Abstract: The present invention relates to a method for prolonging life time of a dry etching chamber. A neck portion of the dry etching chamber, according to the present invention, is divided three sections, namely a first section, a second section and a third section in sequence from top of the neck portion to bottom thereof and each section has the same area. A first phase of a two-phase connection method, according to the present invention, then proceeds as the following. The first section is surrounded by an electrode coil connected to a rf power and the second section is surrounded by an electrode coil connected to the ground, not touching the electrode coil connected to the rf power, so that a plasma field within the dry etching chamber can be produced to perform a dry etching. The dry etching can be applied in production line until before life time of the first section comes to an end, i.e. about 95 % of life time of the dry etching chamber disclosed in prior art.