Abstract: An electronic device is disclosed. The electronic device includes a carrier having a first surface and a first lateral surface, an antenna adjacent to the first surface of the carrier, and a shielding layer covering a portion of the first lateral surface of the carrier. The shielding layer is configured to allow a gain of the antenna to be greater than 20 dB.

Abstract: An electronic device is disclosed. The electronic device includes a carrier having a first surface and a first lateral surface, an antenna adjacent to the first surface of the carrier, and a shielding layer covering a portion of the first lateral surface of the carrier. The shielding layer is configured to allow a gain of the antenna to be greater than 20 dB.

Abstract: The present disclosure provides an electronic wearable device. The electronic wearable device includes a first module having a first contact and a second module having a second contact. The first contact is configured to keep electrical connection with the second contact in moving with respect to each other during a wearing period.

Abstract: An electronic device is disclosed. The electronic device includes a carrier having a first surface and a first lateral surface, an antenna adjacent to the first surface of the carrier, and a shielding layer covering a portion of the first lateral surface of the carrier. The shielding layer is configured to allow a gain of the antenna to be greater than 20 dB.

Abstract: The present disclosure provides for a semiconductor device package and a method for manufacturing the same. The semiconductor device package includes a substrate, a conductive element and conductive layers. The substrate has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The conductive element is disposed on the first surface of the substrate. The conductive layers have a first portion on the conductive element and a second portion on the lateral surface of the substrate. A number of layers of the first portion of the conductive layers is different from a number of layers of the second portion of the conductive layers.

Abstract: The present disclosure provides for a semiconductor device package and a method for manufacturing the same. The semiconductor device package includes a substrate, a conductive element and conductive layers. The substrate has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The conductive element is disposed on the first surface of the substrate. The conductive layers have a first portion on the conductive element and a second portion on the lateral surface of the substrate. A number of layers of the first portion of the conductive layers is different from a number of layers of the second portion of the conductive layers.

Abstract: A system having a processor obtain a digital hemodynamic data from a hemodynamic sensor, obtain one or more vital sign parameters characterizing vital sign data from the digital hemodynamic data, derive differential parameters based on the one or more vital sign parameters, generate combinatorial parameters using the one or more vital sign parameters and the differential parameters, determine a risk score corresponding to a probability of a future hypotension event for the living subject based on a weighted combination of a plurality of hypotension profiling parameters including the one or more vital sign parameters characterizing vital sign data, the differential parameters and the combinatorial parameters, and invoke a sensory alarm if the risk score satisfies a predetermined risk criterion.

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.

Abstract: In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.

Abstract: In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.

Abstract: A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.

Abstract: Methods of depositing titanium nitride (TiN) films on a substrate are disclosed. The titanium nitride (TiN) films may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor and a NH3 gas on the substrate. The titanium-containing precursor and the NH3 gas react to form the titanium nitride (TiN) layer on the substrate. The titanium nitride (TiN) films are compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is fabricated. The titanium nitride films may also be used as an electrode of a three-dimensional capacitor structure such as for example, trench capacitors and crown capacitors.

Abstract: A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.

Abstract: In accordance with the present invention, a method is provided for forming an improved tungsten layer. In one embodiment, a CVD method for depositing a tungsten layer on a substrate includes forming a bilayer of titanium-nitride/titanium (TiN/Ti) over the substrate, placing the substrate in a deposition zone of a substrate processing chamber, and introducing a fluorine-free tungsten-containing precursor and a carrier gas into the deposition zone for forming a tungsten nucleation layer over the TiN/Ti bilayer. The Ti layer is between the TiN layer and the substrate. After the tungsten nucleation formation, a process gas including a tungsten-containing source and a reduction agent are introduced into the deposition zone for forming the bulk tungsten layer. In one embodiment, the fluorine-free tungsten-containing precursor includes W(CO)6, and the carrier gas is Argon.

Abstract: A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.

Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.