Patents by Inventor Ping-Kang Huang
Ping-Kang Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210366814Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.Type: ApplicationFiled: May 22, 2020Publication date: November 25, 2021Inventors: Shang-Yun Hou, Hsien-Pin Hu, Sao-Ling Chiu, Wen-Hsin Wei, Ping-Kang Huang, Chih-Ta Shen, Szu-Wei Lu, Ying-Ching Shih, Wen-Chih Chiou, Chi-Hsi Wu, Chen-Hua Yu
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Publication number: 20210327723Abstract: One embodiment includes partially forming a first through via in a substrate of an interposer, the first through via extending into a first side of the substrate of the interposer. The method also includes bonding a first die to the first side of the substrate of the interposer. The method also includes recessing a second side of the substrate of the interposer to expose the first through via, the first through via protruding from the second side of the substrate of the interposer, where after the recessing, the substrate of the interposer is less than 50 ?m thick. The method also includes and forming a first set of conductive bumps on the second side of the substrate of the interposer, at least one of the first set of conductive bumps being electrically coupled to the exposed first through via.Type: ApplicationFiled: October 7, 2020Publication date: October 21, 2021Inventors: Chung-Yu Lu, Ping-Kang Huang, Sao-Ling Chiu, Shang-Yun Hou
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Patent number: 11152312Abstract: A package structure includes an interposer, a die over and bonded to the interposer, and a Printed Circuit Board (PCB) underlying and bonded to the interposer. The interposer is free from transistors therein (add transistor), and includes a semiconductor substrate, an interconnect structure over the semiconductor substrate, through-vias in the silicon substrate, and redistribution lines on a backside of the silicon substrate. The interconnect structure and the redistribution lines are electrically coupled through the through-vias.Type: GrantFiled: May 25, 2018Date of Patent: October 19, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sao-Ling Chiu, Kuo-Ching Hsu, Wei-Cheng Wu, Ping-Kang Huang, Shang-Yun Hou, Shin-Puu Jeng, Chen-Hua Yu
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Publication number: 20210305145Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, a molding compound and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The at least one semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The molding compound is disposed over the interposer and laterally encapsulates the at least one semiconductor die. The molding compound laterally wraps around the interposer and the molding compound at least physically contacts a portion of the sidewalls of the interposer. The connectors are disposed on the second surface of the interposer, and are electrically connected with the at least one semiconductor die through the interposer.Type: ApplicationFiled: March 26, 2020Publication date: September 30, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chi-Ming Huang, Ping-Kang Huang, Sao-Ling Chiu, Shang-Yun Hou
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Publication number: 20210202389Abstract: A semiconductor package includes a first interposer, a second interposer, a first die, a second die and at least one bridge structure. The first interposer and the second interposer are embedded by a first dielectric encapsulation. The first die is disposed over and electrically connected to the first interposer. The second die is disposed over and electrically connected to the second interposer. The at least one bridge structure is disposed between the first die and the second die.Type: ApplicationFiled: November 6, 2020Publication date: July 1, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Yen Hsieh, Chun-Hui Yu, Ping-Kang Huang, Sao-Ling Chiu, Yi-Jhang Wang
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Publication number: 20210193550Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a lid and outer flanges. The lid overlies the semiconductor package. The outer flanges are disposed at edges of the lid, are connected with the lid, extend from the lid towards the circuit substrate, and face side surfaces of the semiconductor package. The lid has a first region that is located over the semiconductor package and is thicker than a second region that is located outside a footprint of the semiconductor package.Type: ApplicationFiled: December 18, 2019Publication date: June 24, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wensen Hung, Ping-Kang Huang, Sao-Ling Chiu, Tsung-Shu Lin, Tsung-Yu Chen, Chien-Yuan Huang, Chen-Hsiang Lao
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Patent number: 10854567Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method comprising forming a conductive pad in a first substrate, forming an interconnecting structure over the conductive pad and the first substrate, the interconnecting structure comprising a plurality of metal layers disposed in a plurality of dielectric layers, bonding a die to a first side of the interconnecting structure, and etching the first substrate from a second side of the interconnecting structure, the etching exposing a portion of the conductive pad.Type: GrantFiled: December 17, 2019Date of Patent: December 1, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Yun Hou, Sao-Ling Chiu, Ping-Kang Huang, Wen-Hsin Wei, Wen-Chih Chiou, Shin-Puu Jeng, Bruce C. S. Chou
