitative permethylation was attained using solid-phase permethylation. Principal component analysis of the glycomic profiles revealed significant differences among the two sets (diseased vs. non-diseased), allowing their distinct clustering. Several sialylated and fucosylated N-glycan structures were found to be useful as biomarkers for cancer, particularly breast cancer or prostate cancer.

Abstract: A solid-phase permethylation procedure is described. For example, solid-phase permethylation can be utilized to prepare permethylated linear and branched, neutral and sialylated oligosaccharides, which can be analyzed by MALDI-MS.