Abstract: A method of operating a baseband processing unit for a wake-up receiver. The method includes receiving a signal from a transmitting device that contains a pseudo-random code. The method further includes adding a local pseudo-random code associated with a first correlator of the processing unit with a local pseudo-random code associated with a second correlator of the processing unit to generate a summed local pseudo-random code, and correlating by the first correlator the received pseudo-random code with the summed local pseudo-random code. The method still further includes comparing an output of the first correlator with a predetermined threshold, and determining whether or not to generate a wake-up signal based on the comparison. A baseband processing unit for performing this methodology is also provided.

Abstract: A resistive memory structure comprises a resistive memory element, a resistance block electrically connected to the memory element through an electrical node, and an interpretation circuit electrically connected to the node and configured to interpret a voltage at the node and to indicate a resistive state of the memory element based on the voltage at the node. The interpretation circuit includes one or more active devices, one or more passive devices each electrically connected to a respective one of the active devices, and one or more comparators each electrically connected to a respective one of the active devices. Each of the active devices and the passive device electrically connected thereto are configured to provide a voltage level to the respective comparator to which the active device is connected. The comparator(s) are configured to indicate the resistive state of the memory element based on the provided voltage level(s).

Abstract: A resistive memory structure comprises at least one resistive memory element configured to store one or more bits of data and a circuit electrically connected to the resistive memory element for use in performing at least one of a read or write operation on the at least one resistive memory element. The circuit includes a resistor electrically connected in series to the resistive memory element thereby forming a voltage divider and electrical node therebetween, and an interpretation circuit electrically connected to the electrical node formed between the resistive memory element and the resistor. The interpretation circuit is configured to interpret a voltage at the electrical node and to determine a resistive state of the resistive memory element based on the voltage at the electrical node.

Abstract: A method of operating a baseband processing unit for a wake-up receiver. The method includes receiving a signal from a transmitting device that contains a pseudo-random code. The method further includes adding a local pseudo--random code associated with a first correlator of the processing unit with a local pseudo-random code associated with a second correlator of the processing unit to generate a summed local pseudo-random code, and correlating by the first correlator the received pseudo-random code with the summed local pseudo-random code. The method still further includes comparing an output of the first correlator with a predetermined threshold, and determining whether or not to generate a wake-up signal based on the comparison. A baseband processing unit for performing this methodology is also provided.

Abstract: A resistive memory structure comprises a resistive memory element, a resistance block electrically connected to the memory element through an electrical node, and an interpretation circuit electrically connected to the node and configured to interpret a voltage at the node and to indicate a resistive state of the memory element based on the voltage at the node. The interpretation circuit includes one or more active devices, one or more passive devices each electrically connected to a respective one of the active devices, and one or more comparators each electrically connected to a respective one of the active devices. Each of the active devices and the passive device electrically connected thereto are configured to provide a voltage level to the respective comparator to which the active device is connected. The comparator(s) are configured to indicate the resistive state of the memory element based on the provided voltage level(s).

Abstract: A static random access memory (SRAM) cell is provided with improved write margin. The SRAM cell includes: a pair of inverters cross coupled to each other and forming two storage nodes; read access switches electrically coupled between a read bit line and the two storage nodes; write access switches electrically coupled between write bit lines and two storage nodes; and supply switches electrically coupled between a supply voltage and the pair of inverters and operable, in response to a signal on at least one of the write bit lines, to selectively connect the supply voltage to at least one of the inverters in the pair of inverters. During a write operation, the supply switches operate to cut off the supply voltage to the inverter in the pair of inverters having a charged state.

Abstract: A Mach-Zehnder interferometer (MZI) structure based on a doubly-corrugated spoofed surface plasmon polariton (DC-SSPP) waveguide is presented. The dependence of phase change on the dielectric loading of the DC-SSPP structure causes the output from both arms to interfere and enhance features on the transmission spectrum of the MZI. The proposed MZI structure can be used for tag-free bio-molecular sensing. The highly localized electro-magnetic field at frequencies close to SSPP resonance is shown to reduce the sample amount needed to produce interference patterns without affecting the selectivity of the sensing structure.

