Patents by Inventor Ping-Hsun LIN
Ping-Hsun LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240094625Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.Type: ApplicationFiled: November 29, 2023Publication date: March 21, 2024Inventors: Hsin-Chang LEE, Ping-Hsun LIN, Chih-Cheng LIN, Chia-Jen CHEN
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Publication number: 20240077804Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ping-Hsun LIN, Chien-Cheng CHEN, Shih Ju HUANG, Pei-Cheng HSU, Ta-Cheng LIEN, Hsin-Chang LEE
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Publication number: 20240069431Abstract: In a method of manufacturing an attenuated phase shift mask, a photo resist pattern is formed over a mask blank. The mask blank includes a transparent substrate, an etch stop layer on the transparent substrate, a phase shift material layer on the etch stop layer, a hard mask layer on the phase shift material layer and an intermediate layer on the hard mask layer. The intermediate layer is patterned by using the photo resist pattern as an etching mask, the hard mask layer is patterned by using the patterned intermediate layer as an etching mask, and the phase shift material layer is patterned by using the patterned hard mask layer as an etching mask. The intermediate layer includes at least one of a transition metal, a transition metal alloy, or a silicon containing material, and the hard mask layer is made of a different material than the intermediate layer.Type: ApplicationFiled: February 16, 2023Publication date: February 29, 2024Inventors: Wei-Che HSIEH, Chien-Cheng Chen, Ping-Hsun Lin, Ta-Cheng Lien, Hsin-Chang Lee
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Publication number: 20240045317Abstract: A method includes forming a reflective multilayer over a substrate; depositing a first capping layer over the reflective multilayer, wherein the first capping layer is made of a ruthenium-containing material or a chromium-containing material; performing a treatment to the first capping layer to introduce nitrogen or fluorine into the first capping layer; forming an absorption layer over the first capping layer; and patterning the absorption layer.Type: ApplicationFiled: August 2, 2022Publication date: February 8, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Chang LEE, Ping-Hsun LIN, Pei-Cheng HSU, Hsuan-I WANG, Hung-Yi TSAI, Bo-Wei SHIH, Ta-Cheng LIEN
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Patent number: 11860532Abstract: A method of making a semiconductor device includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern.Type: GrantFiled: July 26, 2022Date of Patent: January 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Chang Lee, Ping-Hsun Lin, Chih-Cheng Lin, Chia-Jen Chen
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Publication number: 20230408906Abstract: Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.Type: ApplicationFiled: August 4, 2023Publication date: December 21, 2023Inventors: Pei-Cheng Hsu, Ping-Hsun Lin, Ta-Cheng Lien, Hsin-Chang Lee
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Publication number: 20230402283Abstract: A method for fabricating a mask is provided. The method includes depositing a target layer over a dielectric substrate; forming a patterned photoresist layer over the target layer according to an integrated circuit (IC) layout; determining a plurality of dry etch control parameters according a material of the target layer and an information of the IC layout; and using a dry etcher set up with the dry etch control parameters, etching the target layer through the patterned photoresist layer.Type: ApplicationFiled: June 9, 2022Publication date: December 14, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ping-Hsun LIN, Hung-Yi TSAI, Hao-Ping CHENG, Ta-Cheng LIEN, Hsin-Chang LEE
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Publication number: 20230375921Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.Type: ApplicationFiled: August 4, 2023Publication date: November 23, 2023Inventors: Pei-Cheng HSU, Ping-Hsun LIN, Ta-Cheng LIEN, Hsin-Chang LEE
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Publication number: 20230375911Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.Type: ApplicationFiled: August 4, 2023Publication date: November 23, 2023Inventors: Ping-Hsun LIN, Pei-Cheng HSU, Ching-Fang YU, Ta-Cheng LIEN, Chia-Jen CHEN, Hsin-Chang LEE
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Patent number: 11815804Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.Type: GrantFiled: September 22, 2021Date of Patent: November 14, 2023Inventors: Ping-Hsun Lin, Pei-Cheng Hsu, Ching-Fang Yu, Ta-Cheng Lien, Chia-Jen Chen, Hsin-Chang Lee
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Publication number: 20230352309Abstract: Methods for plasma stability in a plasma treatment tool are disclosed. A laser is positioned within a plasma treatment chamber within a skin depth of the electromagnetic field generated therein. The laser can be synchronized with the electrical triggering signals that generate the electromagnetic field. This scheme provides a stable and efficient method of plasma ignition.Type: ApplicationFiled: April 29, 2022Publication date: November 2, 2023Inventors: Ping-Hsun Lin, Hung-Yi Tsai, Hao-Ping Cheng, Ta-Cheng Lien, Hsin-Chang Lee
