Patents by Inventor Pin-Chia LIAO

Pin-Chia LIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • UMBRELLA SHARING SYSTEM AND GATE DEVICE THEREOF
    Publication number: 20240247526
    Abstract: The instant disclosure provides a gate device and an umbrella sharing system which utilizes the gate device. The gate device includes a base, an actuator, a pair of gate plates, and an identification sensor. The actuator is disposed on a top surface of the base and includes a latch extending downward through the base. The pair of gate plates are disposed on a bottom surface of the base, and each of the gate plates includes a guiding structure and a locking structure. A waiting zone for receiving an umbrella is defined between the two guiding structures. The latch of the actuator is driven to engage with the locking structures to limit the movement of the gate plates. The identification sensor is above the waiting zone and disposed on the base and is configured to identify the identity of an umbrella which enters the waiting zone.
    Type: Application
    Filed: January 18, 2024
    Publication date: July 25, 2024
    Inventors: Chun-Chia SU, Chi-Yao YU, Po-Feng WANG, Po Ying SU, Ting-Yuan CHENG, Hsin-En FANG, ShaoTing YEN, Pin Wei LIAO, An-Li TING, Hsien An WU, Po-Hsun SU
  • PHOTORESIST AND FORMATION METHOD THEREOF
    Publication number: 20240111210
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: May 9, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Pin-Chia LIAO, Ting-An LIN, Ting-An SHIH, Yu-Fang TSENG, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
  • PHOTORESIST AND FORMATION METHOD THEREOF
    Publication number: 20240112912
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: July 28, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Yu-Fang TSENG, Pin-Chia LIAO, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU