Patents by Inventor Ping-Chih OU

Ping-Chih OU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11961707
    Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
    Type: Grant
    Filed: December 12, 2022
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsing-Piao Hsu, Nai-Han Cheng, Ping-Chih Ou
  • Publication number: 20230113582
    Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
    Type: Application
    Filed: December 12, 2022
    Publication date: April 13, 2023
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsing-Piao HSU, Nai-Han Cheng, Ping-Chih Ou
  • Patent number: 11527382
    Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
    Type: Grant
    Filed: June 23, 2021
    Date of Patent: December 13, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsing-Piao Hsu, Nai-Han Cheng, Ping-Chih Ou
  • Publication number: 20210319978
    Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
    Type: Application
    Filed: June 23, 2021
    Publication date: October 14, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsing-Piao Hsu, Nai-Han Cheng, Ping-Chih Ou
  • Patent number: 11081315
    Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: August 3, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsing-Piao Hsu, Nai-Han Cheng, Ping-Chih Ou
  • Publication number: 20200395193
    Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can he delivered to, for example, an ion source head of the ion implantation tool.
    Type: Application
    Filed: June 14, 2019
    Publication date: December 17, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsing-Piao HSU, Nai-Han CHENG, Ping-Chih OU