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Publication number: 20200312770Abstract: Board substrates, three-dimensional integrated circuit structures and methods of forming the same are disclosed. A board substrate includes a core layer, a first build-up layer, a second build-up layer, a first group of bumps, a second first group of bumps and at least one first underfill blocking wall. The first build-up layer and the second build-up layer are disposed on opposite sides of the core layer. The first group of bumps is disposed over the first build-up layer. The second first group of bumps is disposed over the first build-up layer. The at least one first underfill blocking wall is disposed over the first build-up layer and between the first group of bumps and the second group of bumps.Type: ApplicationFiled: September 5, 2019Publication date: October 1, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chung-Yu Lu, Ping-Kang Huang, Sao-Ling Chiu
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Publication number: 20200126938Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method comprising forming a conductive pad in a first substrate, forming an interconnecting structure over the conductive pad and the first substrate, the interconnecting structure comprising a plurality of metal layers disposed in a plurality of dielectric layers, bonding a die to a first side of the interconnecting structure, and etching the first substrate from a second side of the interconnecting structure, the etching exposing a portion of the conductive pad.Type: ApplicationFiled: December 17, 2019Publication date: April 23, 2020Inventors: Shang-Yun Hou, Sao-Ling Chiu, Ping-Kang Huang, Wen-Hsin Wei, Wen-Chih Chiou, Shin-Puu Jeng, Bruce C.S. Chou
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Patent number: 10529679Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method comprising forming a conductive pad in a first substrate, forming an interconnecting structure over the conductive pad and the first substrate, the interconnecting structure comprising a plurality of metal layers disposed in a plurality of dielectric layers, bonding a die to a first side of the interconnecting structure, and etching the first substrate from a second side of the interconnecting structure, the etching exposing a portion of the conductive pad.Type: GrantFiled: May 28, 2015Date of Patent: January 7, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Yun Hou, Sao-Ling Chiu, Ping-Kang Huang, Wen Hsin Wei, Wen-Chih Chiou, Shin-Puu Jeng, Bruce C. S. Chou
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Publication number: 20180277495Abstract: A package structure includes an interposer, a die over and bonded to the interposer, and a Printed Circuit Board (PCB) underlying and bonded to the interposer. The interposer is free from transistors therein (add transistor), and includes a semiconductor substrate, an interconnect structure over the semiconductor substrate, through-vias in the silicon substrate, and redistribution lines on a backside of the silicon substrate. The interconnect structure and the redistribution lines are electrically coupled through the through-vias.Type: ApplicationFiled: May 25, 2018Publication date: September 27, 2018Inventors: Sao-Ling Chiu, Kuo-Ching Hsu, Wei-Cheng Wu, Ping-Kang Huang, Shang-Yun Hou, Shin-Puu Jeng, Chen-Hua Yu
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Patent number: 9984981Abstract: A package structure includes an interposer, a die over and bonded to the interposer, and a Printed Circuit Board (PCB) underlying and bonded to the interposer. The interposer is free from transistors therein (add transistor), and includes a semiconductor substrate, an interconnect structure over the semiconductor substrate, through-vias in the silicon substrate, and redistribution lines on a backside of the silicon substrate. The interconnect structure and the redistribution lines are electrically coupled through the through-vias.Type: GrantFiled: April 24, 2017Date of Patent: May 29, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sao-Ling Chiu, Kuo-Ching Hsu, Wei-Cheng Wu, Ping-Kang Huang, Shang-Yun Hou, Shin-Puu Jeng, Chen-Hua Yu
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Patent number: 9824902Abstract: An integrated fan-out package including a chip module, a second integrated circuit, a second insulating encapsulation, and a redistribution circuit structure is provided. The chip module includes a first insulating encapsulation and a first integrated circuit embedded in the first insulating encapsulation, and the first integrated circuit includes a first surface and first conductive terminals on the first surface. The second integrated circuit includes a second surface and second conductive terminals on the second surface. The chip module and the second integrated circuit are embedded in the second insulating encapsulation. The first and second conductive terminals are accessibly exposed from the first and second insulating encapsulation. The redistribution circuit structure covers the first surface, the second surfaces, the first insulating encapsulation, and the second insulating encapsulation. The redistribution circuit structure is electrically connected to the first and second conductive terminals.Type: GrantFiled: July 12, 2016Date of Patent: November 21, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hao-Cheng Hou, Chien-Hsun Lee, Chen-Hua Yu, Chung-Shi Liu, Jung-Wei Cheng, Ping-Kang Huang, Sao-Ling Chiu, Tsung-Ding Wang
