Abstract: A method for assessing test adequacy of deep neural networks based on element decomposition is provided. The network testing is divided into black box testing and white box testing, of which key elements are decomposed and defined. Network parameters including a weight matrix and a bias vector are extracted. Importance values of neurons in individual layers of the deep neural network are calculated and clustered, and an importance value hot map of neurons in each layer is generated based on clustering results. Mutation testing, and index calculation and evaluation are performed.

Abstract: The present invention relates to the technical field of energy storage. Disclosed in the invention are a composite electrode for a flow cell, a flow cell, and a stack. The composite electrode comprises: a distribution layer, used to distribute an electrolyte; a reaction layer used to receive the electrolyte of the distribution layer and provide an electrochemical reaction site for the electrolyte; and a contact layer, used to reduce the contact resistance of the distribution layer so as to reduce an internal resistance of the flow cell. In the present invention, by means of providing a distribution layer, a reaction layer and a contact layer, an electrochemical reaction site and an electrolyte distribution site of a composite electrode can be effectively separated, the distribution layer being able to greatly reduce dead zones and channeling caused by uneven flow distribution, and the contact layer being able to greatly reduce the internal resistance of the flow cell.

Abstract: The present disclosure relates to the field of Fischer-Tropsch synthesis reaction catalysts, and discloses a pure phase ?/?? iron carbide catalyst for Fischer-Tropsch synthesis reaction, a preparation method thereof and a Fischer-Tropsch synthesis process, wherein the method comprises the following steps: (1) subjecting the nanometer iron powder or a nano-powder iron compound capable of obtaining the nanometer iron powder through in-situ reduction and H2 to a surface purification treatment at the temperature of 250-510° C.; (2) pretreating the material obtained in the step (1) with H2 and CO at the temperature of 80-180° C., wherein the molar ratio of H2/CO is 1.2-2.8:1; (3) carrying out carbide preparation with the material obtained in the step (2), H2 and CO at the temperature of 180-280° C., wherein the molar ratio of H2/CO is 1.0-3.0:1.

Abstract: The present disclosure relates to the technical field of Fischer-Tropsch synthesis reaction catalysts, and discloses a supported ?/?? iron carbide catalyst for Fischer-Tropsch synthesis reaction, preparation method thereof and Fischer-Tropsch synthesis process, wherein the method comprises the following steps: (1) dipping a catalyst carrier in a ferric salt aqueous solution, drying and roasting the dipped carrier to obtain a catalyst precursor; (2) subjecting the catalyst precursor and H2 to a precursor reduction at the temperature of 300-550° C.; (3) pretreating the material obtained in the step (2) with H2 and CO at the temperature of 90-185° C., wherein the molar ratio of H2/CO is 1.2-2.8:1; (4) preparing carbide with the material obtained in the step (3), H2 and CO at the temperature of 200-300° C., wherein the molar ratio of H2/CO is 1.0-3.2:1.

Abstract: The present disclosure relates to the field of Fischer-Tropsch synthesis reaction catalysts, and discloses a pure phase ?/?? iron carbide catalyst for Fischer-Tropsch synthesis reaction, a preparation method thereof and a Fischer-Tropsch synthesis process, wherein the method comprises the following steps: (1) subjecting the nanometer iron powder or a nano-powder iron compound capable of obtaining the nanometer iron powder through in-situ reduction and H2 to a surface purification treatment at the temperature of 250-510° C.; (2) pretreating the material obtained in the step (1) with H2 and CO at the temperature of 80-180° C., wherein the molar ratio of H2/CO is 1.2-2.8: 1; (3) carrying out carbide preparation with the material obtained in the step (2), H2 and CO at the temperature of 180-280° C., wherein the molar ratio of H2/CO is 1.0-3.0: 1.

Abstract: The present disclosure relates to the technical field of Fischer-Tropsch synthesis reaction catalysts, and discloses a supported ?/?? iron carbide catalyst for Fischer-Tropsch synthesis reaction, preparation method thereof and Fischer-Tropsch synthesis process, wherein the method comprises the following steps: (1) dipping a catalyst carrier in a ferric salt aqueous solution, drying and roasting the dipped carrier to obtain a catalyst precursor; (2) subjecting the catalyst precursor and H2 to a precursor reduction at the temperature of 300-550° C.; (3) pretreating the material obtained in the step (2) with H2 and CO at the temperature of 90-185° C., wherein the molar ratio of H2/CO is 1.2-2.8:1; (4) preparing carbide with the material obtained in the step (3), H2 and CO at the temperature of 200-300° C., wherein the molar ratio of H2/CO is 1.0-3.2:1.

Abstract: The present invention provides a method for mixedly typesetting multi-language text, comprising: acquiring a typesetting rule set (RS), a multi-language (ML), a multi-font (MF), and corresponding selected text; and performing language parsing according to the selected text and the corresponding typesetting RS, ML, and MF, and typesetting the selected text. By virtue of the method and apparatus for mixedly typesetting multi-language text according to the present invention, languages and fonts are automatically and quickly set for multi-language text to be mixedly typeset, and the text is correctly typeset according to typesetting rules according to the languages, thereby solving the problems that mixed typesetting of multi-language text in the prior art is complicated and time-consuming and labor-consuming, and has poor effect.

Abstract: A method for joining a semiconductor integrated circuit (IC) chip in a flip chip configuration, via pillar bump, to solderable metal contact pads, leads or circuit lines on the ciruitized surface of a chip carrier, as well as the resulting chip package, are disclosed. The semiconductor device is attached to the substrate via no flow underfill under thermal compression bonding. Integration of this structure and assembly method enables to incorporate low coefficient of thermal expansion (CTE) no flow underfill and achieve high assembly yield, especially for lead free bumps. The present invention provides a solution for a flip chip package with fine pitch, high pin count and lead free requirements.

Abstract: A method for joining a semiconductor integrated circuit (IC) chip in a flip chip configuration, via pillar bump, to solderable metal contact pads, leads or circuit lines on the ciruitized surface of a chip carrier, as well as the resulting chip package, are disclosed. The semiconductor device is attached to the substrate via no flow underfill under thermal compression bonding. Integration of this structure and assembly method enables to incorporate low coefficient of thermal expansion (CTE) no flow underfill and achieve high assembly yield, especially for lead free bumps. The present invention provides a solution for a flip chip package with fine pitch, high pin count and lead free requirements.