Abstract: Microelectronic die package structures formed according to some embodiments may include a substrate and a die having a first side and a second side. The first side of the die is coupled to the substrate, and a die backside layer is on the second side of the die. The die backside layer includes a plurality of unfilled grooves in the die backside layer. Each of the unfilled grooves has an opening at a surface of the die backside layer, opposite the second side of the die, and extends at least partially through the die backside layer.

Abstract: Microelectronic die package structures formed according to some embodiments may include a substrate having one or more solder structures. A first set of solder structures is located in a peripheral region of the substrate and a second set of solder structures is located in a central region of the substrate. A height of individual ones of the second set of solder structures is greater than a height of individual ones of the first set of solder structures. A die having a first side and a second side includes one or more conductive die pads on the first side, where individual ones of the conductive die pads are on individual ones of the first set solder structures and on individual ones of the second set solder structures. A die backside layer is on the second side of the die.

Abstract: Microelectronic die package structures formed according to some embodiments may include a thermal compression bonding (TCB) assembly including a bond head with a first thermal zone separated from a second thermal zone by a thermal separator, the thermal separator extending through a thickness of the bond head. A bond head nozzle is coupled to a first side of the bond head, where the bond head nozzle includes one or more nozzle channels extending through a thickness of the bond head nozzle.

Abstract: Microelectronic die package structures formed according to some embodiments may include a substrate comprising one or more conductive interconnect structures on a surface of the substrate. One or more support features are on one or more peripheral regions of the surface of the substrate. A first side of a die is coupled to the one or more conductive interconnect structures and is over the one or more support features. A die backside layer is on the second side of the die.

Abstract: Microelectronic die package structures formed according to some embodiments may include a thermal compression bonding (TCB) tool including a pedestal having a convex surface to receive a package substrate, a bond head to compress a die against the package substrate, and a heat source thermally coupled to at least one of the pedestal or the bond head.

Abstract: Embodiments include an electronics package and methods of forming such packages. In an embodiment, the electronics package comprises a first package substrate. In an embodiment, the first package substrate comprises, a die embedded in a mold layer, a thermal interface pad over a surface of the die, and a plurality of solder balls over the thermal interface pad. In an embodiment, the thermal interface pad and the solder balls are electrically isolated from circuitry of the electronics package. In an embodiment, the electronics package further comprises a second package substrate over the first package substrate.

Abstract: Embodiments include an electronics package and methods of forming such packages. In an embodiment, the electronics package comprises a first package substrate. In an embodiment, the first package substrate comprises, a die embedded in a mold layer, a thermal interface pad over a surface of the die, and a plurality of solder balls over the thermal interface pad. In an embodiment, the thermal interface pad and the solder balls are electrically isolated from circuitry of the electronics package. In an embodiment, the electronics package further comprises a second package substrate over the first package substrate.

Abstract: Some forms relate to an electronic assembly includes a first substrate that has a copper pad mounted to the first substrate. The electronic assembly further includes a second substrate that includes a copper redistribution layer mounted on the second substrate. The electronic assembly further includes bismuth-rich solder that includes 10-40 w.t. % tin. The bismuth-rich solder is electrically engaged with the copper pad and the copper redistribution layer. In some forms, the copper redistribution layer is another copper pad. The first substrate may include a memory die and the second substrate may include a logic die. In other forms, the first and second substrates may be part of a variety of different electronic components. The types of electronic components that are associated with the first and second substrates will depend on part on the application where the electronic assembly is be utilized (among other factors).

Abstract: Some forms relate to an electronic assembly includes a first substrate that has a copper pad mounted to the first substrate. The electronic assembly further includes a second substrate that includes a copper redistribution layer mounted on the second substrate. The electronic assembly further includes bismuth-rich solder that includes 10-40 w.t. % tin. The bismuth-rich solder is electrically engaged with the copper pad and the copper redistribution layer. In some forms, the copper redistribution layer is another copper pad. The first substrate may include a memory die and the second substrate may include a logic die. In other forms, the first and second substrates may be part of a variety of different electronic components. The types of electronic components that are associated with the first and second substrates will depend on part on the application where the electronic assembly is be utilized (among other factors).

Abstract: Some example forms relate to a method of nondestructively measuring a geometry of an electrical component on a substrate. The method includes directing light at the electrical component. The light is at an original intensity. The method further includes measuring light that is reflected off of the electrical component. The reflected light includes undiffracted light and diffracted light. The diffracted light is at a diffracted intensity. The method further includes determining a ratio of diffracted intensity to original intensity and utilizing the ratio to determine a geometry of the electrical component.

Abstract: Embodiments of the present disclosure describe solder compounds for electrically coupling integrated circuit (IC) substrates as well as methods for using the solder compounds to couple IC subtrates. The solder compounds are formulated with lower Copper (Cu) percentages to prevent the formation of Cu rich intermettalic compounds (IMCs) which may undergo transitions at elevated temperatures resulting in void formation when NiPdAu or NiAu surface finishes are used on both sides of the solder interconnect. Additionally, nickel (Ni), may be included in the solder compounds to improve fatigue and/or creep properties. Other embodiments may be described and/or claimed.

Abstract: Electronic assemblies and solders used in electronic assemblies are described. One embodiment includes a die and a substrate, with a solder material positioned between the die and the substrate, the solder comprising at least 91 weight percent Sn, 0.4 to 1.0 weight percent Cu and at least one dopant selected from the group consisting of Ag, Bi, P, and Co. Other embodiments are described and claimed.

Abstract: Electronic assemblies and solders used in electronic assemblies are described. One embodiment includes a die and a substrate, with a solder material positioned between the die and the substrate, the solder comprising at least 91 weight percent Sn, 0.4 to 1.0 weight percent Cu and at least one dopant selected from the group consisting of Ag, Bi, P, and Co. Other embodiments are described and claimed.

Abstract: Electronic assemblies and solders used in electronic assemblies are described. One embodiment includes a die and a substrate, with a solder material positioned between the die and the substrate, the solder comprising at least 91 weight percent Sn, 0.4 to 1.0 weight percent Cu and at least one dopant selected from the group consisting of Ag, Bi, P, and Co. Other embodiments are described and claimed.