Abstract: Some embodiments of the present application are directed towards an integrated circuit (IC). The integrated circuit includes a semiconductor substrate including a logic region and a memory cell region. A logic device is arranged on the logic region. A memory device is arranged on the memory cell region. An isolation structure extends into a top surface of the semiconductor substrate, and laterally separates the logic region from the memory cell region. The isolation structure includes dielectric material and has an uppermost surface and a slanted upper surface extending from the uppermost surface to an edge of the isolation structure proximate to memory cell region.

Abstract: A light source device includes a light guide plate, an optical adhesive, and a light source element. The light guide plate includes a light guide substrate and an enhancement layer. The light guide substrate has a light incident surface, a first surface, and a second surface. The first surface is opposite to the second surface, and the light incident surface extends between the first surface and the second surface. The enhancement layer is disposed on the light guide substrate. A thickness of the enhancement layer is from 1 micrometer to 25 micrometers and a first refractive index of the light guide substrate is greater than a second refractive index of the enhancement layer. The optical adhesive is interposed between the first surface of the light guide substrate and the optical adhesive. The light source element is disposed beside the light incident surface to emit light toward the light incident surface.

Abstract: The present disclosure relates to novel compounds that inhibit glucose-induced degradation-deficient (GID) E3 ligase, pharmaceutical compositions containing such compounds, and their use in prevention and treatment of cancer and related diseases and conditions.

Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

Abstract: The present application discloses a semiconductor structure. The semiconductor structure a top die and a bottom die, and the maximum die size is constrained to reticle dimension. Each die includes (1) core: computation circuits, (2) phy: analog circuit connecting to memory, (3) I/O: analog circuit connecting output elements, (4) SERDES: serial high speed analog circuit, (5) intra-stack connection circuit, and (6) cache memory. This semiconductor structure can be chapleted design for high wafer yield with least tape out masks for cost saving. The intra-stack connection circuit connects the top die and the bottom die in the shortest distance (about tens of micrometers), so as to provide high signal quality and power efficiency.

Abstract: Devices and method for forming a switch including a heater layer including a first heater pad, a second heater pad, and a heater line connecting the first heater pad and the second heater pad, a phase change material (PCM) layer positioned in a same vertical plane as the heater line, and a floating spreader layer including a first portion positioned in the same vertical plane as the heater line and the PCM layer, in which the first portion has a first width that is less than or equal to a distance between proximate sidewalls of the first heater pad and the second heater pad.

Abstract: The present application discloses a semiconductor structure and methods for manufacturing semiconductor structures. The semiconductor structure includes a plurality of bottom dies and a top die stacked on the bottom dies. The bottom dies receive power supplies through tiny through silicon vias (TSVs) formed in backside substrates of the bottom dies, while the top die receives power supplies through dielectric vias (TDVs) formed in a dielectric layer that covers the bottom dies. By enabling backside power delivery to the bottom die, more space can be provided for trace routing between stacked dies. Therefore, greater computation capability can be achieved within a smaller chip area with less power loss.

Abstract: A manufacturing method of housing structure of electronic device is provided. The manufacturing method includes stacking a first structural layer, a painting layer, and a second structural layer, wherein the painting layer is located between the first and the second structural layers. The layer stacked after the painting layer washes and squeezes at least a portion of the flowing painting layer to form a random texture pattern.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a first trench in the base and between the first fin and the second fin. The method includes forming an isolation layer over the base and in the first trench. The first fin and the second fin are partially in the isolation layer. The method includes forming a first gate stack over the first fin and the isolation layer. The method includes forming a second gate stack over the second fin and the isolation layer. The method includes removing a bottom portion of the base. The isolation layer passes through the base after the bottom portion of the base is removed.

Abstract: A fastener includes a bolt including a head and a threaded shank including a bare section proximate the head, a threaded end section, an intermediate section proximate the threaded end section and having a spiral trough, and a threaded section between the intermediate section and the bare section; and a hollow member including a head member and a malleable shank. The malleable shank has first, second and third holes.

