Abstract: A manufacturing method of a semiconductor structure is provided. The manufacturing method includes the following steps. A gate structure is formed on a silicon substrate. Doped regions are formed in the silicon substrate on two sides of the gate structure. A dielectric layer is formed on the silicon substrate to cover the gate structure and the doped regions. Holes are formed in the dielectric layer to expose the doped regions, wherein a lower region of each of the holes is located in the doped region. An undoped silicon layer is formed in the lower region of each of the holes, wherein a size of silicon grains of the undoped silicon layer is smaller than that of the silicon substrate. A metal layer is formed on the undoped silicon layer. A heat treatment is performed to transform the metal layer and the undoped silicon layer into a metal silicide layer.

Abstract: A semiconductor structure including a substrate, a first electrode, a first support layer, a high dielectric constant (high-k) dielectric layer, a low dielectric constant (low-k) dielectric layer, and a second electrode is provided. The first electrode is located on the substrate. The first electrode is pillar-shaped. The first support layer is located on the sidewall of the first electrode. The high-k dielectric layer is located on the first electrode and the first support layer. The low-k dielectric layer is located between the first support layer and the high-k dielectric layer and between the first electrode and the high-k dielectric layer. The second electrode is located on the high-k dielectric layer.

Abstract: A semiconductor structure including a substrate and a capacitor is provided. The capacitor is located on the substrate. The capacitor includes a first electrode, a second electrode, a first dielectric layer, and a second dielectric layer. The first electrode is located on the substrate. The first electrode has a first surface and a second surface opposite to each other. The second electrode is located on the first electrode. The first dielectric layer is located between the first surface and the second electrode. The second dielectric layer is located between the first dielectric layer and the second electrode and between the second surface and the second electrode.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a word line structure. The word line structure is disposed in the substrate, and the word line structure includes a conductive stack. The conductive stack includes a first conductive layer and a second conductive layer, wherein the first conductive layer has higher etching resistance than the second conductive layer.

Abstract: A method for manufacturing a memory device is provided. The method includes providing a substrate, forming a dielectric layer on the substrate, and performing a patterning process to form a trench through the dielectric layer to the substrate. The method includes forming a first conductor layer at the bottom of the trench, conformally forming a first barrier layer in the trench, and performing a cleaning process to remove a portion of the first barrier layer on the sidewalls of the dielectric layer, and the first barrier layer is retained on the top surface of the first conductor layer. The method includes forming a second barrier layer over the first barrier layer, and forming a second conductor layer to fill the trench. The forming rate of the second barrier layer on the top surface of the first barrier layer is greater than on the sidewalls of the dielectric layer.

Abstract: A method for forming a semiconductor memory structure includes forming a bottom electrode layer over an active region, depositing a first high-k dielectric material on the bottom electrode layer, depositing a second high-k dielectric material on the first high-k dielectric material, annealing the first and second high-k dielectric materials, after the annealing process, depositing a third high-k dielectric material on the second high-k dielectric material, and forming a top electrode layer on the third high-k dielectric material.

Abstract: An interface control device for controlling communication among a number of USB devices includes a number of USB interfaces, a detection unit, and a USB controller. Each USB interface is configured to couple to one corresponding USB device. The detection unit is electrically coupled to the number of USB interfaces and configured to detect a master-slave relationship of the USB devices. The USB controller is configured to obtain from the detection unit the master-slave relationship of the USB devices and define a type of the USB interfaces coupled to the corresponding USB devices according to the master-slave relationship of the USB devices.

Abstract: A protection circuit is connected between a power supply for providing a working voltage and a load. The protection circuit comprises an interface, a detecting module connected to the interface, a control module, and a switch module. The control module generates a plus width modulation (PWM) signal with a predetermined duty cycle when the interface interconnects with the load. The switch module periodically turns on and turns off based on the PWM signal with the predetermined duty cycle.

Abstract: A window panel for a vehicular electric window includes an inner panel, an outer panel, and a connection panel connected between the inner and outer panels. A space is defined between the inner panel, the outer panel, and the connection panel. Each of the inner panel and the outer panel includes a plurality of vents spaced at regular intervals and intercommunicated with the space. The vents of the inner panel face a panel body of the outer panel surrounding the vents of the outer panel. The vents of the outer panel face a panel body of the inner panel surrounding the vents of the inner panel. By the above structure, when the window panel is mounted to a vehicular electric window, the window panel provides a ventilation effect and a heat dissipating effect to avoid high temperature in the vehicle.