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Publication number: 20170229401Abstract: A package structure includes an interposer, a die over and bonded to the interposer, and a Printed Circuit Board (PCB) underlying and bonded to the interposer. The interposer is free from transistors therein (add transistor), and includes a semiconductor substrate, an interconnect structure over the semiconductor substrate, through-vias in the silicon substrate, and redistribution lines on a backside of the silicon substrate. The interconnect structure and the redistribution lines are electrically coupled through the through-vias.Type: ApplicationFiled: April 24, 2017Publication date: August 10, 2017Inventors: Sao-Ling Chiu, Kuo-Ching Hsu, Wei-Cheng Wu, Ping-Kang Huang, Shang-Yun Hou, Shin-Puu Jeng, Chen-Hua Yu
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Patent number: 9633869Abstract: A package structure includes an interposer, a die over and bonded to the interposer, and a Printed Circuit Board (PCB) underlying and bonded to the interposer. The interposer is free from transistors therein (add transistor), and includes a semiconductor substrate, an interconnect structure over the semiconductor substrate, through-vias in the silicon substrate, and redistribution lines on a backside of the silicon substrate. The interconnect structure and the redistribution lines are electrically coupled through the through-vias.Type: GrantFiled: August 16, 2013Date of Patent: April 25, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sao-Ling Chiu, Kuo-Ching Hsu, Wei-Cheng Wu, Ping-Kang Huang, Shang-Yun Hou, Shin-Puu Jeng, Chen-Hua Yu
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Publication number: 20150262958Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method comprising forming a conductive pad in a first substrate, forming an interconnecting structure over the conductive pad and the first substrate, the interconnecting structure comprising a plurality of metal layers disposed in a plurality of dielectric layers, bonding a die to a first side of the interconnecting structure, and etching the first substrate from a second side of the interconnecting structure, the etching exposing a portion of the conductive pad.Type: ApplicationFiled: May 28, 2015Publication date: September 17, 2015Inventors: Shang-Yun Hou, Sao-Ling Chiu, Ping-Kang Huang, Wen Hsin Wei, Wen-Chih Chiou, Shin-Puu Jeng, Bruce C.S. Chou
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Patent number: 9048231Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method comprising forming a conductive pad in a first substrate, forming an interconnecting structure over the conductive pad and the first substrate, the interconnecting structure comprising a plurality of metal layers disposed in a plurality of dielectric layers, bonding a die to a first side of the interconnecting structure, and etching the first substrate from a second side of the interconnecting structure, the etching exposing a portion of the conductive pad.Type: GrantFiled: June 25, 2014Date of Patent: June 2, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Yun Hou, Sao-Ling Chiu, Ping-Kang Huang, Wen Hsin Wei, Wen-Chih Chiou, Shin-Puu Jeng, Bruce C. S. Chou
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Publication number: 20150048503Abstract: A package structure includes an interposer, a die over and bonded to the interposer, and a Printed Circuit Board (PCB) underlying and bonded to the interposer. The interposer is free from transistors therein (add transistor), and includes a semiconductor substrate, an interconnect structure over the semiconductor substrate, through-vias in the silicon substrate, and redistribution lines on a backside of the silicon substrate. The interconnect structure and the redistribution lines are electrically coupled through the through-vias.Type: ApplicationFiled: August 16, 2013Publication date: February 19, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sao-Ling Chiu, Kuo-Ching Hsu, Wei-Cheng Wu, Ping-Kang Huang, Shang-Yun Hou, Shin-Puu Jeng, Chen-Hua Yu
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Publication number: 20140306341Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method comprising forming a conductive pad in a first substrate, forming an interconnecting structure over the conductive pad and the first substrate, the interconnecting structure comprising a plurality of metal layers disposed in a plurality of dielectric layers, bonding a die to a first side of the interconnecting structure, and etching the first substrate from a second side of the interconnecting structure, the etching exposing a portion of the conductive pad.Type: ApplicationFiled: June 25, 2014Publication date: October 16, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shang-Yun Hou, Sao-Ling Chiu, Ping-Kang Huang, Wen Hsin Wei, Wen-Chih Chiou, Shin-Puu Jeng, Bruce C.S. Chou
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Patent number: 8802504Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method comprising forming a conductive pad in a first substrate, forming an interconnecting structure over the conductive pad and the first substrate, the interconnecting structure comprising a plurality of metal layers disposed in a plurality of dielectric layers, bonding a die to a first side of the interconnecting structure, and etching the first substrate from a second side of the interconnecting structure, the etching exposing a portion of the conductive pad.Type: GrantFiled: July 10, 2013Date of Patent: August 12, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Yun Hou, Sao-Ling Chiu, Ping-Kang Huang, Wen Hsin Wei, Wen-Chih Chiou, Shin-Puu Jeng, Bruce C. S. Chou