Patents by Inventor Ping-Cheng KO

Ping-Cheng KO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240087932
    Abstract: An apparatus having a first portion including a first front wall, a first rear wall, and a bottom wall integrally coupled to the first front wall and the first rear wall, and pivotal pin structures integrally coupled to and extending from the first rear wall. The apparatus includes a second portion having a second front wall, a second rear wall, and a top wall integrally coupled to the second front wall and the second rear wall, and pin holders integrally coupled to and extending from the second rear wall and at an offset angle with reference to the top wall. The pivotal pin structure includes a base support connected to the first rear wall and a shaft connected to the base support, and the pin holder defines an opening sized and shaped to accept the shaft. The first and second portions are sized and shaped to be pivotally movable between open and closed configurations.
    Type: Application
    Filed: November 20, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzu-Chung TSAI, Ping-Cheng KO, Fang-yu LIU, Jhih-Yuan YANG
  • Publication number: 20240087945
    Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Inventors: Tsai-Hao HUNG, Ping-Cheng KO, Tzu-Yang LIN, Fang-Yu LIU, Cheng-Han WU
  • Patent number: 11881421
    Abstract: An apparatus having a first portion including a first front wall, a first rear wall, and a bottom wall integrally coupled to the first front wall and the first rear wall, and pivotal pin structures integrally coupled to and extending from the first rear wall. The apparatus includes a second portion having a second front wall, a second rear wall, and a top wall integrally coupled to the second front wall and the second rear wall, and pin holders integrally coupled to and extending from the second rear wall and at an offset angle with reference to the top wall. The pivotal pin structure includes a base support connected to the first rear wall and a shaft connected to the base support, and the pin holder defines an opening sized and shaped to accept the shaft. The first and second portions are sized and shaped to be pivotally movable between open and closed configurations.
    Type: Grant
    Filed: March 29, 2021
    Date of Patent: January 23, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzu-Chung Tsai, Ping-Cheng Ko, Fang-yu Liu, Jhih-Yuan Yang
  • Patent number: 11854860
    Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
    Type: Grant
    Filed: November 15, 2022
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsai-Hao Hung, Ping-Cheng Ko, Tzu-Yang Lin, Fang-Yu Liu, Cheng-Han Wu
  • Publication number: 20230077331
    Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
    Type: Application
    Filed: November 15, 2022
    Publication date: March 16, 2023
    Inventors: Tsai-Hao HUNG, Ping-Cheng KO, Tzu-Yang LIN, Fang-Yu LIU, Cheng-Han WU
  • Patent number: 11532499
    Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
    Type: Grant
    Filed: February 23, 2021
    Date of Patent: December 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsai-Hao Hung, Ping-Cheng Ko, Tzu-Yang Lin, Fang-Yu Liu, Cheng-Han Wu
  • Patent number: 11195737
    Abstract: An apparatus for storing and transporting semiconductor elements includes a first portion and a second portion. The first portion includes a first front side wall, a first rear side wall, a top wall, and at least one pin holder integrally extending from the first rear side wall. The second portion includes a second front side wall, a second rear side wall, a bottom wall, and at least one pivotal pin structure integrally coupled with and extending from the second rear side wall. The at least one pivotal pin structure comprises a shaft, and a head connected with the shaft. The at least one pin holder defines a cavity sized and shaped to accept the head of the at least one pivotal pin structure. The first portion and the second portion are pivotally movable between an open configuration and a closed container configuration.
    Type: Grant
    Filed: September 20, 2019
    Date of Patent: December 7, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Sung Kuo, Jhih-Yuan Yang, Po-Wei Chen, Fang-yu Liu, Ping-Cheng Ko, Chung-Cheng Chen
  • Publication number: 20210217642
    Abstract: An apparatus having a first portion including a first front wall, a first rear wall, and a bottom wall integrally coupled to the first front wall and the first rear wall, and pivotal pin structures integrally coupled to and extending from the first rear wall. The apparatus includes a second portion having a second front wall, a second rear wall, and a top wall integrally coupled to the second front wall and the second rear wall, and pin holders integrally coupled to and extending from the second rear wall and at an offset angle with reference to the top wall. The pivotal pin structure includes a base support connected to the first rear wall and a shaft connected to the base support, and the pin holder defines an opening sized and shaped to accept the shaft. The first and second portions are sized and shaped to be pivotally movable between open and closed configurations.
    Type: Application
    Filed: March 29, 2021
    Publication date: July 15, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzu-Chung TSAI, Ping-Cheng KO, Fang-yu LIU, Jhih-Yuan YANG
  • Publication number: 20210202297
    Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
    Type: Application
    Filed: February 23, 2021
    Publication date: July 1, 2021
    Inventors: Tsai-Hao HUNG, Ping-Cheng KO, Tzu-Yang LIN, Fang-Yu LIU, Cheng-Han WU
  • Patent number: 10964569
    Abstract: An apparatus having a first portion including a first front wall, a first rear wall, and a bottom wall integrally coupled to the first front wall and the first rear wall, and pivotal pin structures integrally coupled to and extending from the first rear wall. The apparatus includes a second portion having a second front wall, a second rear wall, and a top wall integrally coupled to the second front wall and the second rear wall, and pin holders integrally coupled to and extending from the second rear wall and at an offset angle with reference to the top wall. The pivotal pin structure includes a base support connected to the first rear wall and a shaft connected to the base support, and the pin holder defines an opening sized and shaped to accept the shaft. The first and second portions are sized and shaped to be pivotally movable between open and closed configurations.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: March 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ping-Cheng Ko, Tzu-Chong Tsai, Jhih-Yuan Yang, Fang-yu Liu
  • Patent number: 10950485
    Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: March 16, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsai-Hao Hung, Ping-Cheng Ko, Tzu-Yang Lin, Fang-Yu Liu, Cheng-Han Wu
  • Publication number: 20200335386
    Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
    Type: Application
    Filed: September 3, 2019
    Publication date: October 22, 2020
    Inventors: Tsai-Hao HUNG, Ping-Cheng KO, Tzu-Yang LIN, Fang-Yu LIU, Cheng-Han WU
  • Publication number: 20200006105
    Abstract: An apparatus having a first portion including first front wall, first rear wall, and bottom wall integrally coupled to the first front wall and the first rear wall, and pivotal pin structures integrally coupled to and extending from the first rear wall. The apparatus includes a second portion having second front wall, second rear wall, and top wall integrally coupled to the second front wall and the second rear wall, and pin holders integrally coupled to and extending from the second rear wall and at an offset angle with reference to the top wall. The pivotal pin structure includes a base support connected to the first rear wall and a shaft connected to the base support, and the pin holder defines an opening sized and shaped to accept the shaft. The first and second portions are sized and shaped to be pivotally movable between an open and closed configurations.
    Type: Application
    Filed: June 21, 2019
    Publication date: January 2, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ping-Cheng KO, Tzu-Chong TSAI, Jhih-Yuan YANG, Fang-yu LIU