Abstract: A method of manufacturing a semiconductor structure forming a first diffusion layer on a first electrode layer and forming a core layer over the first diffusion layer. A second diffusion layer is formed over the core layer. A plurality of diffusion regions are formed in the second diffusion layer. A second electrode layer is formed over the second diffusion layer and in contact with the plurality of diffusion regions. The second diffusion layer is coupled to the plurality of diffusion regions through the second electrode layer. The substrate is sandwiched between the first electrode layer and the second electrode layer.

Abstract: A semiconductor structure includes a substrate having a first surface and a second surface opposite to the first surface. The semiconductor structure also includes a first diffusion layer disposed in the substrate and adjacent to the first surface, and a first electrode layer disposed on the first diffusion layer. The semiconductor structure further includes a second diffusion layer disposed in the substrate and adjacent to the second surface, and a plurality of diffusion regions disposed in the second diffusion layer. The semiconductor structure further includes a second electrode layer disposed on the second diffusion layer and in contact with the plurality of diffusion regions. The second diffusion layer is coupled to the plurality of diffusion regions through the second electrode layer. The substrate is sandwiched between the first electrode layer and the second electrode layer.

Abstract: A two-terminal rectifier includes a power MOSFET, a body diode, and a Schottky diode coupled between the first terminal and the second terminal. The two-terminal rectifier also has a power management circuit, a capacitor, a control circuit, and a driver circuit coupled between the first terminal and the second terminal. The two-terminal rectifier can be implemented in a two-pin package and can be used in a power converter for CCM operation.

Abstract: A two-terminal rectifier includes a power MOSFET, a body diode, and a Schottky diode coupled between the first terminal and the second terminal. The two-terminal rectifier also has a power management circuit, a capacitor, a control circuit, and a driver circuit coupled between the first terminal and the second terminal. The two-terminal rectifier can be implemented in a two-pin package and can be used in a power converter for CCM operation.

Abstract: A rectifier package is provided, which comprises a first rectifier die having an anode and a cathode conductively bonded to a first conductive film on a first surface. The rectifier package also comprises a second rectifier die having an anode and a cathode conductively bonded to the first conductive film on a second surface, which is opposite to the first surface. The first conductive film is in contact with both anodes or both cathodes of the first rectifier die and the second rectifier die.