Abstract: Embodiments of the present disclosure relates to a wet bench processing including an in-situ pre-treatment prior to performing the first set of wet bench operations. The pre-treatment may include a pre-clean operation and/or a pre-heat operation. The pre-treatment may be performed in one of the existing ONB tanks without requiring adding new tanks to an existing wet bench tool. The pre-clean operation removes particles from a batch of wafers to avoid or reduce cross-contamination and defect issues, thus improving the yield rate of the wet bench process. The pre-heat operation provides better control and stabilize the temperature in the CHB tank to stabilize the process, such as to stabilize an etch rate.

Abstract: The present disclosure relates to an apparatus for wafer cleaning. The apparatus includes an enclosure made of a noncombustible material, a wafer holder, a cleaning nozzle, at least one sensor, and an exhaust unit. The wafer holder can hold and heat a wafer. The cleaning nozzle can supply a flow of a cleaning fluid onto a surface of the wafer. The at least one sensor can detect attributes of the wafer. The exhaust unit can expel a vapor generated by the cleaning fluid in the enclosure. The exhaust unit can include a rinse nozzle to rinse the vapor passing through the exhaust unit with a mist.

Abstract: The present disclosure describes an apparatus for wafer cleaning. The apparatus includes an enclosure made of a noncombustible material, a wafer holder, a cleaning nozzle, at least one sensor, and an exhaust unit. The wafer holder can hold and heat a wafer. The cleaning nozzle can supply a flow of a cleaning fluid onto a surface of the wafer. The at least one sensor can detect attributes of the wafer. The exhaust unit can expel a vapor generated by the cleaning fluid in the enclosure. The exhaust unit can include a rinse nozzle to rinse the vapor passing through the exhaust unit with a mist.

Abstract: The present disclosure relates to an apparatus for wafer cleaning. The apparatus includes an enclosure made of a noncombustible material, a wafer holder, a cleaning nozzle, at least one sensor, and an exhaust unit. The wafer holder can hold and heat a wafer. The cleaning nozzle can supply a flow of a cleaning fluid onto a surface of the wafer. The at least one sensor can detect attributes of the wafer. The exhaust unit can expel a vapor generated by the cleaning fluid in the enclosure. The exhaust unit can include a rinse nozzle to rinse the vapor passing through the exhaust unit with a mist.

Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to a peripheral edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.

Abstract: Embodiments of the present disclosure relates to a wet bench processing including an in-situ pre-treatment prior to performing the first set of wet bench operations. The pre-treatment may include a pre-clean operation and/or a pre-heat operation. The pre-treatment may be performed in one of the existing ONB tanks without requiring adding new tanks to an existing wet bench tool. The pre-clean operation removes particles from a batch of wafers to avoid or reduce cross-contamination and defect issues, thus improving the yield rate of the wet bench process. The pre-heat operation provides better control and stabilize the temperature in the CHB tank to stabilize the process, such as to stabilize an etch rate.

Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to an edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.

Abstract: The present disclosure relates to an apparatus for wafer cleaning. The apparatus includes an enclosure made of a noncombustible material, a wafer holder, a cleaning nozzle, at least one sensor, and an exhaust unit. The wafer holder can hold and heat a wafer. The cleaning nozzle can supply a flow of a cleaning fluid onto a surface of the wafer. The at least one sensor can detect attributes of the wafer. The exhaust unit can expel a vapor generated by the cleaning fluid in the enclosure. The exhaust unit can include a rinse nozzle to rinse the vapor passing through the exhaust unit with a mist.

Abstract: A method of forming a semiconductor device includes soaking a batch of wafers in a first cleaning liquid, replacing the first cleaning liquid with a second cleaning liquid, soaking the batch of wafers in the second cleaning liquid, and soaking the batch of wafers in an etchant. The first cleaning liquid has a first temperature. The second cleaning liquid has a second temperature. The etchant has a third temperature. The second temperature is between the first temperature and the third temperature.

Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.

Abstract: The present disclosure describes an apparatus for wafer cleaning. The apparatus includes an enclosure made of a noncombustible material, a wafer holder, a cleaning nozzle, at least one sensor, and an exhaust unit. The wafer holder can hold and heat a wafer. The cleaning nozzle can supply a flow of a cleaning fluid onto a surface of the wafer. The at least one sensor can detect attributes of the wafer. The exhaust unit can expel a vapor generated by the cleaning fluid in the enclosure. The exhaust unit can include a rinse nozzle to rinse the vapor passing through the exhaust unit with a mist.

Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.

Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.

Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.

Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to an edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.

Abstract: The present disclosure relates to an apparatus for wafer cleaning. The apparatus includes an enclosure made of a noncombustible material, a wafer holder, a cleaning nozzle, at least one sensor, and an exhaust unit. The wafer holder can hold and heat a wafer. The cleaning nozzle can supply a flow of a cleaning fluid onto a surface of the wafer. The at least one sensor can detect attributes of the wafer. The exhaust unit can expel a vapor generated by the cleaning fluid in the enclosure. The exhaust unit can include a rinse nozzle to rinse the vapor passing through the exhaust unit with a mist.

Abstract: A method for etching an etch layer formed on a front side of a wafer and a wafer etching apparatus are provided. The wafer etching apparatus includes a first flow channel, a temperature-regulating module, and a second flow channel. The first flow channel is configured to carry a preheated/precooled liquid for controlling a temperature of a wafer. The temperature-regulating module is coupled to the first flow channel. The temperature-regulating module is configured to control a temperature of the liquid in the first flow channel. The second flow channel is configured to carry an etchant for etching an etch layer formed on a front side of the wafer. The method includes: controlling the temperature of the wafer by using the preheated/precooled liquid; and etching the etch layer with the etchant.

Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.

Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.

Abstract: A method for etching an etch layer formed on a front side of a wafer and a wafer etching apparatus are provided. The wafer etching apparatus includes a first flow channel, a temperature-regulating module, and a second flow channel. The first flow channel is configured to carry a preheated/precooled liquid for controlling a temperature of a wafer. The temperature-regulating module is coupled to the first flow channel. The temperature-regulating module is configured to control a temperature of the liquid in the first flow channel. The second flow channel is configured to carry an etchant for etching an etch layer formed on a front side of the wafer. The method includes: controlling the temperature of the wafer by using the preheated/precooled liquid; and etching the etch layer with the etchant.