Abstract: A vertical semiconductor charge storage structure includes a substrate, at least one lower electrode, a dielectric layer and an upper electrode. The lower electrode includes a lower conductor, and a first side conductor and a second side conductor connected to the lower conductor. The first side conductor and the second side conductor are parallel to each other and form an included angle with the lower conductor. A height of the first side conductor from the substrate is greater than a height of the second side conductor from the substrate. The dielectric layer and the upper electrode are sequentially formed on surfaces of the substrate and the lower electrode. Accordingly, by forming the first side conductor and the second side conductor at different heights, an aperture ratio is increased to reduce difficulty in filling or deposition in subsequent processes to further enhance an overall yield rate.

Abstract: A vertical semiconductor charge storage structure includes a substrate, at least one lower electrode, a dielectric layer and an upper electrode. The lower electrode includes a lower conductor, and a first side conductor and a second side conductor connected to the lower conductor. The first side conductor and the second side conductor are parallel to each other and form an included angle with the lower conductor. A height of the first side conductor from the substrate is greater than a height of the second side conductor from the substrate. The dielectric layer and the upper electrode are sequentially formed on surfaces of the substrate and the lower electrode. Accordingly, by forming the first side conductor and the second side conductor at different heights, an aperture ratio is increased to reduce difficulty in filling or deposition in subsequent processes to further enhance an overall yield rate.

Abstract: A method of piping defect detection is provided. A semiconductor substrate having an active region and an isolation region is provided, a plurality of semiconductor elements are formed on the semiconductor substrate, a dielectric layer is deposited on the semiconductor substrate and the semiconductor elements, and first and second contact plugs are formed in the dielectric layer to connect the active region and the isolation region respectively. The first contact plug and the second contact plug are illuminated by an electron beam, accumulating charge on the second contact plug, and piping defects are detected between the first contact plug and the second contact plug according to brightness contrast between the first contact plug and the second contact plug.

Abstract: A method of piping defect detection is provided. A semiconductor substrate having an active region and an isolation region is provided, a plurality of semiconductor elements are formed on the semiconductor substrate, a dielectric layer is deposited on the semiconductor substrate and the semiconductor elements, and first and second contact plugs are formed in the dielectric layer to connect the active region and the isolation region respectively. The first contact plug and the second contact plug are illuminated by an electron beam, accumulating charge on the second contact plug, and piping defects are detected between the first contact plug and the second contact plug according to brightness contrast between the first contact plug and the second contact plug.