Abstract: An embodiment solid electrolyte includes a first compound and a second compound. The first compound is represented by a first chemical formula Li7-aPS6-a(X11-bX2b)a, wherein X1 and X2 are the same or different and each represents F, Cl, Br, or I, and wherein 0<a?2 and 0<b<1, and the second compound is represented by a second chemical formula Li7-cP1-2dMdS6-c-3d(X11-eX2e)c, wherein X1 and X2 are the same or different and each represents F, Cl, Br, or I, wherein M represents Ge, Si, Sn, or any combination thereof, and wherein 0<c?2, 0<d<0.5, and 0<e<1.

Abstract: A cathode active material for a lithium secondary battery includes lithium transition metal oxide particles, wherein the lithium transition metal oxide particles may include first lithium transition metal oxide particles (first particles) including an interparticular pore and second lithium transition metal oxide particles (second particles) having an average particle diameter within a range of a diameter of the interparticular pore, measured by mercury intrusion porosimetry. By including first particles including an interparticular pore and second particles having an average particle diameter within a range of a diameter of the interparticular pore measured by mercury intrusion porosimetry, the cathode active material may have a reduced interparticular pore present therein. Accordingly, the cathode active material may have an improved pellet density. Consequently, when a lithium secondary battery is manufactured using the cathode active material, the energy density thereof may improve.

Abstract: A cathode active material for a lithium secondary battery includes lithium transition metal oxide particles, wherein the lithium transition metal oxide particles may include first lithium transition metal oxide particles (first particles) including an interparticular pore and second lithium transition metal oxide particles (second particles) having an average particle diameter within a range of a diameter of the interparticular pore, measured by mercury intrusion porosimetry. By including first particles including an interparticular pore and second particles having an average particle diameter within a range of a diameter of the interparticular pore measured by mercury intrusion porosimetry, the cathode active material may have a reduced interparticular pore present therein. Accordingly, the cathode active material may have an improved pellet density. Consequently, when a lithium secondary battery is manufactured using the cathode active material, the energy density thereof may improve.

Abstract: An organic electroluminescence device is disclosed which includes: a substrate; a thin film transistor formed on the substrate; a first electrode formed on the substrate provided with the thin film transistor; an organic light emission layer and a second electrode sequentially formed on the first electrode; and a first light absorption layer formed over the thin film transistor and configured to shield light emitted from the organic light emission layer. As such, the organic electroluminescence device employing the oxide thin film transistor can secure reliability against light.

Abstract: The present invention relates to a liquid crystal display and a driving method thereof. The liquid crystal display of the present invention includes a pixel electrode including: a first subpixel electrode, a second subpixel electrode, and a third subpixel electrode electrically separated from each other; a first thin film transistor connected to the first subpixel electrode; a second thin film transistor connected to the second subpixel electrode; a third thin film transistor connected to the third subpixel electrode; a fourth thin film transistor connected to the second subpixel electrode and the third subpixel electrode; a first gate line connected to the first to third thin film transistors; a second gate line connected to the fourth thin film transistor; a data line connected to the first and second thin film transistors; and a storage electrode line connected to the third thin film transistor.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT includes an oxide semiconductor layer; a protective layer overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode across the channel region; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: A method for preparing a positive active material for a lithium ion secondary battery, the method including obtaining a mixture by mixing a lithium containing compound and metal oxide, distributing powder of a lithium containing compound into a furnace, and heat treating the mixture in the furnace, wherein a thermal decomposition temperature of the lithium containing compound power distributed into the furnace is lower than that of the lithium containing compound mixed with the metal oxide.

Abstract: An organic electroluminescence device is disclosed which includes: a substrate; a thin film transistor formed on the substrate; a first electrode formed on the substrate provided with the thin film transistor; an organic light emission layer and a second electrode sequentially formed on the first electrode; and a first light absorption layer formed over the thin film transistor and configured to shield light emitted from the organic light emission layer. As such, the organic electroluminescence device employing the oxide thin film transistor can secure reliability against light.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin film transistor array substrate may include an insulating substrate on which a gate electrode is formed, a gate insulating film formed on the insulating substrate, an oxide semiconductor pattern disposed on the gate insulating film, an anti-etching pattern formed on the oxide semiconductor pattern, and a source electrode and a drain electrode formed on the anti-etching pattern. The oxide semiconductor pattern may include an edge portion positioned between the source electrode and the drain electrode, and the edge portion may include at least one conductive region and at least one non-conductive region.

Abstract: The present invention relates to a liquid crystal display and a driving method thereof. The liquid crystal display of the present invention includes a pixel electrode including: a first subpixel electrode, a second subpixel electrode, and a third subpixel electrode electrically separated from each other; a first thin film transistor connected to the first subpixel electrode; a second thin film transistor connected to the second subpixel electrode; a third thin film transistor connected to the third subpixel electrode; a fourth thin film transistor connected to the second subpixel electrode and the third subpixel electrode; a first gate line connected to the first to third thin film transistors; a second gate line connected to the fourth thin film transistor; a data line connected to the first and second thin film transistors; and a storage electrode line connected to the third thin film transistor.

Abstract: Embodiments of the present invention relate to a liquid crystal display and a driving method thereof. According to an embodiment, the liquid crystal display comprises a pixel electrode having a first subpixel electrode, a second subpixel electrode, and a third subpixel electrode electrically separated from each other. The liquid crystal display comprises a first thin film transistor connected to the first subpixel electrode, a second thin film transistor connected to the second subpixel electrode, a third thin film transistor connected to the third subpixel electrode, and a fourth thin film transistor connected to the second subpixel electrode and the third subpixel electrode. The liquid crystal display comprises a first gate line connected to the first to third thin film transistors, a second gate line connected to the fourth thin film transistor, a data line connected to the first and second thin film transistors, and a storage electrode line connected to the third thin film transistor.

Abstract: An oxide thin-film transistor (TFT) substrate that includes: a substrate, a gate line, a data line, an oxide TFT, and a pixel electrode. An oxide layer of the oxide TFT includes a first region that has semiconductor characteristics and a channel, and a second region that is conductive and surrounds the first region. A portion of the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line.

Abstract: Provided are a composite positive electrode active material, an electrode for a lithium secondary battery including the composite positive electrode active material, and a lithium secondary battery, and more particularly, a composite positive electrode active material including lithium composite oxide, activated carbon, and carbon black, an electrode for a lithium secondary battery including the composite positive electrode active material, and a lithium secondary battery. The present disclosure may provide a lithium secondary battery having improved rate characteristics in a low-temperature atmosphere.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.