Abstract: An apparatus for supporting BGA packages for one or more testing processes is disclosed. The apparatus includes a substrate member. The substrate member has a plurality of contact pads, with each of the contact pads being spatially disposed around a peripheral region of the substrate. The apparatus further includes a plurality of contact regions spatially configured on a portion of the substrate member. Each of the plurality of contact regions is numbered from 1 through N being electrically connected to respective contact pads numbered from 1 through N. The plurality of contact regions is configured to provide electrical contact to respective plurality of balls provided on a BGA package. The apparatus additionally includes a holder device coupled to the substrate member. The holder device is adapted to mechanically hold the BGA package in place to provide mechanical contact between the plurality of balls and respective plurality of contact regions.

Abstract: An apparatus for supporting BGA packages for one or more testing processes is disclosed. The apparatus includes a substrate member. The substrate member has a plurality of contact pads, with each of the contact pads being spatially disposed around a peripheral region of the substrate. The apparatus further includes a plurality of contact regions spatially configured on a portion of the substrate member. Each of the plurality of contact regions is numbered from 1 through N being electrically connected to respective contact pads numbered from 1 through N. The plurality of contact regions is configured to provide electrical contact to respective plurality of balls provided on a BGA package. The apparatus additionally includes a holder device coupled to the substrate member. The holder device is adapted to mechanically hold the BGA package in place to provide mechanical contact between the plurality of balls and respective plurality of contact regions.

Abstract: An apparatus for supporting BGA packages for one or more testing processes is disclosed. The apparatus includes a substrate member. The substrate member has a plurality of contact pads, with each of the contact pads being spatially disposed around a peripheral region of the substrate. The apparatus further includes a plurality of contact regions spatially configured on a portion of the substrate member. Each of the plurality of contact regions is numbered from 1 through N being electrically connected to respective contact pads numbered from 1 through N. The plurality of contact regions is configured to provide electrical contact to respective plurality of balls provided on a BGA package. The apparatus additionally includes a holder device coupled to the substrate member. The holder device is adapted to mechanically hold the BGA package in place to provide mechanical contact between the plurality of balls and respective plurality of contact regions.

Abstract: An apparatus for supporting BGA packages for one or more testing processes is disclosed. The apparatus includes a substrate member. The substrate member has a plurality of contact pads, with each of the contact pads being spatially disposed around a peripheral region of the substrate. The apparatus further includes a plurality of contact regions spatially configured on a portion of the substrate member. Each of the plurality of contact regions is numbered from 1 through N being electrically connected to respective contact pads numbered from 1 through N. The plurality of contact regions is configured to provide electrical contact to respective plurality of balls provided on a BGA package. The apparatus additionally includes a holder device coupled to the substrate member. The holder device is adapted to mechanically hold the BGA package in place to provide mechanical contact between the plurality of balls and respective plurality of contact regions.

Abstract: CMOS I/O structures are described which are latchup-immune by inserting p+ and n+ diffusion guard-rings into the NMOS and PMOS source side of a semiconductor substrate, respectively. P+ diffusion guard-rings surround individual n-channel transistors and n+ diffusion guard-rings surround individual p-channel transistors. These guard-rings, connected to voltage supplies, reduce the shunt resistances of the parasitic SCRs, commonly associated with CMOS structures, from either the p-substrate to p+ guard-ring or the n-well to n+ guard-ring. In a second preferred embodiment a deep p+ implant is implanted into the p+ guard-ring or p-well pickup to decrease the shunt resistances of the parasitic SCRs. The n+ and p+ guard-rings, like the guard-rings of the first preferred embodiment, are connected to positive and negative voltage supplies, respectively.

Abstract: CMOS I/O structures are described which are latchup-immune by inserting p+ and n+ diffusion guard-rings into the NMOS and PMOS source side of a semiconductor substrate, respectively. P+ diffusion guard-rings surround individual n-channel transistors and n+ diffusion guard-rings surround individual p-channel transistors. These guard-rings, connected to voltage supplies, reduce the shunt resistances of the parasitic SCRs, commonly associated with CMOS structures, from either the p-substrate to p+ guard-ring or the n-well to n+ guard-ring. In a second preferred embodiment a deep p+ implant is implanted into the p+ guard-ring or p-well pickup to decrease the shunt resistances of the parasitic SCRs. The n+ and p+ guard-rings, like the guard-rings of the first preferred embodiment, are connected to positive and negative voltage supplies, respectively.

Abstract: CMOS I/O structures are described which are latchup-immune by inserting p+ and n+ diffusion guard-rings into the NMOS and PMOS source side of a semiconductor substrate, respectively. P+ diffusion guard-rings surround individual n-channel transistors and n+ diffusion guard-rings surround individual p-channel transistors. These guard-rings, connected to voltage supplies, reduce the shunt resistances of the parasitic SCRs, commonly associated with CMOS structures, from either the p-substrate to p+ guard-ring or the n-well to n+ guard-ring. In a second preferred embodiment a deep p+ implant is implanted into the p+ guard-ring or p-well pickup to decrease the shunt resistances of the parasitic SCRs. The n+ and p+ guard-rings, like the guard-rings of the first preferred embodiment, are connected to positive and negative voltage supplies, respectively.