Abstract: A device includes a sensor configured to provide a temperature-sensitive voltage and an oscillator. The sensor includes: a first transistor, being a diode-connected transistor; a second transistor coupled between a source of the first transistor and ground, wherein a gate of the second transistor is controllable by an enable signal; and a current source configured to control the first transistor and comprising a third transistor, a drain of which is directly connected to a drain of the first transistor, the third transistor being a diode-connected transistor. The oscillator includes: a digital delay cell; and an adjustment device configured to, based on the temperature-sensitive voltage, adjust a delay of the digital delay cell. The digital delay cell produces, based on the adjusted delay, a signal at an oscillation frequency.

Abstract: A device includes a sensor configured to provide a temperature-sensitive voltage and an oscillator. The sensor includes: a first transistor, being a diode-connected transistor; a second transistor coupled between a source of the first transistor and ground, wherein a gate of the second transistor is controllable by an enable signal; and a current source configured to control the first transistor and comprising a third transistor, a drain of which is directly connected to a drain of the first transistor, the third transistor being a diode-connected transistor. The oscillator includes: a digital delay cell; and an adjustment device configured to, based on the temperature-sensitive voltage, adjust a delay of the digital delay cell. The digital delay cell produces, based on the adjusted delay, a signal at an oscillation frequency.

Abstract: A device includes a sensor and an oscillator. The sensor provides a temperature-sensitive voltage. The oscillator includes a digital delay cell and an adjustment device. The adjustment device, based on the temperature-sensitive voltage, adjusts a delay of the digital delay cell, wherein the digital delay cell produces, based on the adjusted delay, a signal at an oscillation frequency.

Abstract: An integrated circuit includes a circuit unit and an oscillating signal-generating assembly. The circuit unit includes a plurality of first cells. The oscillating signal-generating assembly is configured to generate different oscillating signals and includes a ring oscillator, a signal line, and a switching unit. The ring oscillator includes a plurality of second cells, each of which has an output terminal. The second cells are of the same type as the first cells. The signal line is configured to receive the different oscillating signals. The switching unit is coupled between the ring oscillator and the signal line and is configured to selectively couple the output terminals of the second cells to the signal line. A timing characteristic of a cell of the same type as the first cells can be estimated from the different oscillating signals.

Abstract: A device includes a sensor and an oscillator. The sensor provides a temperature-sensitive voltage. The oscillator includes a digital delay cell and an adjustment device. The adjustment device, based on the temperature-sensitive voltage, adjusts a delay of the digital delay cell, wherein the digital delay cell produces, based on the adjusted delay, a signal at an oscillation frequency.

Abstract: An integrated circuit includes a circuit unit and an oscillating signal-generating assembly. The circuit unit includes a plurality of first cells. The oscillating signal-generating assembly is configured to generate different oscillating signals and includes a ring oscillator, a signal line, and a switching unit. The ring oscillator includes a plurality of second cells, each of which has an output terminal. The second cells are of the same type as the first cells. The signal line is configured to receive the different oscillating signals. The switching unit is coupled between the ring oscillator and the signal line and is configured to selectively couple the output terminals of the second cells to the signal line. A timing characteristic of a cell of the same type as the first cells can be estimated from the different oscillating signals.

Abstract: A semiconductor arrangement and methods of forming the same are described. A semiconductor arrangement includes a first tier including a first capacitor, a second tier over the first tier, the second tier including a second capacitor, and a first substrate between the first tier and the second tier. The first capacitor is connected to the second capacitor through the substrate. A plurality of tiers are contemplated, such that a total capacitance of the semiconductor arrangement increases based upon interconnection of metal layers of different tiers. Additionally, the semiconductor arrangement has a greater area efficiency as compared to multiple capacitors in parallel.

Abstract: A semiconductor arrangement and methods of forming the same are described. A semiconductor arrangement includes a first tier including a first capacitor, a second tier over the first tier, the second tier including a second capacitor, and a first substrate between the first tier and the second tier. The first capacitor is connected to the second capacitor through the substrate. A plurality of tiers are contemplated, such that a total capacitance of the semiconductor arrangement increases based upon interconnection of metal layers of different tiers. Additionally, the semiconductor arrangement has a greater area efficiency as compared to multiple capacitors in parallel.

Abstract: A voltage-controlled oscillator is disclosed. The voltage-controlled oscillator includes an inverter circuit configured to output an oscillation signal. The first inverter circuit includes a complementary transistor pair and a transistor string. The complementary transistor pair includes a first switch transistor and a second switch transistor. The second switch transistor is connected to the first switch transistor, in which a first terminal of the second switch transistor is connected to a second terminal of the first switch transistor. The first delaying unit includes at least one delaying transistor. A first terminal of the at least one delaying transistor is connected to a control terminal of the second switch transistor. A second terminal of the at least one delaying transistor is connected to a control terminal of the first switch transistor. A control terminal of the at least one delaying transistor is configured to receive a voltage control signal.