Abstract: A method for forming a semiconductor device structure includes forming nanostructures over a substrate. The method also includes forming a gate structure wrapped around the nanostructures. The method also includes forming source/drain epitaxial structures over opposite sides of the nanostructures. The method also includes forming a first interlayer dielectric structure over the source/drain epitaxial structures. The method also includes removing the first interlayer dielectric structure. The method also includes forming a recess in the source/drain epitaxial structures. The method also includes forming a silicide structure in the recess. The method also includes forming a second interlayer dielectric structure over the silicide structure.

Abstract: A soft light-strip includes a soft lower strip detachably engaged with a transparent soft upper strip thus together constituting a sheath and a soft light-emitting device being received in the sheath for emitting light which includes a first light portion being directly emitted outward through the transparent soft upper strip and a second light portion being reflected by the soft lower strip and finally forwarded outward through the transparent soft upper strip.