Abstract: An optoelectronic semiconductor structure includes a first n-type semiconductor layer, a first quantum well layer, a first p-type semiconductor layer, and a second n-type semiconductor layer. The first quantum well layer is disposed on the first n-type semiconductor layer. The first p-type semiconductor layer is disposed on the first quantum well layer. The second n-type semiconductor layer is disposed on the first p-type semiconductor layer. The second n-type semiconductor layer includes both an n-type dopant and a p-type dopant. The concentration of the n-type dopant in the second n-type semiconductor layer is greater than the concentration of the p-type dopant in the second n-type semiconductor layer. The first n-type semiconductor layer, the first quantum well layer, the first p-type semiconductor layer, and the second n-type semiconductor layer form a bipolar phototransistor structure. A manufacturing method of the optoelectronic semiconductor structure is also provided.

Abstract: An optoelectronic semiconductor structure includes a first n-type semiconductor layer, a first quantum well layer, a first p-type semiconductor layer, and a second n-type semiconductor layer. The first quantum well layer is disposed on the first n-type semiconductor layer. The first p-type semiconductor layer is disposed on the first quantum well layer. The second n-type semiconductor layer is disposed on the first p-type semiconductor layer. The second n-type semiconductor layer includes both an n-type dopant and a p-type dopant. The concentration of the n-type dopant in the second n-type semiconductor layer is greater than the concentration of the p-type dopant in the second n-type semiconductor layer. The first n-type semiconductor layer, the first quantum well layer, the first p-type semiconductor layer, and the second n-type semiconductor layer form a bipolar phototransistor structure. A manufacturing method of the optoelectronic semiconductor structure is also provided.

Abstract: A method for fabricating a light emitting module that generates ultrabroadband near-infrared light and increasing the output power. The light emitting module includes a linearly polarized laser pump for generating a visible laser, a half-wave plate for adjusting the polarization orientation of the visible laser, and a crystal optical fiber disposed on the output light path of the half-wave plate. The core of the crystal optical fiber is made of forsterite (Mg2SiO4) doped with Cr3+ and Cr4+ ions. The doping process includes: depositing a chromium oxide layer on the lateral surface of the core and driving the chromium atoms into the core by high temperature diffusion; coupling the visible laser into the core to produce a spontaneous emission with wavelengths from 750 to 1350 nm continuously. Particularly, the continuous spectrum is adjustable by changing the polarization orientation of the visible laser via the half-wave plate.

Abstract: This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture. Thus, this method effectively reduces the optical-mode field diameter of the device, significantly decreases the spectral width of LED, and produces single-mode emission of VCSEL.

Abstract: This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture.

Abstract: The present invention discloses a light emitting module and a method for generating ultrabroadband near-infrared light and increasing the bandwidth and output power. The light emitting module includes a linearly polarized laser pump for generating a visible laser, a half-wave plate for adjusting the to polarization orientation of the visible laser, and a crystal optical fiber disposed on the output light path of the half-wave plate. The core of the crystal optical fiber is made of forsterite (Mg2SiO4) doped with Cr3+ and Cr4+ ions. The doping process comprises: depositing a chromium oxide layer on the lateral surface of the core and driving the chromium atoms into the core by high temperature diffusion; coupling the visible laser into the core to produce a spontaneous emission with wavelengths from 750 to 1350 nm continuously. Particularly, the continuous spectrum is adjustable by changing the polarization orientation of the visible laser via the half-wave plate.

Abstract: An optical amplifier includes an optical fiber having a core doped with transition metal ions, and at least one glass cladding enclosing the core. By using the fiber, the optical amplifier of the invention has a gain bandwidth of more than 300 nm including 1300-1600 nm band in low-loss optical communication.