Abstract: A method for forming a semiconductor structure includes forming strip patterns over a semiconductor substrate, and forming a patterned mask layer over the strip patterns. The first openings are arranged in an array. A pitch of the first openings in the first direction is smaller than a pitch of the first openings in a second direction. A first dimension of the first openings in the first direction is longer than a second dimension of the first openings in the second direction. The method also includes forming spacers to partially fill the first openings, removing the patterned mask layer to form trenches between the spacers, forming a conformal layer to cover the spacers and partially fill the first openings and the trenches, and etching the strip patterns using the conformal layer and the spacers as a mask, thereby cutting the strip patterns into island patterns.

Abstract: A method for forming a semiconductor memory structure includes the following steps. A first patterned hard mask layer is formed over a conductive material. The first patterned hard mask layer includes first strip patterns and a mesa pattern. The mesa pattern is connected with the first strip patterns. A second patterned hard mask layer is formed over the first patterned hard mask layer. The second patterned hard mask layer includes second strip patterns overlapping the first strip patterns and first wire patterns overlapping the mesa pattern. The first patterned hard mask layer is etched using the second patterned hard mask layer. The remaining portions of the first strip patterns form pad patterns. The remaining portions of the mesa pattern form second wire patterns. The pad patterns and the second wire patterns are transferred into the conductive material.