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Publication number: 20230205072Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.Type: ApplicationFiled: February 27, 2023Publication date: June 29, 2023Inventors: Hung-Yi TSAI, Wei-Che HSIEH, Ta-Cheng LIEN, Hsin-Chang LEE, Ping-Hsun LIN, Hao-Ping CHENG, Ming-Wei CHEN, Szu-Ping TSAI
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Publication number: 20230161241Abstract: An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.Type: ApplicationFiled: May 19, 2022Publication date: May 25, 2023Inventors: Hsin-Chang LEE, Pei-Cheng HSU, Wei-Hao LEE, Ping-Hsun LIN, Ta-Cheng LIEN, Ching-Fang YU
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Patent number: 11592737Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.Type: GrantFiled: November 24, 2020Date of Patent: February 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hung-Yi Tsai, Wei-Che Hsieh, Ta-Cheng Lien, Hsin-Chang Lee, Ping-Hsun Lin, Hao-Ping Cheng, Ming-Wei Chen, Szu-Ping Tsai
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Publication number: 20230032950Abstract: A reflective mask includes a substrate, a lower reflective multilayer disposed over the substrate, an intermediate layer disposed over the lower reflective multilayer, an upper reflective multilayer disposed over the intermediate layer, a capping layer disposed over the upper reflective multilayer, and an absorber layer disposed in a trench formed in the upper reflective layers and over the intermediate layer. The intermediate layer includes a metal other than Cr, Ru, Si, Si compound and carbon.Type: ApplicationFiled: July 30, 2021Publication date: February 2, 2023Inventors: Wei-Che HSIEH, Chi-Lun LU, Ping-Hsun LIN, Fu-Sheng CHU, Ta-Cheng LIEN, Hsin-Chang LEE
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Publication number: 20220413378Abstract: Methods for removing a catalyst particle from a nanotube film used in a photolithographic patterning process are disclosed. The catalyst particle is identified based on its size in the nanotube film. This identification can be done using an inspection device such as a confocal microscope, which permits comparison of images taken in two or more separate focal planes to determine the size of particles. The catalyst particle is then exposed to a first absorption wavelength using a laser, which is selectively absorbed by the catalyst particle and which heats the catalyst particle to remove the catalyst particle from the nanotube film. Optionally, the catalyst particle-free nanotube film can be further exposed to a second absorption wavelength which is selectively absorbed by the film and promotes repair of the film. The resulting nanotube film can be used in a pellicle membrane.Type: ApplicationFiled: April 18, 2022Publication date: December 29, 2022Inventors: Ping-Hsun Lin, Pei-Cheng Hsu, Huan-Ling Lee, Ta-Cheng Lien, Hsin-Chang Lee, Chin-Hsiang Lin
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Publication number: 20220382148Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.Type: ApplicationFiled: September 23, 2021Publication date: December 1, 2022Inventors: Pei-Cheng HSU, Ping-Hsun LIN, Ta-Cheng LIEN, Hsin-Chang LEE
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Publication number: 20220365414Abstract: Fabricating a photomask includes forming a protection layer over a substrate. A plurality of multilayers of reflecting films are formed over the protection layer. A capping layer is formed over the plurality of multilayers. An absorption layer is formed over capping layer. A first photoresist layer is formed over portions of absorption layer. Portions of the first photoresist layer and absorption layer are patterned, forming first openings in absorption layer. The first openings expose portions of the capping layer. Remaining portions of first photoresist layer are removed and a second photoresist layer is formed over portions of absorption layer. The second photoresist layer covers at least the first openings. Portions of the absorption layer and capping layer and plurality of multilayer of reflecting films not covered by the second photoresist layer are patterned, forming second openings. The second openings expose portions of protection layer and second photoresist layer is removed.Type: ApplicationFiled: July 25, 2022Publication date: November 17, 2022Inventors: Pei-Cheng HSU, Ta-Cheng LIEN, Ping-Hsun LIN, Shih-Che WANG, Hsin-Chang LEE
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Publication number: 20220357660Abstract: A mask characterization method comprises measuring an interference signal of a reflection or transmission mask for use in lithography; and determining a quality metric for the reflection or transmission mask based on the interference signal. A mask characterization apparatus comprises a light source arranged to illuminate a reflective or transmissive mask with light whereby mask-reflected or mask-transmitted light is generated; an optical grating arranged to convert the mask-reflected or mask-transmitted light into an interference pattern; and an optical detector array arranged to generate an interference signal by measuring the interference pattern.Type: ApplicationFiled: May 10, 2021Publication date: November 10, 2022Inventors: Chien-Cheng Chen, Ping-Hsun Lin, Huan-Ling Lee, Ta-Cheng Lien, Chia-Jen Chen, Hsin-Chang Lee
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Publication number: 20220357661Abstract: A method of making a semiconductor device includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Inventors: Hsin-Chang LEE, Ping-Hsun LIN, Chih-Cheng LIN, Chia-Jen CHEN