Abstract: A device includes a first memory subarray, a first modulation circuit, a second memory subarray, a second modulation circuit and a control signal generator. The first modulation circuit is coupled to the first memory subarray. The second memory subarray is located between the first memory subarray and the first modulation circuit along a direction. The second modulation circuit is coupled to the second memory subarray. The control signal generator is configured to generate a first control signal to trigger the first modulation circuit according to a first length of the first memory subarray along the direction, and configured to generate a second control signal to trigger the second modulation circuit according to a second length of the second memory subarray along the direction.

Abstract: A circuit comprises a memory array, a tracking bit line and a timing control circuit. The memory array comprises a plurality of tracking cells. The tracking bit line is coupled between a first node and the plurality of tracking cells. The timing control circuit is coupled to the first node and comprises a Schmitt trigger. The Schmitt trigger generates a negative bit line enable signal in response to that a voltage level on the first node being below a low threshold voltage value of the Schmitt trigger. The timing control circuit generates a negative bit line trigger signal according to the negative bit line enable signal for adjusting voltage levels of a plurality of bit lines of the memory array.

Abstract: A circuit comprises a memory array, a tracking bit line and a timing control circuit. The memory array comprises a plurality of tracking cells. The tracking bit line is coupled between a first node and the plurality of tracking cells. The timing control circuit is coupled to the first node and comprises a Schmitt trigger. The Schmitt trigger generates a negative bit line enable signal in response to that a voltage level on the first node being below a low threshold voltage value of the Schmitt trigger. The timing control circuit generates a negative bit line trigger signal according to the negative bit line enable signal for adjusting voltage levels of a plurality of bit lines of the memory array.

Abstract: A microbial strain of Lachnospiraceae is a species of a genus of the family Lachnospiraceae (Lachnospiraceae sp.). The nucleotide sequence of 16S rRNA of the microbial strain of Lachnospiraceae is as shown in SEQ ID No. 1. The intestinal anaerobic microbial strain Lachnospiraceae sp. can inhibit the growth rate of tumors and can be used for preventing and/or treating tumors. The tumors include at least one of liver cancer, colon cancer, rectal cancer, colorectal cancer, lung cancer, breast cancer, cervical cancer, ovarian cancer, pancreatic cancer, cholangiocarcinoma, kidney cancer, and fibrosarcoma.

Abstract: A device includes a first memory subarray, a first modulation circuit, a second memory subarray, a second modulation circuit and a control signal generator. The first modulation circuit is coupled to the first memory subarray. The second memory subarray is located between the first memory subarray and the first modulation circuit along a direction. The second modulation circuit is coupled to the second memory subarray. The control signal generator is configured to generate a first control signal to trigger the first modulation circuit according to a first length of the first memory subarray along the direction, and configured to generate a second control signal to trigger the second modulation circuit according to a second length of the second memory subarray along the direction.

Abstract: A semiconductor die bonding device has a bond arm body, a collet attached at a first end of the bond arm body for holding a semiconductor die during a pick-and-place operation, and a voice coil actuator located at a second end of the bond arm body for driving the bond arm body to rotate about a pivot positioned between the collet and the voice coil actuator. The voice coil actuator includes a pair of arc magnets having concave arced surfaces facing the pivot that form an arc-shaped gap between the arc magnets, and an arc coil including a concave arced surface disposed within the arc-shaped gap that is configured to be movable relative to the arc magnets.

Abstract: A circuit comprises a memory array, a tracking bit line and a timing control circuit. The memory array comprises a plurality of tracking cells. The tracking bit line is coupled between a first node and the plurality of tracking cells. The timing control circuit is coupled to the first node and comprises a Schmitt trigger. The Schmitt trigger generates a negative bit line enable signal in response to that a voltage level on the first node being below a low threshold voltage value of the Schmitt trigger. The timing control circuit generates a negative bit line trigger signal according to the negative bit line enable signal for adjusting voltage levels of a plurality of bit lines of the memory array.

Abstract: Christensenella sp MNO-863 deposited under the Access number of GDMCC No: 61117 may be used for treating or preventing liver function damage and related diseases, digestive tract mucosa damage and related diseases, diabetes, obesity, and/or related diseases. Christensenella sp MNO-863 may also be used in combination with hypoglycemic and lipid-lowering drugs, and has a synergistic effect on liver function damage and related diseases, diabetes, and obesity and related diseases.

Abstract: A device is provided. The device includes multiple transistors, a first sense circuit, and a precharge circuit. The transistors are coupled to a tracking bit line and configured to generate a first tracking signal. The first sense circuit is configured to generate a first sense tracking signal in response to the first tracking signal. The precharge circuit is configured to generate, in response to a rising edge and a falling edge of the first sense tracking signal, a precharge signal for precharging data lines.

