Abstract: A resistive memory apparatus including a memory cell array, at least one dummy transistor and a control circuit is provided. The memory cell array includes a plurality of memory cells. Each of the memory cells includes a resistive switching element. The dummy transistor is electrically isolated from the resistive switching element. The control circuit is coupled to the memory cell array and the dummy transistor. The control circuit is configured to provide a first bit line voltage, a source line voltage and a word line voltage to the dummy transistor to drive the dummy transistor to output a saturation current. The control circuit is further configured to determine a value of a second bit line voltage for driving the memory cells according to the saturation current. In addition, an operating method and a memory cell array of the resistive memory apparatus are also provided.

Abstract: A joining device includes a male member having a shaft portion, and a tubular female member having a mating portion whereto the shaft portion is inserted and fitted, which are capable of detachably joined with each other. The shaft portion includes, on an outer surface thereof and along an axial line direction, a plurality of protruded portions about an axial line of the shaft portion in a cross section taken along an axial line direction and protruded over an entire perimeter. The mating portion includes, on an inner surface thereof and along an axial line direction, a plurality of recessed portions about an axial line of the mating portion in a cross section taken along an axial line direction and recessed over an entire perimeter. The shaft portion and the mating portion are joined by being engaged at the protruded portions and the recessed portions.