Abstract: The present disclosure provides a movable electric device. The movable electric device includes a movable device body and a contact detection electrode. The movable device body has an electric drive means. The contact detection electrode is mounted on the movable device body. When the contact detection electrode _contacts diffusible dirt, a resistance, capacitance or impedance of the contact detection electrode varies.

Abstract: A bonded assembly includes an interposer; a semiconductor die that is attached to the interposer and including a planar horizontal bottom surface and a contoured sidewall; a high bandwidth memory (HBM) die that is attached to the interposer; and a dielectric material portion contacting the semiconductor die and the interposer. The contoured sidewall includes a vertical sidewall segment and a non-horizontal, non-vertical surface segment that is adjoined to a bottom edge of the vertical sidewall segment and is adjoined to an edge of the planar horizontal bottom surface of the semiconductor die. The vertical sidewall segment and the non-horizontal, non-vertical surface segment are in contact with the dielectric material portion. The contoured sidewall may provide a variable lateral spacing from the HBM die to reduce local stress in a portion of the HBM die that is proximal to the interposer.

Abstract: A semiconductor package assembly is provided. The semiconductor package assembly includes first semiconductor die, a second semiconductor die and a memory package. The first semiconductor die and the second semiconductor die are stacked on each other. The first semiconductor die includes a first interface and a third interface. The first interface overlaps and is electrically connected to the second interface arranged on the second semiconductor die. The third interface is arranged on a first edge of the first semiconductor die. The memory package is disposed beside the first semiconductor die, wherein the memory package is electrically connected to the first semiconductor die by the third interface.

Abstract: A photo mask includes a plurality of device features, a first assist feature, and a second assist feature. The device features are in a patterning region of a device region. The first assist feature are in the patterning region and adjacent to the device features. The first assist feature is for correcting an optical proximity effect in a photolithography process. The second assist feature is in a non-patterning region of the device region. The second assist feature is a sub-resolution correction feature, and a first distance between the second assist feature and one of the device features closest to the second assist feature is greater than a second distance between adjacent two of the device features.

Abstract: This disclosure is directed to solutions of detecting and classifying wafer defects using machine learning techniques. The solutions take only one coarse resolution digital microscope image of a target wafer, and use machine learning techniques to process the coarse SEM image to review and classify a defect on the target wafer. Because only one coarse SEM image of the wafer is needed, the defect review and classification throughput and efficiency are improved. Further, the techniques are not distractive and may be integrated with other defect detecting and classification techniques.

Abstract: An optical mechanism is provided, including a housing, a base, and a metal supporting member. The housing has a top cover and a sidewall connected to the top cover, wherein the top cover and the sidewall comprises plastic material. The base is connected to the housing, wherein an optical element is accommodated in a space between the housing and the base. At least a part of the metal supporting member is embedded in the housing.

Abstract: A fastener includes a bolt including a head, a threaded shank having a bare section proximate the head, an intermediate grooved section, and an end section; and a hollow member including a head and a malleable shank having a plurality of holes through the shank. The grooved section includes a plurality of longitudinal grooves and a plurality of arcuate troughs between two of the adjacent grooves. The end section includes a plurality of projections arranged in a plurality of spaced, annular sets, and a plurality of cavities arranged in a plurality of spaced, annular sets. Each cavity is disposed between two of the adjacent projections. Each projection is disposed between two of the adjacent cavities.

Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.

Abstract: A fastener includes a bolt including a head and a threaded shank having a conic, bare section proximate the head, a threaded section having a plurality of annular ridges and a plurality of spiral grooves in the annular ridges; and a hollow member including a head and a shank. The hollow member is configured to dispose on the bolt with an end of the shank being urged by the conic, bare section. The spiral grooves are spaced apart 90-degree each other.

Abstract: An image sensing device and a control device of an illumination device thereof are provided. The control device includes a control circuit, an operation circuit, and multiple driving signal generators. The control circuit generates multiple control signals. The operation circuit performs a logical operation on the control signals and an image capturing signal to generate multiple operation results. The driving signal generator respectively provides multiple driving signals to the illumination device according to the operation results, and the driving signals respectively have multiple different output powers.