Abstract: An artificial intelligence calculation semiconductor device is provided. The artificial intelligence calculation semiconductor device comprising: a control unit; and a MAC (Multiply and Accumulator) calculator which executes a homomorphic encryption calculation through the control unit, wherein the MAC calculator includes an NTT (Numeric Theoretic Transform)/INTT (Inverse NTT) circuit which generates cipher texts by performing a homomorphic multiplication calculation through transformation or inverse transformation of data, a cipher text multiplier which executes a multiplication calculation between the cipher texts, a cipher text adder/subtractor which executes addition and/or subtraction calculations between the cipher texts, and a rotator which performs a cyclic shift of a slot of the cipher texts.

Abstract: A storage device is provided including an interface circuit configured to receive application information from a host; a field programmable gate array (FPGA); a neural processing unit (NPU); and a central processing unit (CPU) configured to select a hardware image from among a plurality of hardware images stored in a memory using the application information, and reconfigure the FPGA using the selected hardware image. The NPU is configured to perform an operation using the reconfigured FPGA.

Abstract: An operating method of a memory controller includes generating a random value using a seed, generating encrypted intermediate data by encrypting plaintext data using the random value, and storing the seed and the intermediate data in a memory device. Ciphertext data is generated using the seed and the intermediate data based on Ring Learning with Error (RLWE).

Abstract: An artificial intelligence calculation semiconductor device is provided. The artificial intelligence calculation semiconductor device comprising: a control unit; and a MAC (Multiply and Accumulator) calculator which executes a homomorphic encryption calculation through the control unit, wherein the MAC calculator includes an NTT (Numeric Theoretic Transform)/INTT (Inverse NTT) circuit which generates cipher texts by performing a homomorphic multiplication calculation through transformation or inverse transformation of data, a cipher text multiplier which executes a multiplication calculation between the cipher texts, a cipher text adder/subtractor which executes addition and/or subtraction calculations between the cipher texts, and a rotator which performs a cyclic shift of a slot of the cipher texts.

Abstract: An operating method of a memory controller includes generating a random value using a seed, generating encrypted intermediate data by encrypting plaintext data using the random value, and storing the seed and the intermediate data in a memory device. Ciphertext data is generated using the seed and the intermediate data based on Ring Learning with Error (RLWE).

Abstract: A storage device is provided including an interface circuit configured to receive application information from a host; a field programmable gate array (FPGA); a neural processing unit (NPU); and a central processing unit (CPU) configured to select a hardware image from among a plurality of hardware images stored in a memory using the application information, and reconfigure the FPGA using the selected hardware image. The NPU is configured to perform an operation using the reconfigured FPGA.

Abstract: A method of setting a read voltage by a memory controller and a storage device are provided. The method includes controlling a memory device to read data from memory cells by applying a test read voltage to a selected word line; receiving, from the memory device, cell count information corresponding to a read operation of the memory device, and renewing the test read voltage by using the cell count information and a cost function to find an optimum read voltage, the cost function being determined for each read voltage level; and determining a read voltage by performing the controlling of the memory device and the renewing of the test read voltage at least once.

Abstract: An apparatus that receives a non-binary polar code through a channel includes a low-complexity decoder and a memory. The low-complexity decoder is configured to selectively calculate first common terms for input symbols in the non-binary polar code other than a first input symbol corresponding to a first target output symbol. The selective calculation uses a lower triangular kernel and log likelihood ratios of the input symbols generated based on a channel characteristic of the channel. The low-complexity decoder is also configured to calculate log likelihood ratios of the first target output symbol using the first common terms and to determine a value of the first target output symbol based on the log likelihood ratios of the first target output symbol. The memory is accessible by the low-complexity decoder and is configured to store the first common terms.

Abstract: A method of operating a resistive memory system including a plurality of layers may include receiving a write request and first data corresponding to a first address, converting the first address into a second address and assigning n (n is an integer equal to or larger than 2) pieces of sub-region data generated from the first data to the plurality of layers, and writing the n pieces of sub-region data to at least two layers according to the second address.

Abstract: An apparatus that receives a non-binary polar code through a channel includes a low-complexity decoder and a memory. The low-complexity decoder is configured to selectively calculate first common terms for input symbols in the non-binary polar code other than a first input symbol corresponding to a first target output symbol. The selective calculation uses a lower triangular kernel and log likelihood ratios of the input symbols generated based on a channel characteristic of the channel. The low-complexity decoder is also configured to calculate log likelihood ratios of the first target output symbol using the first common terms and to determine a value of the first target output symbol based on the log likelihood ratios of the first target output symbol.

Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.

Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.

Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.

Abstract: A method of operating a memory system, having a non-volatile memory device, includes processing a response to a first request toward the memory device by using an original key, in response to the first request, generating and storing first parity data corresponding to the original key, and deleting the original key.

Abstract: A method of setting a read voltage by a memory controller and a storage device are provided. The method includes controlling a memory device to read data from memory cells by applying a test read voltage to a selected word line; receiving, from the memory device, cell count information corresponding to a read operation of the memory device, and renewing the test read voltage by using the cell count information and a cost function to find an optimum read voltage, the cost function being determined for each read voltage level; and determining a read voltage by performing the controlling of the memory device and the renewing of the test read voltage at least once.

Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.

Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.

Abstract: A method of operating a resistive memory system including a plurality of layers may include receiving a write request and first data corresponding to a first address, converting the first address into a second address and assigning n (n is an integer equal to or larger than 2) pieces of sub-region data generated from the first data to the plurality of layers, and writing the n pieces of sub-region data to at least two layers according to the second address.

Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.

Abstract: A method of operating a resistive memory system including a plurality of layers may include receiving a write request and first data corresponding to a first address, converting the first address into a second address and assigning n (n is an integer equal to or larger than 2) pieces of sub-region data generated from the first data to the plurality of layers, and writing the n pieces of sub-region data to at least two layers according to the second address.