Abstract: A high voltage semiconductor device includes a semiconductor substrate, a first drift region, a gate structure, a first sub gate structure, a first spacer structure, a second spacer structure, and a first insulation structure. The first drift region is disposed in the semiconductor substrate. The gate structure is disposed on the semiconductor substrate and separated from the first sub gate structure. The first sub gate structure and the first insulation structure are disposed on the first drift region. The first spacer structure is disposed on a sidewall of the gate structure. The second spacer structure is disposed on a sidewall of the first sub gate structure. At least a part of the first insulation structure is located between the first spacer structure and the second spacer structure. The first insulation structure is directly connected with the first drift region located between the first spacer structure and the second spacer structure.

Abstract: A magnetic multi-pole propulsion array system is applied to at least one external cathode and includes a plurality of magnetic multi-pole thrusters connected adjacent to each other. Each magnetic multi-pole thruster includes a propellant provider, a discharge chamber, an anode and a plurality of magnetic components. The propellant provider outputs propellant. The discharge chamber is connected with the propellant provider to accommodate the propellant. The anode is disposed inside the discharge chamber to generate an electric field. The plurality of magnetic components is respectively disposed on several sides of the discharge chamber. One of the several sides of the discharge chamber of the magnetic multi-pole thruster is applied for one side of a discharge chamber of another magnetic multi-pole thruster.

Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

Abstract: A high voltage semiconductor device includes a semiconductor substrate, a first drift region, a gate structure, a first sub gate structure, a first spacer structure, a second spacer structure, and a first insulation structure. The first drift region is disposed in the semiconductor substrate. The gate structure is disposed on the semiconductor substrate and separated from the first sub gate structure. The first sub gate structure and the first insulation structure are disposed on the first drift region. The first spacer structure is disposed on a sidewall of the gate structure. The second spacer structure is disposed on a sidewall of the first sub gate structure. At least a part of the first insulation structure is located between the first spacer structure and the second spacer structure. The first insulation structure is directly connected with the first drift region located between the first spacer structure and the second spacer structure.

Abstract: A laser machining device includes a pulsed laser generator, an accommodation chamber, a bandwidth broadening unit and a pulse compression unit. The pulsed laser generator is configured to emit a pulsed laser. The accommodation chamber has a gas inlet. The bandwidth broadening unit is disposed in the accommodation chamber, and is configured to broaden a frequency bandwidth of the pulsed laser to obtain a broad bandwidth pulsed laser. The pulse compression unit is disposed in the accommodation chamber. The bandwidth broadening unit and the pulse compression unit are arranged in order along a laser propagation path, and the pulse compression unit is configured to compress a pulse duration of the broad bandwidth pulsed laser.

Abstract: This disclosure provides a composite beam generator and a method of performing powder melting or sintering in additive manufacturing process using the same. The composite beam generator comprises: a beam splitter for splitting a beam into a first directed beam and a second directed beam; a beam shaper for shaping a transverse energy distribution profile of the second directed beam to non-circular; at least one beam delivery unit for guiding the first directed beam or the second directed beam; and a beam combiner for receiving the first directed beam and the second directed beam, and respectively generating a first output beam and a second output beam, and combining them into the composite beam.

Abstract: This disclosure provides a composite beam generator and a method of performing powder melting or sintering in additive manufacturing process using the same. The composite beam generator comprises: a beam splitter for splitting a beam into a first directed beam and a second directed beam; a beam shaper for shaping a transverse energy distribution profile of the second directed beam to non-circular; at least one beam delivery unit for guiding the first directed beam or the second directed beam; and a beam combiner for receiving the first directed beam and the second directed beam, and respectively generating a first output beam and a second output beam, and combining them into the composite beam.

Abstract: A method of annealing and real-time monitoring by applying laser beam includes steps of emitting a laser beam and splitting it into a first light beam and a second light beam; irradiating the first light beam along a first path at a to-be-annealed work-piece in order to process annealing for the work-piece; irradiating the second light beam along a second path at the to-be-annealed work-piece; having the to-be-annealed work-piece changed to an annealed work-piece after the process of annealing is completed for the to-be-annealed work-piece; retrieving a characteristic of a characteristic of changes of properties of matter generated from the second light beam irradiated at the to-be-annealed work-piece and the annealed work-piece.

Abstract: A dual pulsed light generation apparatus including a polarization beam splitter (PBS), a first polarization reflector, and a second polarization reflector is provided. The PBS has a first plane, a second plane, and a dividing interface located between the first plane and the second plane. The PBS is located in the transmission path of an incident pulsed light and used for dividing the incident pulsed light into a first polarization pulsed light reflected by the dividing interface and a second polarization pulsed light passing through the dividing interface. The first polarization reflector is disposed opposite to the first plane and transforms the first polarization pulsed light into a third polarization pulsed light passing through the dividing interface. The first polarization reflector is disposed opposite to the second plane.

Abstract: A dual pulsed light generation apparatus including a polarization beam splitter (PBS), a first polarization reflector, and a second polarization reflector is provided. The PBS has a first plane, a second plane, and a dividing interface located between the first plane and the second plane. The PBS is located in the transmission path of an incident pulsed light and used for dividing the incident pulsed light into a first polarization pulsed light reflected by the dividing interface and a second polarization pulsed light passing through the dividing interface. The first polarization reflector is disposed opposite to the first plane and transforms the first polarization pulsed light into a third polarization pulsed light passing through the dividing interface. The first polarization reflector is disposed opposite to the second plane.

Abstract: A method for streaming multi-LOD design feature of a 3D-CAD model comprises defining a LOD of a 3D-CAD model with each design feature of the 3D-CAD model, wherein the design feature is the smallest 3D-CAD model constructing unit; constructing the LOD of the 3D-CAD model into a decomposition data structure of LOD design feature recording each design feature of the 3D-CAD model in different LODs, wherein the LOD comprises all unit assembly faces of the design features; constructing a switch face display mechanism controlling whether each design feature of the 3D-CAD model is displayed; and encapsulating a designated design feature into a packet based on users' configuration and transmitting the packet.