Abstract: A device is provided. The device includes multiple transistors, a first sense circuit, and a precharge circuit. The transistors are coupled to a tracking bit line and configured to generate a first tracking signal. The first sense circuit is configured to generate a first sense tracking signal in response to the first tracking signal. The precharge circuit is configured to generate, in response to a rising edge and a falling edge of the first sense tracking signal, a precharge signal for precharging data lines.

Abstract: A device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. The memory array has bit cells arranged in rows and columns. Each bit line pair is connected to a respective column of bit cells. Each word line is connected to a respective row of bit cells. The modulation circuit is coupled with at least one bit line pair. The control signal generator is coupled with the modulation circuit. The control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. The control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. A method of controlling aforesaid device is also disclosed.

Abstract: A device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. The memory array has bit cells arranged in rows and columns. Each bit line pair is connected to a respective column of bit cells. Each word line is connected to a respective row of bit cells. The modulation circuit is coupled with at least one bit line pair. The control signal generator is coupled with the modulation circuit. The control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. The control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. A method of controlling aforesaid device is also disclosed.

Abstract: A device includes a first memory subarray, a first modulation circuit, a second memory subarray, a second modulation circuit and a control signal generator. The first modulation circuit is coupled to the first memory subarray. The second memory subarray is located between the first memory subarray and the first modulation circuit along a direction. The second modulation circuit is coupled to the second memory subarray. The control signal generator is configured to generate a first control signal to trigger the first modulation circuit according to a first length of the first memory subarray along the direction, and configured to generate a second control signal to trigger the second modulation circuit according to a second length of the second memory subarray along the direction.

Abstract: A circuit comprises a memory array, a tracking bit line and a timing control circuit. The memory array comprises a plurality of tracking cells. The tracking bit line is coupled between a first node and the plurality of tracking cells. The timing control circuit is coupled to the first node and comprises a Schmitt trigger. The Schmitt trigger generates a negative bit line enable signal in response to that a voltage level on the first node being below a low threshold voltage value of the Schmitt trigger. The timing control circuit generates a negative bit line trigger signal according to the negative bit line enable signal for adjusting voltage levels of a plurality of bit lines of the memory array.

Abstract: A circuit includes a tracking word line, a power switch, a tracking bit line, a sense circuit. The power switch is coupled between the tracking word line and a first node. The power switch is configured to discharge a voltage level on the first node in response to a clock pulse signal transmitted through the tracking word line to the power switch. The tracking bit line is coupled between the first node and a plurality of tracking cells in a memory array. The sense circuit is coupled between the first node and a second node. The sense circuit is configured to generate a negative bit line enable signal in response to that the voltage level on the first node is below a threshold voltage value of the sense circuit.

Abstract: The disclosure, in one aspect, relates to compositions containing non-pathogenic Burkholderia species SSG and/or extracts from SSG cultures and methods of making and using the same. Also disclosed are methods for treating and preventing plant diseases caused by pathogens, the methods including applying the disclosed compositions to plants and/or soil, diseased leaf debris, or other plant growth media surrounding the plants. Finally, disclosed are methods for increasing plant growth using the disclosed compositions. The compositions are effective as well as environmentally benign and are not detrimental to human or animal health This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: A device is provided. The device includes multiple transistors, a first sense circuit, and a precharge circuit. The transistors are coupled to a tracking bit line and configured to generate a first tracking signal. The first sense circuit is configured to generate a first sense tracking signal in response to the first tracking signal. The precharge circuit is configured to generate, in response to a rising edge and a falling edge of the first sense tracking signal, a precharge signal for precharging data lines.

Abstract: A device is disclosed. The device includes a first tracking control line, a first tracking circuit, a first sense circuit, and a precharge circuit. The first tracking control line is configured to transmit a first tracking control signal. The first tracking circuit is configured to generate, in response to the first tracking control signal, a first tracking signal associated with first tracking cells in a memory array. The first sense circuit is configured to receive the first tracking signal, and is configured to generate a first sense tracking signal in response to the first tracking signal. The precharge circuit is configured to generate, in response to a rising edge of the first sense tracking signal and a falling edge of a read enable delayed signal, a precharge signal for precharging data lines associated with memory cell in the memory array. A method is also disclosed herein.

Abstract: A device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. The memory array has bit cells arranged in rows and columns. Each bit line pair is connected to a respective column of bit cells. Each word line is connected to a respective row of bit cells. The modulation circuit is coupled with at least one bit line pair. The control signal generator is coupled with the modulation circuit. The control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. The control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. A method of controlling aforesaid device is also disclosed.

Abstract: A device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. The memory array has bit cells arranged in rows and columns. Each bit line pair is connected to a respective column of bit cells. Each word line is connected to a respective row of bit cells. The modulation circuit is coupled with at least one bit line pair. The control signal generator is coupled with the modulation circuit. The control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. The control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. A method of controlling aforesaid device is also disclosed.