Patents by Inventor Ping-Jui Chen
Ping-Jui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11189611Abstract: An ESD protection semiconductor device includes a substrate. A gate set disposed on the substrate. A plurality of source fins and a plurality of drain fins having a first conductivity type are disposed in the substrate respectively at two sides of the gate set. A first doped fin is disposed in the substrate and positioned in between the source fins and spaced apart from the source fins. The first doped fin comprises a second conductivity type that is complementary to the first conductivity type. A second doped fin is formed in one of the drain fins and isolated from the one of the drain fins by an isolation structure. The second doped fin is electrically connected to the first doped fin.Type: GrantFiled: April 9, 2020Date of Patent: November 30, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Publication number: 20200235088Abstract: An ESD protection semiconductor device includes a substrate. A gate set disposed on the substrate. A plurality of source fins and a plurality of drain fins having a first conductivity type are disposed in the substrate respectively at two sides of the gate set. A first doped fin is disposed in the substrate and positioned in between the source fins and spaced apart from the source fins. The first doped fin comprises a second conductivity type that is complementary to the first conductivity type. A second doped fin is formed in one of the drain fins and isolated from the one of the drain fins by an isolation structure. The second doped fin is electrically connected to the first doped fin.Type: ApplicationFiled: April 9, 2020Publication date: July 23, 2020Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Patent number: 10672759Abstract: An ESD protection semiconductor device is disclosed. The ESD protection semiconductor device includes a substrate and a gate set disposed on the substrate. A plurality of source fins and a plurality of drain fins are formed in the substrate respectively at two sides of the gate set. At least a first doped fin is formed in the substrate at one side of the gate set the same as the source fins. A plurality of isolation structures are formed in one of the drain fins to define at least a second doped fin in the one of the drain fins. The source fins and the drain fins are of a first conductivity type. The first doped fin is of a second conductivity type that is complementary to the first conductivity type. The first doped fin and the second doped fin are electrically connected to each other.Type: GrantFiled: September 6, 2018Date of Patent: June 2, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Patent number: 10204897Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a doped region formed in the source region. The source region and the drain region include a first conductivity type, and the doped region includes a second conductivity type complementary to the first conductivity type. The doped region is electrically connected to a ground potential.Type: GrantFiled: April 11, 2017Date of Patent: February 12, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Publication number: 20190006348Abstract: An ESD protection semiconductor device is disclosed. The ESD protection semiconductor device includes a substrate and a gate set disposed on the substrate. A plurality of source fins and a plurality of drain fins are formed in the substrate respectively at two sides of the gate set. At least a first doped fin is formed in the substrate at one side of the gate set the same as the source fins. A plurality of isolation structures are formed in one of the drain fins to define at least a second doped fin in the one of the drain fins. The source fins and the drain fins are of a first conductivity type. The first doped fin is of a second conductivity type that is complementary to the first conductivity type. The first doped fin and the second doped fin are electrically connected to each other.Type: ApplicationFiled: September 6, 2018Publication date: January 3, 2019Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Patent number: 10103136Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the source region, and at least a second doped region formed in the drain region. The source region, the drain region and the second doped region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The second doped region is electrically connected to the first doped region. The gate set includes at least a first gate structure, a second gate structure, and a third gate structure.Type: GrantFiled: March 21, 2017Date of Patent: October 16, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Publication number: 20170221876Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a doped region formed in the source region. The source region and the drain region include a first conductivity type, and the doped region includes a second conductivity type complementary to the first conductivity type. The doped region is electrically connected to a ground potential.Type: ApplicationFiled: April 11, 2017Publication date: August 3, 2017Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Publication number: 20170194315Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the source region, and at least a second doped region formed in the drain region. The source region, the drain region and the second doped region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The second doped region is electrically connected to the first doped region. The gate set includes at least a first gate structure, a second gate structure, and a third gate structure.Type: ApplicationFiled: March 21, 2017Publication date: July 6, 2017Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Patent number: 9673189Abstract: An electrostatic discharge (ESD) unit is described, including a first device, and a second device coupled to the first device in parallel. In an ESD event, the first device is turned on before the second device is turned on. The second device may be turned on by the turned-on first device to form an ESD path in the ESD event.Type: GrantFiled: October 28, 2015Date of Patent: June 6, 2017Assignee: United Microelectronics Corp.Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Patent number: 9653450Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a first doped region formed in the drain region. The source region and the drain region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The first doped region is electrically connected to a ground potential.Type: GrantFiled: November 12, 2015Date of Patent: May 16, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Publication number: 20170125399Abstract: An electrostatic discharge (ESD) unit is described, including a first device, and a second device coupled to the first device in parallel. In an ESD event, the first device is turned on before the second device is turned on. The second device may be turned on by the turned-on first device to form an ESD path in the ESD event.Type: ApplicationFiled: October 28, 2015Publication date: May 4, 2017Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Patent number: 9640524Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the source region, and at least a second doped region formed in the drain region. The source region, the drain region and the second doped region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The second doped region is electrically connected to the first doped region.Type: GrantFiled: October 27, 2015Date of Patent: May 2, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Publication number: 20170110446Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a first doped region formed in the drain region. The source region and the drain region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The first doped region is electrically connected to a ground potential.Type: ApplicationFiled: November 12, 2015Publication date: April 20, 2017Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai
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Publication number: 20170084603Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the source region, and at least a second doped region formed in the drain region. The source region, the drain region and the second doped region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The second doped region is electrically connected to the first doped region.Type: ApplicationFiled: October 27, 2015Publication date: March 23, 2017Inventors: Chung-Yu Huang, Kuan-Cheng Su, Tien-Hao Tang, Ping-Jui Chen, Po-Ya Lai