Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a semiconductor stack including semiconductor layers over a substrate, wherein the semiconductor layers are separated from each other and are stacked up along a direction substantially perpendicular to a top surface of the substrate; an isolation structure around a bottom portion of the semiconductor stack and separating active regions; a metal gate structure over a channel region of the semiconductor stack and wrapping each of the semiconductor layers; a gate spacer over a source/drain (S/D) region of the semiconductor stack and along sidewalls of a top portion of the metal gate structure; and an inner spacer over the S/D region of the semiconductor stack and along sidewalls of lower portions of the metal gate structure and wrapping edge portions of each of the semiconductor layers.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a semiconductor stack including semiconductor layers over a substrate, wherein the semiconductor layers are separated from each other and are stacked up along a direction substantially perpendicular to a top surface of the substrate; an isolation structure around a bottom portion of the semiconductor stack and separating active regions; a metal gate structure over a channel region of the semiconductor stack and wrapping each of the semiconductor layers; a gate spacer over a source/drain (S/D) region of the semiconductor stack and along sidewalls of a top portion of the metal gate structure; and an inner spacer over the S/D region of the semiconductor stack and along sidewalls of lower portions of the metal gate structure and wrapping edge portions of each of the semiconductor layers.

Abstract: A method includes depositing a silicon layer, which includes first portions over a plurality of strips, and second portions filled into trenches between the plurality of strips. The plurality of strips protrudes higher than a base structure. The method further includes performing an anneal to allow parts of the first portions of the silicon layer to migrate toward lower parts of the plurality of trenches, and performing an etching on the silicon layer to remove some portions of the silicon layer.

Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.

Abstract: A method includes depositing a silicon layer, which includes first portions over a plurality of strips, and second portions filled into trenches between the plurality of strips. The plurality of strips protrudes higher than a base structure. The method further includes performing an anneal to allow parts of the first portions of the silicon layer to migrate toward lower parts of the plurality of trenches, and performing an etching on the silicon layer to remove some portions of the silicon layer.

Abstract: A method includes forming a fin extending from a substrate; depositing a liner over a top surface and sidewalls of the fin, where the minimum thickness of the liner is dependent on selected according to a first germanium concentration of the fin; forming a shallow trench isolation (STI) region adjacent the fin; removing a first portion of the liner on sidewalls of the fin, the first portion of the liner being above a topmost surface of the STI region; and forming a gate stack on sidewalls and a top surface of the fin, where the gate stack is in physical contact with the liner.

Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a semiconductor stack including semiconductor layers over a substrate, wherein the semiconductor layers are separated from each other and are stacked up along a direction substantially perpendicular to a top surface of the substrate; an isolation structure around a bottom portion of the semiconductor stack and separating active regions; a metal gate structure over a channel region of the semiconductor stack and wrapping each of the semiconductor layers; a gate spacer over a source/drain (S/D) region of the semiconductor stack and along sidewalls of a top portion of the metal gate structure; and an inner spacer over the S/D region of the semiconductor stack and along sidewalls of lower portions of the metal gate structure and wrapping edge portions of each of the semiconductor layers.

Abstract: A method includes depositing a silicon layer, which includes first portions over a plurality of strips, and second portions filled into trenches between the plurality of strips. The plurality of strips protrudes higher than a base structure. The method further includes performing an anneal to allow parts of the first portions of the silicon layer to migrate toward lower parts of the plurality of trenches, and performing an etching on the silicon layer to remove some portions of the silicon layer.

Abstract: A method includes depositing a silicon layer, which includes first portions over a plurality of strips, and second portions filled into trenches between the plurality of strips. The plurality of strips protrudes higher than a base structure. The method further includes performing an anneal to allow parts of the first portions of the silicon layer to migrate toward lower parts of the plurality of trenches, and performing an etching on the silicon layer to remove some portions of the silicon layer.

Abstract: Methods of rectifying a sidewall profile of a fin-shaped stack structure are provided. An example method includes forming, on a substrate, a first fin-shaped structure and a second fin-shaped structure each including a plurality of channel layers interleaved by a plurality of sacrificial layers; depositing a first silicon liner over the first fin-shaped structure and the second fin-shaped structure; depositing a dielectric layer over the substrate, the first fin-shaped structure and the second fin-shaped structure; etching back the dielectric layer to form an isolation feature between the first fin-shaped structure and the second fin-shaped structure and to remove the first silicon liner over the first fin-shaped structure and the second fin-shaped structure to expose sidewalls of the plurality of channel layers and the plurality of sacrificial layers, and epitaxially depositing a second silicon liner over the exposed sidewalls of the plurality of channel layers and the plurality of sacrificial layers.

Abstract: Methods of rectifying a sidewall profile of a fin-shaped stack structure are provided. An example method includes forming, on a substrate, a first fin-shaped structure and a second fin-shaped structure each including a plurality of channel layers interleaved by a plurality of sacrificial layers; depositing a first silicon liner over the first fin-shaped structure and the second fin-shaped structure; depositing a dielectric layer over the substrate, the first fin-shaped structure and the second fin-shaped structure; etching back the dielectric layer to form an isolation feature between the first fin-shaped structure and the second fin-shaped structure and to remove the first silicon liner over the first fin-shaped structure and the second fin-shaped structure to expose sidewalls of the plurality of channel layers and the plurality of sacrificial layers, and epitaxially depositing a second silicon liner over the exposed sidewalls of the plurality of channel layers and the plurality of sacrificial layers.

Abstract: In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin.

Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.

Abstract: Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-treatment process. In an embodiment, a method includes subjecting a substrate surface having at least one feature to a film deposition process to form a conformal film over a bottom surface and along sidewall surfaces of the feature, subjecting the substrate surface to a treatment process to form respective halogen surface layers or respective halogen-terminated layers on the conformal film formed at respective upper portions of the sidewall surfaces, and performing sequentially and repeatedly the film deposition process and the treatment process to fill the feature with the film.

Abstract: In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin.

Abstract: Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-treatment process. In an embodiment, a method includes subjecting a substrate surface having at least one feature to a film deposition process to form a conformal film over a bottom surface and along sidewall surfaces of the feature, subjecting the substrate surface to a treatment process to form respective halogen surface layers or respective halogen-terminated layers on the conformal film formed at respective upper portions of the sidewall surfaces, and performing sequentially and repeatedly the film deposition process and the treatment process to fill the feature with the film.

Abstract: Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-treatment process. In an embodiment, a method includes subjecting a substrate surface having at least one feature to a film deposition process to form a conformal film over a bottom surface and along sidewall surfaces of the feature, subjecting the substrate surface to a treatment process to form respective halogen surface layers or respective halogen-terminated layers on the conformal film formed at respective upper portions of the sidewall surfaces, and performing sequentially and repeatedly the film deposition process and the treatment process to fill the feature with the film.

Abstract: Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-treatment process. In an embodiment, a method includes subjecting a substrate surface having at least one feature to a film deposition process to form a conformal film over a bottom surface and along sidewall surfaces of the feature, subjecting the substrate surface to a treatment process to form respective halogen surface layers or respective halogen-terminated layers on the conformal film formed at respective upper portions of the sidewall surfaces, and performing sequentially and repeatedly the film deposition process and the treatment process to fill the feature with the film.

Abstract: In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin.