Abstract: Post-copy is one of the two key techniques (besides pre-copy) for live migration of virtual machines in data centers. Post-copy provides deterministic total migration time and low downtime for write-intensive VMs. However, if post-copy migration fails for any reason, the migrating VM is lost because the VM's latest consistent state is split between the source and destination nodes during migration. PostCopyFT provides a new approach to recover a VM after a destination or network failure during post-copy live migration using an efficient reverse incremental checkpointing mechanism. PostCopyFT was implemented and evaluated in the KVM/QEMU platform. Experimental results show that the total migration time of post-copy remains unchanged while maintaining low failover time, downtime, and application performance overhead.

Abstract: Measurement of Kullback-Leibler Divergence (KLD) between hidden Markov models (HMM) of acoustic units utilizes an unscented transform to approximate KLD between Gaussian mixtures. Dynamic programming equalizes the number of states between HMMs having a different number of states, while the total KLD of the HMMs is obtained by summing individual KLDs calculated by state pair by state pair comparisons.

Abstract: Speech recognition such as command and control speech recognition generally use a context free grammar to constrain the decoding process. Word or subword background model are constructed to repopulate dynamic hypothesis space, especially when word spareness is at issue. The background models can be later used in speech recognition. During speech recognition, background and conventional context free grammar decoding are used to measure confidence. The discussion above is merely provided for general background information and is not intended to be used as an aid in determining the scope of the claimed subject matter.

Abstract: Multiple input modalities are selectively used by a user or process to prune a word graph. Pruning initiates rescoring in order to generate a new word graph with a revised best path.

Abstract: Recognition of events can be performed by accessing an audio signal having static and dynamic features. A value for the audio signal can be calculated by utilizing different weights for the static and dynamic features such that a frame of the audio signal can be associated with a particular event. A filter can also be used to aid in determining the event for the frame.

Abstract: Measurement of Kullback-Leibler Divergence (KLD) between hidden Markov models (HMM) of acoustic units utilizes an unscented transform to approximate KLD between Gaussian mixtures. Dynamic programming equalizes the number of states between HMMs having a different number of states, while the total KLD of the HMMs is obtained by summing individual KLDs calculated by state pair by state pair comparisons.

Abstract: A dynamic threshold voltage IGFET such as a MOSFET is operable at voltages of 0.6 volt or less. The threshold voltage of the transistor is reduced to zero volt or less by interconnecting the gate contact and the device body in which the voltage controlled channel is located. Several efficient connections using through hole plating or polycrystalline silicon gate extension are disclosed. A higher power supply voltage can be used by interconnecting the gate and device body through a smaller MOSFET.

Abstract: An SOI MOSFET having improved electrical characteristics includes a low barrier body contact under the source region, and alternatively under the drain region, to facilitate collection and removal of current carriers generated by impact ionization. Fully-depleted and non-fully-depleted SOI MOSFETs can be integrated on the same chip by providing some transistors with thicker source and drain regions with a recessed channel therebetween and by selective channel dopant implant. Accordingly, digital circuitry and analog circuitry can be combined on one substrate. Improved electrostatic discharge protection is provided by fabricating transistors for the protection circuit directly in the supporting substrate by first removing the silicon thin film and underlying insulation barrier.

Abstract: Wavelength tunability and single frequency output are achieved in a coherent light source employing an adjustably controllable reflector. The light source includes a gain medium coupled to a single-mode fiber having a partially reduced cladding region at a predetermined distance from the gain medium. A Bragg reflector is either formed on the reduced cladding region of the single-mode fiber or formed on an external element in close proximity to the reduced cladding region. A single resonant optical cavity is formed by placing another reflector on the side of the gain medium opposite the gain medium-to-fiber coupling. Wavelength tuning of the light source is accomplished by controllably adjusting the period or the Bragg reflector element.

Abstract: A musical adapter for use with a nursing bottle comprising an upper portion and a lower portion, which two portions being detachably joined together to form a single body. An electronic muscial device of integrated circuits is disposed in the interior space of the lower portion and is capable of producing a melodious tune upon the bottle being lifted or tipped up.

Abstract: An electrically programmable and eraseable memory element using source-side hot-electron injection. A semi-conductor substrate of a first conductivity type is provided with a source region and a drain region of opposite conductivity type and a channel region of the first conductivity type extending between the source and drain regions. A control gate overlies the channel region, and a floating gate insulated from the control gate, the source and drain regions and the channel region is located either directly underneath the control gate over the channel region, partially underneath the control gate over the channel region or spaced to the source side of the control gate. A weak gate control region is provided in the device near the source so that a relatively high channel electric field for promoting hot-electron injection is created under the weak gate control region when the device is biased for programming.

Abstract: In a metal-oxide-semiconductor device process, parasitic capacitance is significantly reduced by differentially oxidizing a substrate and a gate mesa thereon prior to ion implantation and "drive-in" of the drain and source regions. This results in a channel region being formed in the substrate beneath and substantially coextensive with the gate mesa. The conductivity of the channel region is different from the conductivity of the adjacent source and drain regions. In one embodiment, the source and drain regions each extend to a greater depth into the substrate with increasing distance from the channel region.

Abstract: A photodetector useful at long wavelengths where silicon normally is transparent. It includes a photodiode stage which comprises a silicide layer forming a Schottky-barrier junction with a silicon substrate and which is integrated with an amplification stage which uses a silicon transistor adapted to amplify the photovoltaic voltage derived by the photodiode stage. In the preferred embodiment, the silicide layer forms the grid of a permeable base transistor.

Abstract: A plurality of semiconductor lasers (431-434) and a photodetector (120) are mounted on a silicon substrate (100) having an integrated circuit (101) fabricated therein. The integrated circuit includes a biasing circuit (405) for establishing a threshold current level that is dependent on the output of the photodetector and a modulator circuit (404) for providing a modulation current that is dependent on the digital values in an input signal. A semiconductor switch (406) selects only one of the plurality of semiconductor lasers for activation by the biasing and modulator circuits. The integrated circuit also includes a circuit (408) that operates the semiconductor switch so as to selectively activate a different one of the plurality of semiconductor lasers in response to either a predetermined output from said photodetector or in response to an external supervisory signal.

Abstract: A stripe geometry is fabricated in a laser-diode structure having a plurality of epitaxial layers, including in tandem an undoped active semiconductor layer (3), a p-doped semiconductor layer (4), a moderately n-doped semiconductor layer (5) and a heavily p.sup.+ -doped layer (6) by focusing laser radiation on the n-doped semiconductor layer (5). The laser radiation is chosen to have a wavelength which passes through the p.sup.+ -doped layer (6) without absorption. When the laser radiation is absorbed in the n-doped layer, heat is generated which causes diffusion of p-dopant from the two adjacent layers to convert the exposed region to p-type. As the laser beam is scanned, a stripe having a forward pn junction for laser action is formed.

Abstract: Nb.sub.3 Ge, Nb.sub.3 Al and Nb.sub.3 Si are prepared in A15 structures at the exact stoichiometric ratio with epitaxial growth on selected substrates. The phase diagrams of the materials are altered by this technique and only the A15 phase is stable at the stoichiometric ratios thus permitting attainment of higher and sharper transition temperatures.

Abstract: An apparatus is disclosed for making unchirped holographic diffraction gratings that are formed from curved lines in a thin film. The gratings so made focus as well as reflect light that is confined to the film incorporating the grating. SUBACKGROUND OF THE INVENTIONGratings have been incorporated in integrated optics devices for several purposes, including the fabrication of distributed feedback lasers, light-wave couplers, and band-rejection filters. Integrated-optics gratings known to the prior art were composed at straight lines, and therefore could not focus the light being processed. Gratings that combine focusing and diffraction were known to be desirable, but the prior art was unable to produce them.The closest prior art that has come to our attention is a method and apparatus for producing curved-line holographic gratings that have unequally spaced, or chirped, lines (U.S. Pat. No. 3,578,845, issued on May 18, 1971 to K. E. Brooks et al).

Abstract: A method of epitaxial crystal growth is disclosed in which the lattice constants of adjacent layers are in the ratios of small integers other than one. This method permits the use of previously incompatible compounds, in particular the combination of magneto optic and electro optic elements on the same substrate.

Abstract: A process is described for making optical circuits on LiTaO.sub.3 substrates. The process involves putting down an epitaxial layer of LiNbO.sub.3 on the LiTaO.sub.3 substrates. Growth is preferably carried out on certain planes of the LiTaO.sub.3. These optical circuits are unique in that they are smooth, uniform in thickness and have a refractive index significantly larger than that of the substrate. This is advantageous in optical circuitry, since the optical modes in the circuits are quite distinct and can be coupled separately using such light sources as lasers and light emitting diodes.