Patents by Inventor Ping-Ching Jiang

Ping-Ching Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220356594
    Abstract: A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 10, 2022
    Inventors: Che-Min LIN, Hung-San Lu, Chao-Lung Chen, Chao Yuan Chang, Chun-An Kung, Chin-Hsin Hsiao, Wen-Chun Hou, Szu-Hung Yang, Ping-Ching Jiang
  • Patent number: 11401624
    Abstract: A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.
    Type: Grant
    Filed: July 22, 2020
    Date of Patent: August 2, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Che-Min Lin, Hung-San Lu, Chao-Lung Chen, Chao Yuan Chang, Chun-An Kung, Chin-Hsin Hsiao, Wen-Chun Hou, Szu-Hung Yang, Ping-Ching Jiang
  • Publication number: 20220025540
    Abstract: A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.
    Type: Application
    Filed: July 22, 2020
    Publication date: January 27, 2022
    Inventors: Che-Min Lin, Hung-San Lu, Chao-Lung Chen, Chao Yuan Chang, Chun-An Kung, Chin-Hsin Hsiao, Wen-Chun Hou, Szu-Hung Yang, Ping-Ching Jiang