Patents by Inventor Ping Ping Tsai

Ping Ping Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6247349
    Abstract: A porous poly(2-acryl-amido-2-methyl-propane sulphonic acid)-based humidity sensing element is disclosed which provides improved range of humidity measurement and response time with little or no hysteresis. It includes: (a) a non-conductive substrate which has a pair of electrodes formed thereon; (b) a porous poly(2-acryl-amido-2-methyl-propane sulphonic acid) film formed on said electrodes. The porous poly(2-acryl-amido-2-methyl-propane sulphonic acid) film is formed by first forming a non-porous poly(2-acryl-amido-2-methyl-propane sulphonic acid) film on the electrodes, then subjecting the non-porous poly(2-acryl-amido-2-methyl-propane sulphonic acid) film to a heat treatment at temperatures between about 170° C. and 240° C. such that a porous structure is formed in said poly(2-acryl-amido-2-methyl-propane sulphonic acid) film.
    Type: Grant
    Filed: February 18, 1997
    Date of Patent: June 19, 2001
    Assignee: Industrial Technology Research Institute
    Inventors: Chun-Yuan Lee, Ping Ping Tsai, Chia-Jung Lu
  • Patent number: 5855849
    Abstract: A method for forming a solid state humidity sensor is disclosed which comprises the steps of: (a) dissolving a tungstate salt into an aqueous solution; (b) adjusting the pH of the aqueous tungstate salt solution to below 8.5; (c) forming one or a pair of electrodes on an insulating substrate; (d) placing the substrate into the pH-adjusted aqueous tungstate salt solution and heating the aqueous solution containing the substrate at temperatures above 70.degree. C. to thereby form a pyrochlore-type crystalline tungsten trioxide film over the electrode or pair of electrodes; and (e) forming another electrode over the pyrochlore-type crystalline tungsten trioxide film if only one electrode is formed during step (c).
    Type: Grant
    Filed: April 29, 1997
    Date of Patent: January 5, 1999
    Assignee: Industrial Technology Research Institute
    Inventors: Yingjeng James Li, Ping Ping Tsai
  • Patent number: 5741540
    Abstract: A method for forming a solid state humidity sensor is disclosed which comprises the steps of: (a) dissolving a tungstate salt into an aqueous solution; (b) adjusting the pH of the aqueous tungstate salt solution to below 8.5; (c) forming one or a pair of electrodes on an insulating substrate; (d) placing the substrate into the pH-adjusted aqueous tungstate salt solution and heating the aqueous solution containing the substrate at temperatures above 70.degree. C. to thereby form a pyrochlore-type crystalline tungsten trioxide film over the electrode or pair of electrodes; and (e) forming another electrode over the pyrochlore-type crystalline tungsten trioxide film if only one electrode is formed during step (c).
    Type: Grant
    Filed: January 16, 1996
    Date of Patent: April 21, 1998
    Assignee: Industrial Technology Research Institute
    Inventors: Yingjeng James Li, Ping Ping Tsai
  • Patent number: 5434551
    Abstract: A gas sensor that has its heater and sensing layer on opposite sides of the substrate. The gas sensor includes a buffer layer separating the gas-sensing layer from the substrate to improve mechanical strength and electrical properties. The heater is preferably formed of nickel paste and is provided on the back of the substrate.
    Type: Grant
    Filed: July 27, 1993
    Date of Patent: July 18, 1995
    Assignee: Industrial Technology Research Institute
    Inventors: I-Cherng Chen, Ming-Hann Tzeng, Ping-Ping Tsai, Chiu-Fong Liaw, James C. H. Ku
  • Patent number: 5273779
    Abstract: A method of fabricating a gas sensor which comprises a substrate; a buffer layer coated on the substrate; at least one gas sensing layer arranged on the buffer layer; a pair of electrodes disposed on the gas sensing layer; and a catalytic layer coated on the gas sensing layer. A spin coating process is performed, using centrifugal force, to form the layers which are thin and evenly deposited on the substrate. The gas sensing layer of the gas sensor is formed before forming the electrodes of the same such that the heat treatment thereto can be carried out at 800.degree. C. which is much higher than the conventional temperature of 600.degree. C. The bonding of the gas sensing layer to the substrate is thereby much stronger than the conventional gas sensor.
    Type: Grant
    Filed: December 9, 1991
    Date of Patent: December 28, 1993
    Assignee: Industrial Technology Research Institute
    Inventors: I-Cherng Chen, Ming-Hann Tzeng, Ping-Ping Tsai, Chiu-Fong Liaw, James C. H. Ku