Abstract: A harmonic densely connecting method includes an input step, a plurality of layer operation steps and an output step. The input step is for storing an original input tensor of the block into a memory. Each of the layer operation steps includes a layer-input tensor concatenating step and a convolution operation step. The layer-input tensor concatenating step is for selecting at least one layer-input element tensor of a layer-input set from the memory according to an input connection rule. When a number of the at least one layer-input element tensor is greater than 1, concatenating all of the layer-input element tensors and producing a layer-input tensor. The convolution operation step is for calculating a convolution operation to produce at least one result tensor and then storing the at least one result tensor into the memory. The output step is for outputting a block output.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device comprises a substrate, a plurality of fin structures and a gate structure. The fin structures are disposed on the substrate. The gate structure is formed on the fin structures and is substantially perpendicular to the fin structures. Each of the fin structures includes a first source/drain region and a second source/drain region, and the gate structure is located between the first source/drain region and the second source/drain region, and at least one of the fin structures is electrically floated between the first source/drain region and the second source/drain region.

Abstract: A differential amplifier is provided. The differential amplifier includes a first load, a second load, a current source, a differential pair circuit, a first and a second switch circuit. The differential pair circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor. The first switch circuit controls the first and the second transistors, and the second switch circuit controls the third and the fourth transistors. Through the control and selection of the first and second switch circuits, a differential pair is selected in the differential pair circuit to receive and process a first input signal and a second input signal for signal.

Abstract: A method includes generating light pulses by an illumination source toward an object; collecting the light pulses reflected from the object by an image sensor; generating a first signal-time plot of a sensor signal by the image sensor; generating a second signal-time plot of an index signal, wherein the second signal-time plot of the index signal comprises pulsed signals corresponding to the light pulses, respectively; collecting data from selected time periods of the first signal-time plot of the sensor signal, wherein the selected time periods of the first signal-time plot of the sensor signal are the same as time periods of the light pulses in the second signal-time plot of the index signal; and generating a third signal-time plot of an output signal based on the collected data.

Abstract: A method includes: receiving a composite substrate including a first region and a second region, the composite substrate including a semiconductor substrate and an insulator layer over the semiconductor substrate; forming a trench through the insulator layer, the trench exposing a surface of the semiconductor substrate in the first region; growing an initial epitaxial layer in the trench and over an upper surface of the second region; thickening the initial epitaxial layer to form an epitaxial layer; forming a transistor layer over the epitaxial layer, the transistor layer including a first transistor and a second transistor in the first region and the second region, respectively; and forming an interconnect layer over the transistor layer and electrically coupling the first transistor to the second transistor.

Abstract: Methods are provided herein for determining and administering optimized dosing of therapeutic anti-CD47 agents, in a schedule that provides safe escalation of dose while achieving a therapeutic level in a clinically effective period of time. The methods can comprise the steps of clearance, escalation, and maintenance. In one embodiment the dosing regimen administers an initial (i) sub-therapeutic dose of an anti-CD47 agent or (ii) a cytoreductive therapy to achieve a safe level of circulating tumor cells for subsequent treatment (clearance); escalating the dose of an anti-CD47 agent until a therapeutic dose is reached (escalation); and maintaining the therapeutic dose for a period of time sufficient to reduce tumor cells in the bone marrow of the patient (maintenance). In an alternative dosing regimen, a patient determined to have a safe level of circulating tumor cells at presentation is treated by the steps of escalation and maintenance without initial clearance.

Abstract: A container for receiving a semiconductor device is provided. In one embodiment, the wafer holder assembly includes a first wafer holder with a plurality of first fingers arranged in a first common horizontal plane and a second wafer holder with a plurality of second fingers arranged in a second common horizontal plane. The first wafer holder and the second holder are configured to move relative to each other in a vertical direction, and the first wafer holder and the second holder are configured to rotate relative to each other around a vertical axis.

