Patents by Inventor Ping Cing SHEN

Ping Cing SHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic device package and method of manufacturing the same
    Patent number: 11699654
    Abstract: An electronic device package includes an encapsulated electronic component, a redistribution layer (RDL) and a conductive via. The RDL is disposed above the encapsulated electronic component. The RDL includes a circuit layer comprising a conductive pad including a pad portion having a curved edge and a center of curvature, and an extension portion protruding from the pad portion and having a curved edge and a center of curvature. The circuit layer further includes a dielectric layer above the RDL. The conductive via is disposed in the dielectric layer and connected to the conductive pad of the RDL. A center of the conductive via is closer to the center of curvature of the edge of the extension portion than to the center of curvature of the edge of the pad portion.
    Type: Grant
    Filed: April 28, 2021
    Date of Patent: July 11, 2023
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Shao-An Chen, Chih-Yi Huang, Ping Cing Shen
  • ELECTRONIC DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20220352066
    Abstract: An electronic device package includes an encapsulated electronic component, a redistribution layer (RDL) and a conductive via. The RDL is disposed above the encapsulated electronic component. The RDL includes a circuit layer comprising a conductive pad including a pad portion having a curved edge and a center of curvature, and an extension portion protruding from the pad portion and having a curved edge and a center of curvature. The circuit layer further includes a dielectric layer above the RDL. The conductive via is disposed in the dielectric layer and connected to the conductive pad of the RDL. A center of the conductive via is closer to the center of curvature of the edge of the extension portion than to the center of curvature of the edge of the pad portion.
    Type: Application
    Filed: April 28, 2021
    Publication date: November 3, 2022
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Shao-An CHEN, Chih-Yi HUANG, Ping Cing SHEN