Abstract: A glass panel and silicon wafer separation device for photovoltaic module recovery includes a tank body, a supporting plate and at least two floating blocks. The supporting plate is positioned in the tank body. A vertically arranged first cylinder is arranged at a lower end of the tank body. An output end of the first cylinder is fixedly connected to a lower end of the supporting plate. A groove is formed in an upper end of the supporting plate, and the groove is matched with a photovoltaic plate. A heating block is mounted at a lower end of an inner wall of the tank body. The at least two floating blocks are columnar. Lower ends of the at least two floating blocks are fixedly connected to chucks, and the chucks are downwards opened. Fixed pipes are connected between the at least two floating blocks.

Abstract: Provided is an apparatus for automatically classifying an input sound source according to a preset criterion and are an apparatus and method for automatically classifying a sound source according to a set criterion by using deep learning. The apparatus for classifying a sound source includes a processor and a memory connected to the processor and storing a deep learning algorithm and original sound data, wherein the memory stores program instructions executable by the processor to generate n pieces of image data corresponding to the original sound data according to a preset method, generate training image data corresponding to the original sound data by using the n pieces of image data, train the deep learning algorithm by using the training image data, and classify target sound data according to a preset criterion by using the deep learning algorithm, wherein the n is a natural number greater than or equal to 2.

Abstract: Provided are a database processing method and apparatus, and a computer readable storage medium. The database processing method comprises: after a lock wait is generated, writing lock wait related information into a lock wait log.

Abstract: A heating treatment device for photovoltaic module recycling includes a box, a heating rod and a gas pump. A horizontal partition is fixedly arranged inside the box, and the heating rod is located below the partition. The partition is provided with evenly distributed second through slots. An upper end of the partition is provided with evenly distributed shelf boards. The shelf boards are arranged vertically. One side of the shelf board is provided with a groove. The shelf board is further provided with a suction cup. An end surface at an opening of the suction cup is flush with an inner wall of the groove. The movable splitting sheets are arranged in the device. A lower end of the splitting sheet is provided with gas vents, and hot air is discharged through the gas vents. The temperature of the hot air is controlled at 220-240° C.

Abstract: A pyrolysis apparatus for completely separating an EVA crystal silicon wafer from a waste photovoltaic module includes a heating mechanism controlled by a control system and mounted in a pyrolysis box and being capable of performing telescopic motion in a vertical direction; an overturning assembly for fixedly clamping and driving a photovoltaic module to overturn, the overturning assembly is arranged just under the heating mechanism; and a splitting assembly for separating the photovoltaic module, the splitting assembly is arranged at a left side of the photovoltaic module fixedly clamped by the overturning assembly. A splitting apparatus is provided for assisting in splitting EVA, and isolating glass from the crystal silicon wafer, as well as isolating a back plate from the crystal silicon wafer, and therefore, the pressure generated on the crystal silicon wafer due to large strength of the glass and shrinkage of the back plate is prevented.

Abstract: A semiconductor device including a two-dimensional material and a method of manufacturing the same are provided. The semiconductor device may include a first two-dimensional material layer including a first two-dimensional semiconductor material; a plurality of second two-dimensional material layers connected to the first two-dimensional material layer, each having a thickness greater than that of the first two-dimensional material layer, and including a doped two-dimensional semiconductor material; and a plurality of electrodes on the plurality of second two-dimensional material layers.

Abstract: A method of forming a material film includes providing a non-photosensitive mask on a substrate to expose a partial region of the substrate, forming a material film on the partial region of the substrate using a sputtering process, removing the non-photosensitive mask, and heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere. The material film includes a transition metal and a chalcogen element. The sputtering process may include an RF magnetron sputtering process. The heat treatment may be performed at a higher temperature than a temperature of the forming the material film.