Patents by Inventor Pin-Chia LIAO

Pin-Chia LIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHOTORESIST AND FORMATION METHOD THEREOF
    Publication number: 20240111210
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: May 9, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Pin-Chia LIAO, Ting-An LIN, Ting-An SHIH, Yu-Fang TSENG, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
  • PHOTORESIST AND FORMATION METHOD THEREOF
    Publication number: 20240112912
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: July 28, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Yu-Fang TSENG, Pin-Chia LIAO, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU