Patents by Inventor Pin ZHAO

Pin ZHAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240105209
    Abstract: Provided is an apparatus for automatically classifying an input sound source according to a preset criterion and are an apparatus and method for automatically classifying a sound source according to a set criterion by using deep learning. The apparatus for classifying a sound source includes a processor and a memory connected to the processor and storing a deep learning algorithm and original sound data, wherein the memory stores program instructions executable by the processor to generate n pieces of image data corresponding to the original sound data according to a preset method, generate training image data corresponding to the original sound data by using the n pieces of image data, train the deep learning algorithm by using the training image data, and classify target sound data according to a preset criterion by using the deep learning algorithm, wherein the n is a natural number greater than or equal to 2.
    Type: Application
    Filed: November 18, 2021
    Publication date: March 28, 2024
    Applicant: HANYANG S&A CO., LTD.
    Inventors: Jin Yong JEON, Jun Hong PARK, Sang Heon KIM, Hyun LEE, Hyun In JO, Hong Pin ZHAO, Hyun Min KIM
  • Publication number: 20230275128
    Abstract: A semiconductor device including a two-dimensional material and a method of manufacturing the same are provided. The semiconductor device may include a first two-dimensional material layer including a first two-dimensional semiconductor material; a plurality of second two-dimensional material layers connected to the first two-dimensional material layer, each having a thickness greater than that of the first two-dimensional material layer, and including a doped two-dimensional semiconductor material; and a plurality of electrodes on the plurality of second two-dimensional material layers.
    Type: Application
    Filed: January 16, 2023
    Publication date: August 31, 2023
    Applicants: Samsung Electronics Co., Ltd., RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Junyoung KWON, Sangwoo KIM, Kyung-Eun BYUN, Minsu SEOL, Minseok SHIN, Pin ZHAO, Taehyeong KIM, Jaehwan JUNG
  • Publication number: 20220254643
    Abstract: A method of forming a material film includes providing a non-photosensitive mask on a substrate to expose a partial region of the substrate, forming a material film on the partial region of the substrate using a sputtering process, removing the non-photosensitive mask, and heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere. The material film includes a transition metal and a chalcogen element. The sputtering process may include an RF magnetron sputtering process. The heat treatment may be performed at a higher temperature than a temperature of the forming the material film.
    Type: Application
    Filed: December 10, 2021
    Publication date: August 11, 2022
    Applicants: Samsung Electronics Co., Ltd., RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Kyung-Eun BYUN, Sangwoo KIM, Minsu SEOL, Hyeonjin SHIN, Minseok SHIN, Pin ZHAO, Taehyeong KIM, Jaehwan JUNG