Abstract: A sensor platform is provided for interrogating a sample with an electromagnetic (EM) wave. The platform includes: a dielectric material having opposing first and second planar surfaces; a first array of loop elements embedded in the first planar surface of the dielectric material, wherein slots are formed between the loop elements in the first array of loop elements and configured to host a sample material therein; and a second array of loop elements embedded in the second planar surface of the dielectric material and formed symmetrically with respect to the first array of loop elements, wherein slots are also formed between the loop elements of the second array of loop elements. The loop elements in the first array and the second array are comprised of a conductive material.

Abstract: A static random access memory (SRAM) cell is provided with improved write margin. The SRAM cell includes: a pair of inverters cross coupled to each other and forming two storage nodes; read access switches electrically coupled between a read bit line and the two storage nodes; write access switches electrically coupled between write bit lines and two storage nodes; and supply switches electrically coupled between a supply voltage and the pair of inverters and operable, in response to a signal on at least one of the write bit lines, to selectively connect the supply voltage to at least one of the inverters in the pair of inverters. During a write operation, the supply switches operate to cut off the supply voltage to the inverter in the pair of inverters having a charged state.

Abstract: A high-speed terahertz analog-to-digital converter (ADC) is provided. The ADC is comprised of an interferometer, a modulator and an array of detectors. The interferometer is configured to receive a carrier signal and guide a spoofed surface plasmon polariton (SSPP) wave in each of its two arms. The SSPP waves are emitted from the free end of each arm into a propagation space and combined in the space to form an interference wave. The modulator modulates the carrier signal in at least one of two arms with a modulating signal, where the radiation pattern of the interference wave in a far field of the propagation space is shifted in accordance with the amplitude of the modulating signal. The array of detectors are spatially separated from the interferometer by the propagation space and arranged to receive the interference wave.

Abstract: A sensor platform is provided for interrogating a sample with an electromagnetic (EM) wave. The platform includes: a dielectric material having opposing first and second planar surfaces; a first array of loop elements embedded in the first planar surface of the dielectric material, wherein slots are formed between the loop elements in the first array of loop elements and configured to host a sample material therein; and a second array of loop elements embedded in the second planar surface of the dielectric material and formed symmetrically with respect to the first array of loop elements, wherein slots are also formed between the loop elements of the second array of loop elements. The loop elements in the first array and the second array are comprised of a conductive material.

Abstract: A Mach-Zehnder interferometer (MZI) structure based on a doubly-corrugated spoofed surface plasmon polariton (DC-SSPP) waveguide is presented. The dependence of phase change on the dielectric loading of the DC-SSPP structure causes the output from both arms to interfere and enhance features on the transmission spectrum of the MZI. The proposed MZI structure can be used for tag-free bio-molecular sensing. The highly localized electro-magnetic field at frequencies close to SSPP resonance is shown to reduce the sample amount needed to produce interference patterns without affecting the selectivity of the sensing structure.

Abstract: A resistive memory structure comprises at least one resistive memory element configured to store one or more bits of data and a circuit electrically connected to the resistive memory element for use in performing at least one of a read or write operation on the at least one resistive memory element. The circuit includes a resistor electrically connected in series to the resistive memory element thereby forming a voltage divider and electrical node therebetween, and an interpretation circuit electrically connected to the electrical node formed between the resistive memory element and the resistor. The interpretation circuit is configured to interpret a voltage at the electrical node and to determine a resistive state of the resistive memory element based on the voltage at the electrical node.

Abstract: A high-speed terahertz analog-to-digital converter (ADC) is provided. The ADC is comprised of an interferometer, a modulator and an array of detectors. The interferometer is configured to receive a carrier signal and guide a spoofed surface plasmon polariton (SSPP) wave in each of its two arms. The SSPP waves are emitted from the free end of each arm into a propagation space and combined in the space to form an interference wave. The modulator modulates the carrier signal in at least one of two arms with a modulating signal, where the radiation pattern of the interference wave in a far field of the propagation space is shifted in accordance with the amplitude of the modulating signal. The array of detectors are spatially separated from the interferometer by the propagation space and arranged to receive the interference wave.

