Patents by Inventor Ping Hung Li

Ping Hung Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10115639
    Abstract: A method may include depositing a first conductive material in an opening disposed between a first semiconductor structure and a second semiconductor structure, the first conductive material comprising at least one first void. The method further includes removing a portion of the first conductive material to form a trench, the trench exposing the at least one first void and being defined by a remaining portion of the first conductive material; and depositing a second conductive material in the trench, the second conductive material and the remaining portion of the first conductive material forming a dummy gate layer.
    Type: Grant
    Filed: January 20, 2017
    Date of Patent: October 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ping Hung Li, Lun-Kuang Tan, Hui-Ying Lu, Chia-Ao Chang
  • Publication number: 20180151693
    Abstract: A method may include depositing a first conductive material in an opening disposed between a first semiconductor structure and a second semiconductor structure, the first conductive material comprising at least one first void. The method further includes removing a portion of the first conductive material to form a trench, the trench exposing the at least one first void and being defined by a remaining portion of the first conductive material; and depositing a second conductive material in the trench, the second conductive material and the remaining portion of the first conductive material forming a dummy gate layer.
    Type: Application
    Filed: January 20, 2017
    Publication date: May 31, 2018
    Inventors: Ping Hung Li, Lun-Kuang Tan, Hui-Ying Lu, Chia-Ao Chang