Patents by Inventor PIN-HUI LEE

PIN-HUI LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10685954
    Abstract: A silicon controlled rectifier includes a P-type substrate, an N-type doped well, a first P-type strip-shaped heavily-doped area arranged in the N-type doped well, a first N-type strip-shaped heavily-doped area arranged in the P-type substrate, and at least one N-type heavily-doped area arranged in the P-type substrate and the N-type doped well. The at least one N-type heavily-doped area is not arranged between the first P-type strip-shaped heavily-doped area and the first N-type strip-shaped heavily-doped area, thus the surface area of a semiconductor substrate can be reduced. The conductivity types of the abovementioned components are alternatively changed.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: June 16, 2020
    Assignee: Amazing Microelectronic Corp.
    Inventors: Yu-Shu Shen, Pin-Hui Lee
  • Publication number: 20200168598
    Abstract: A silicon controlled rectifier includes a P-type substrate, an N-type doped well, a first P-type strip-shaped heavily-doped area arranged in the N-type doped well, a first N-type strip-shaped heavily-doped area arranged in the P-type substrate, and at least one N-type heavily-doped area arranged in the P-type substrate and the N-type doped well. The at least one N-type heavily-doped area is not arranged between the first P-type strip-shaped heavily-doped area and the first N-type strip-shaped heavily-doped area, thus the surface area of a semiconductor substrate can be reduced. The conductivity types of the abovementioned components are alternatively changed.
    Type: Application
    Filed: November 28, 2018
    Publication date: May 28, 2020
    Inventors: YU-SHU SHEN, PIN-HUI LEE