Abstract: An adaptive reading and programming method is presented for resistive memory. The core operating principle is to cause a change in the conductance of a resistive memory cell and measure the magnitude of the change. The magnitude of change can be used to determine the logic state of the resistive memory cell. The proposed methods are evaluated in simulation programs with integrated circuit emphasis and a hand analysis model is extracted to help explain the sources of power and energy consumption.

Abstract: A terahertz (THz) switch consisting of perfect conductor metamaterials is discussed in this invention. Specifically, we have built a THz logic block by combining two double-sided corrugated waveguides capable of slowing down the electromagnetic waves in the THz regime with a sub-wavelength cavity, having one or more grooves with shorter height than the grooves of the periodic corrugated waveguide. This new type of THz structure is called as the waveguide-cavity-waveguide (WCW). The new invention is based on our mathematical modeling and experimentation that confirms a strong electromagnetic field accumulation inside the tiny cavity which can confine EM field for a long time within a very small effective volume (Veff) to provide high quality (Q) factor. Therefore, an efficient THz switch can be designed to achieve ON-OFF switching functionality by modulating the refractive index n or extinction coefficient ? inside the switching junction.

Abstract: A subwavelength terahertz switch using an artificially designed conductor metamaterial is discussed in this invention. Slow-light EM Wave propagating at THZ speed imitates the strongly localized surface plasmon modes and henceforth is called Spoof Surface Plasmon Polariton (SSPP) in this invention. The SSPP mode of slow-light EM propagation can be easily tailored by changing the refractive index of the dielectric materials inside the metallic gap structure engineered as a periodic array of grooves. Thus, the incorporation of electro-optical material which has birefringence such as a nematic liquid crystal (N-LC) or multiple refractive indices into the metallic gap leads to a highly compact and efficient terahertz switch being controlled by a low voltage signal. The THZ dynamic switches can be used to construct linear switches, Y junction switches and Mach Zehnder interferometers.

Abstract: An adaptive reading and programming method is presented for resistive memory. The core operating principle is to cause a change in the conductance of a resistive memory cell and measure the magnitude of the change. The magnitude of change can be used to determine the logic state of the resistive memory cell. The proposed methods are evaluated in simulation programs with integrated circuit emphasis and a hand analysis model is extracted to help explain the sources of power and energy consumption.

Abstract: A terahertz (THz) switch consisting of perfect conductor metamaterials is discussed in this invention. Specifically, we have built a THz logic block by combining two double-sided corrugated waveguides capable of slowing down the electromagnetic waves in the THz regime with a sub-wavelength cavity, having one or more grooves with shorter height than the grooves of the periodic corrugated waveguide. This new type of THz structure is called as the waveguide-cavity-waveguide (WCW). The new invention is based on our mathematical modeling and experimentation that confirms a strong electromagnetic field accumulation inside the tiny cavity which can confine EM field for a long time within a very small effective volume (Veff) to provide high quality (Q) factor. Therefore, an efficient THz switch can be designed to achieve ON-OFF switching functionality by modulating the refractive index n or extinction coefficient ? inside the switching junction.

Abstract: A subwavelength terahertz (THz) switch using an artificially designed conductor metamaterial is discussed in this invention. Theoretically, slow-light EM wave propagating at THz speed imitates the strongly localized surface plasmon modes and henceforth is called Spoof Surface Plasmon Polariton (SSPP) mode in this invention. The SSPP mode of slow-light EM propagation can be easily tailored by changing the refractive index of the dielectric materials inside the metallic gap structure engineered as a periodic array of grooves. Thus, the incorporation of electro-optical material which has birefringence such as a nematic liquid crystal (N-LC) or multiple-refractive indices into the metallic gap leads to a highly compact and efficient terahertz switch being controlled by a low-voltage signal.