Abstract: A method includes: receiving a composite substrate including a first region and a second region, the composite substrate comprising a semiconductor substrate and an insulator layer over the semiconductor substrate; bonding a silicon layer to the composite substrate; depositing a capping layer over the silicon layer; forming a trench through the capping layer, the silicon layer and the insulator layer, the trench exposing a surface of the semiconductor substrate in the first region; growing an initial epitaxial layer in the trench; removing the capping layer to form an epitaxial layer from the silicon layer and the initial epitaxial layer; forming a transistor layer over the epitaxial layer, the transistor layer including a first transistor and a second transistor in the first region and the second region, respectively; and forming an interconnect layer over the transistor layer and electrically coupling the first transistor to the second transistor.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a polysilicon layer arranged on an upper surface of a base substrate. A dielectric layer is arranged over the polysilicon layer, and an active semiconductor layer is arranged over the dielectric layer. A semiconductor material is arranged vertically on the upper surface of the base substrate and laterally beside the active semiconductor layer.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an epitaxial layer arranged on a semiconductor body. A trap-rich layer is arranged on the epitaxial layer, a dielectric layer is arranged on the trap-rich layer, and an active semiconductor layer is arranged on the dielectric layer. A semiconductor material is arranged on the epitaxial layer and laterally beside the active semiconductor layer. The epitaxial layer continuously extends from directly below the trap-rich layer to directly below the semiconductor material.

Abstract: The subject invention is a method of inputting a character and associated computer program product, cloud system, and electronic device, and a method of indexing a character. The method of inputting a character includes: receiving a command which indicates an element; receiving a command to select one of a plurality of features which classify a group of roots associated with the element; displaying a form list in response to the command; and receiving a command to select a form in the form list to complete an input of a character.

Abstract: A method of a sensing device, comprising steps of emitting, by a light source of the sensing device, a light pulse in each of n cycles; measuring, by a single photon avalanche diodes array of the sensing device, a time-of-flight value with a resolution of m in each of the n cycles to generate n raw data frames based on a reflected light of the light pulse; performing, by a pre-processing circuit of the sensing device, a pre-processing operation to n raw data frames to generate k pre-processed data frames, wherein m, n and k are natural numbers, and k is smaller than n; and generating, by post-processor of the sensing device, a histogram according to the k pre-processed data frames and analyzing the histogram to output a depth result.

Abstract: Methods, kits, and compositions are provided herein that can be used to treat CD20+ cancer using an anti-CD47 agent such as an antibody. The anti-CD47 agent can be used alone or in combination with one or more additional agent such as an anti-CD20 antibody.

Abstract: Methods, kits, and compositions are provided herein that can be used to treat ovarian cancer using an anti-CD47 antibody. The anti-CD47 antibody can be used alone or in combination with one or more additional agent such as chemotherapy.

Abstract: Methods, kits, and compositions are provided herein that can be used to treat hematopoietic disorders using an anti-CD47 agent such as an antibody and a hypomethylating agent, such as azacitidine.

Abstract: Methods, kits, and compositions are provided herein that can be used to treat CD20+ cancer using an anti-CD47 agent such as an antibody. The anti-CD47 agent can be used alone or in combination with one or more additional agent such as an anti-CD20 antibody.

Abstract: A method for testing semiconductor devices is disclosed, which includes: obtaining a result measured on a semiconductor device in one of a set of tests; comparing the result with a maximum value determined among respective results that were previously measured in one or more of the set of tests and a minimum value determined among respective results that were previously measured in one or more of the set of tests; determining, based on the comparison between the first result and the maximum and minimum values, whether to update the maximum and minimum values to calculate a delta value; comparing the delta value with a noise threshold value; determining based on the comparison between the delta value and the noise threshold value, whether to update a value of a timer; determining that the value of the timer satisfies a timer threshold; and determining that the semiconductor device incurs noise.

Abstract: Methods, kits, and compositions are provided herein that can be used to treat ovarian cancer using an anti-CD47 antibody. The anti-CD47 antibody can be used alone or in combination with one or more additional agent such as chemotherapy.

Abstract: Methods, kits, and compositions are provided herein that can be used to treat hematopoietic disorders using an anti-CD47 agent such as an antibody and a hypomethylating agent, such as azacitidine.

Abstract: A feature map caching method of a convolutional neural network includes a connection analyzing step and a plurality of layer operation steps. The connection analyzing step is for analyzing a network to establish a convolutional neural network connection list. The convolutional neural network connection list includes a plurality of tensors and a plurality of layer operation coefficients. Each of the layer operation coefficients includes a step index, at least one input operand label and an output operand label. The step index as a processing order for the layer operation step. At least one of the layer operation steps is for flushing at least one of the tensors in a cache according to a distance between the at least one of the layer operation steps and a future layer operation step of the layer operation steps. The distance is calculated according to the convolutional neural network connection list.