Abstract: A method of manufacturing an inductive module includes: (a) injection molding a plastic material to form a substrate that has opposite first and second surfaces and at least one receiving space indented from the first surface to the second surface; (b) disposing a ferromagnetic core unit in the receiving space; (c) forming conductive traces on the first and second surfaces of the substrate and forming conductive vias through the substrate, each of the conductive traces being electrically connected to a corresponding pair of the conductive vias; and (d) covering the conductive traces with a solder mask such that a part of the conductive traces are exposed to serve as contacts, followed by subjecting to a contact finishing process.

Abstract: A deposition system includes a chamber, an electrical power module, a first detection module and a second detection module. The chamber includes a target, a substrate, and a plasma. The substrate is spaced apart with the target and corresponded to the target. The plasma is generated between the target and the substrate. The target, the substrate and the plasma are in an interior of the chamber. The electrical power module is electrically connected with the target so as to generate a potential difference between the target and the substrate. The first detection module is connected with the interior of the chamber for detecting a composition of the plasma so as to generate a first detection result. The second detection module is connected with the first detection module, and includes an avalanche photodiode detector for analyzing the first detection result so as to generate a second detection result.

Abstract: A hybrid deposition system includes a chamber, a pump, a gas source, a cathodic arc source, a high power impulse magnetron sputtering source and a substrate. The pump is connected with an interior of the chamber for changing a pressure of the interior of the chamber. The gas source is connected with the interior of the chamber for providing a gas into the interior of the chamber. The cathodic arc source is connected with the chamber and includes a first target disposed in the interior of the chamber. The high power impulse magnetron sputtering source is connected with the chamber and includes a second target disposed in the interior of the chamber. The substrate is disposed in the interior of the chamber and corresponded to the first target and the second target.

Abstract: A protection circuit is connected between a power supply for providing a working voltage and a load. The protection circuit comprises an interface, a detecting module connected to the interface, a control module, and a switch module. The control module generates a plus width modulation (PWM) signal with a predetermined duty cycle when the interface interconnects with the load. The switch module periodically turns on and turns off based on the PWM signal with the predetermined duty cycle.

Abstract: A self generating power source includes a housing unit including a housing body, and an energy conversion unit, a rectifying unit and an energy storage unit all disposed inside the housing body. The energy conversion unit includes two first induction members and a second induction member. The first induction members are movable relative to the second induction member for generating an alternating current in the second induction member by virtue of electromagnetic induction. Each first induction member has two magnetic poles opposite to each other in polarity. The first induction members are disposed such that two of the magnetic poles of the first induction members having the same polarity are disposed to confront each other. The rectifying unit is coupled electrically to the second induction member for converting the alternating current into a direct current. The energy storage unit is coupled electrically to the rectifying unit for storing the direct current.

Abstract: A connector module suitable for ultra-high speed network transmission is described. The connector module utilizes a network controlling interface device with substantially the same width as a socket of a jack. Electrical components with smaller size and better network transmission efficiency are disposed on the network controlling interface device. Therefore, the connector module has more compact package size, so as to reduce a package size of an electrical apparatus using the connector module and increase process yield and network transmission efficiency. In addition, at least one displaying device is disposed in the connector module and electrically connected to the network controlling interface device, so as to show a connection status of the network.

Abstract: A cushion comprises a metal plate and a container. The metal plate includes a plurality of positioning members projecting from a periphery thereof. The container includes an upper piece and a lower piece that together define an interior space therebetween. An inlet is defined in the lower piece, allowing filling of liquid into the interior space. The positioning members extend into the interior space of the container and are integrally formed with the container such that the positioning members are fixed to the container.

Abstract: An RJ45 type network socket connector consists of a dielectric housing and a unit body inserted into the housing so as to increase the manufacturing efficiency of the connector. The unit body has a base with a bracket extending horizontally from a front side thereof, a PCB secured on a top of the base, a transformer positioned on the PCB, an inner contact portion arranged on the bracket and an outer contact portion extended through the base. The unit body is easily inserted from a step-shaped entry into a rear space of the housing and the bracket is extended into a receiving groove defined in a socket cavity formed in a front space of the housing and then securely positioned in the housing.

Abstract: A connector assembly consisting of a dielectric housing having at least one socket cavity defined in a front end thereof and a fixing recess defined at one outer side surface of the housing, a PCB securely fixed in the fixing recess by a sealing resin, and at least one indicator fixedly embedded in the sealing resin and secured between an inner side of the PCB and a bottom of the fixing recess, wherein the fixing recess is defined with a front opening at a front end thereof, therefore the at least one indicator emit light from the front opening of the fixing recess.