Abstract: Methods for making semiconductor device having improve contact structures including the operations of depositing a first dielectric material, depositing a barrier material over the first dielectric material, depositing a second dielectric material over the barrier material, etching a two-slope contact opening with an upper sidewall angle of the opening through the second dielectric material that is less than a lower sidewall angle of the opening through the first dielectric material, and filling the two-slope contact opening with a conductive material, the conductive material.

Abstract: A semiconductor device includes a gate structure on a substrate and a dielectric film stack over the gate structure and the substrate, where the dielectric film stack includes a first inter layer dielectric (ILD) over the substrate and the gate structure, a barrier layer over the first ILD, a second ILD over the barrier layer, and a contact extending through the dielectric film stack. An upper portion of a contact sidewall has a first slope, a lower portion of the contact sidewall has a second slope different from the first slope, and a transition from the first slope to the second slope occurs at a portion of the contact extending through the barrier layer.

Abstract: Methods for making semiconductor device having improve contact structures including the operations of depositing a first dielectric material, depositing a barrier material over the first dielectric material, depositing a second dielectric material over the barrier material, etching a two-slope contact opening with an upper sidewall angle of the opening through the second dielectric material that is less than a lower sidewall angle of the opening through the first dielectric material, and filling the two-slope contact opening with a conductive material, the conductive material.

Abstract: A semiconductor device includes a gate structure on a substrate and a dielectric film stack over the gate structure and the substrate, where the dielectric film stack includes a first inter layer dielectric (ILD) over the substrate and the gate structure, a barrier layer over the first ILD, a second ILD over the barrier layer, and a contact extending through the dielectric film stack. An upper portion of a contact sidewall has a first slope, a lower portion of the contact sidewall has a second slope different from the first slope, and a transition from the first slope to the second slope occurs at a portion of the contact extending through the barrier layer.