Patents by Inventor Pil-Seon Ji

Pil-Seon Ji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a storage node of a capacitor that prevents HSG(Hemi-Spherical Grain) bridging
    Patent number: 6391712
    Abstract: The method of forming a lower electrode of a capacitor includes forming an first insulation film over a substrate, and forming a trench in the first insulation film to expose an electrical contact structure. Then, a second insulation film is formed along sidewalls of the trench, and an amorphous silicon film is formed in the trench. The second insulation film is removed so that sidewalls of the amorphous silicon film are separated from sidewalls of the trench, and HSG is grown on exposed surfaces of the amorphous silicon film.
    Type: Grant
    Filed: April 26, 2001
    Date of Patent: May 21, 2002
    Assignee: Hynix Semiconductor, Inc.
    Inventor: Pil-Seon Ji
  • Method of forming a storage node of a capacitor that prevents HSG bridging
    Publication number: 20020019094
    Abstract: The method of forming a lower electrode of a capacitor includes forming an first insulation film over a substrate, and forming a trench in the first insulation film to expose an electrical contact structure. Then, a second insulation film is formed along sidewalls of the trench, and an amorphous silicon film is formed in the trench. The second insulation film is removed so that sidewalls of the amorphous silicon film are separated from sidewalls of the trench, and HSG is grown on exposed surfaces of the amorphous silicon film.
    Type: Application
    Filed: April 26, 2001
    Publication date: February 14, 2002
    Inventor: Pil-Seon Ji