Patents by Inventor Ping-Cheng Chiu

Ping-Cheng Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Preventing computer worms from attacking a private computer network through a virtual private network connection
    Patent number: 9225733
    Abstract: A system for preventing a computer worm from attacking a private computer network through a virtual private network (VPN) connection includes a client computer and a VPN server. The client computer detects connection attempts to the VPN server. The client computer consults application rules to determine whether an application program running in the client computer and connecting to the VPN server is specifically authorized to connect to the VPN server. The client computer can receive the application rule automatically from the VPN server or manually from a user.
    Type: Grant
    Filed: August 25, 2014
    Date of Patent: December 29, 2015
    Assignee: Trend Micro Incorporated
    Inventors: Chien-Wei Hung, Chih-Ko Chung, Ping-Cheng Chiu
  • METHODS OF FORMING HYDROPHOBIC SILICON DIOXIDE LAYER AND FORMING ORGANIC THIN FILM TRANSISTOR
    Publication number: 20120135562
    Abstract: A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapour deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.
    Type: Application
    Filed: January 14, 2011
    Publication date: May 31, 2012
    Applicant: National Taiwan University of Science and Technology
    Inventors: Ching-Lin Fan, Ping-Cheng Chiu, Chang-Chih Lin
  • Methods of forming hydrophobic silicon dioxide layer and forming organic thin film transistor
    Patent number: 8178447
    Abstract: A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapor deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: May 15, 2012
    Assignee: National Taiwan University of Science and Technology
    Inventors: Ching-Lin Fan, Ping-Cheng Chiu, Chang-Chih Lin