Abstract: Semiconductor dies of a semiconductor die package are directly bonded, and a top metal region may be formed over the semiconductor dies. A plurality of conductive terminals may be formed over the top metal region. The conductive terminals are formed of copper (Cu) or another material that enables low-temperature deposition process techniques, such as electroplating, to be used to form the conductive terminal. In this way, the conductive terminals of the semiconductor die packages described herein may be formed at a relatively low temperature. This reduces the likelihood of thermal deformation of semiconductor dies in the semiconductor die packages. The reduced thermal deformation reduces the likelihood of warpage, breakage, and/or other types of damage to the semiconductor dies of the semiconductor die packages, which may increase performance and/or increase yield of semiconductor die packages.

Abstract: In some embodiments, the present disclosure relates to a method that includes bonding a first wafer to a second wafer to form a wafer stack and removing a top portion of the second wafer. A first trim blade having a first blade width is aligned over the second wafer. The first trim blade is used to form a trench that separates a central portion of the second wafer from a peripheral portion of the second wafer. The trench is arranged at a first distance from an outer perimeter of the second wafer, and extends from a top surface of the second wafer to a trench depth beneath the top surface of the first wafer. A second trim blade having a second blade width is aligned over the peripheral portion, the second blade width being greater than the first blade width. The peripheral portion is removed using the second trim blade.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a first via disposed within a dielectric structure on a substrate, and a second via disposed within the dielectric structure and laterally separated from the first via by the dielectric structure. The first via has a first width that is smaller than a second width of the second via. An interconnect wire vertically contacts the second via and extends laterally past an outermost sidewall of the second via. A through-substrate via (TSV) is arranged over the second via and extends through the substrate. The TSV has a minimum width that is smaller than the second width of the second via. The second via has opposing outermost sidewalls that are laterally outside of the TSV.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes bonding a first semiconductor wafer to a second semiconductor wafer. A bond interface is disposed between the first and second semiconductor wafers. The first semiconductor wafer has a peripheral region laterally surrounding a central region. A support structure is formed between a first outer edge of the first semiconductor wafer and a second outer edge of the second semiconductor wafer. The support structure is disposed within the peripheral region. A thinning process is performed on the second semiconductor wafer.

Abstract: In some embodiments, the present disclosure relates to method of forming an integrated circuit, including forming a semiconductor device on a frontside of a semiconductor substrate; depositing a dielectric layer over a backside of the semiconductor substrate; patterning the dielectric layer to form a first opening in the dielectric layer so that the first opening exposes a surface of the backside of the semiconductor substrate; depositing a glue layer having a first thickness over the first opening; filling the first opening with a first material to form a backside contact that is separated from the semiconductor substrate by the glue layer; and depositing more dielectric layers, bonding contacts, and bonding wire layers over the dielectric layer to form a second bonding structure on the backside of the semiconductor substrate, so that the backside contact is coupled to the bonding contacts and the bonding wire layers.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a standard contact disposed within a dielectric structure on a substrate. An oversized contact is disposed within the dielectric structure and is laterally separated from the standard contact. The oversized contact has a larger width than the standard contact. An interconnect wire vertically contacts the oversized contact. A through-substrate via (TSV) vertically extends through the substrate. The TSV physically and vertically contacts the oversized contact or the interconnect wire. The TSV vertically overlaps the oversized contact or the interconnect wire over a non-zero distance.

Abstract: In some embodiments, the present disclosure relates to method of forming an integrated circuit, including forming a semiconductor device on a frontside of a semiconductor substrate; depositing a dielectric layer over a backside of the semiconductor substrate; patterning the dielectric layer to form a first opening in the dielectric layer so that the first opening exposes a surface of the backside of the semiconductor substrate; depositing a glue layer having a first thickness over the first opening; filling the first opening with a first material to form a backside contact that is separated from the semiconductor substrate by the glue layer; and depositing more dielectric layers, bonding contacts, and bonding wire layers over the dielectric layer to form a second bonding structure on the backside of the semiconductor substrate, so that the backside contact is coupled to the bonding contacts and the bonding wire layers.

Abstract: The present disclosure relates to a semiconductor wafer structure including a semiconductor substrate and a plurality of semiconductor devices disposed along the semiconductor substrate. A dielectric stack including a plurality of dielectric layers is arranged over the semiconductor substrate. A conductive interconnect structure is within the dielectric stack. A seal ring layer is over the dielectric stack and laterally surrounds the dielectric stack along a first sidewall of the dielectric stack. The seal ring layer includes a first protrusion that extends into a first trench in the semiconductor substrate.

Abstract: Various embodiments of the present disclosure are directed towards a shared frontside pad/bridge layout for a three-dimensional (3D) integrated circuit (IC), as well as the 3D IC and a method for forming the 3D IC. A second IC die underlies the first IC die, and a third IC die underlies the second IC die. A first-die backside pad, a second-die backside pad, and a third die backside pad are in a row extending in a dimension and overlie the first, second, and third IC dies. Further, the first-die, second-die, and third-die backside pads are electrically coupled respectively to individual semiconductor devices of the first, second, and third IC dies. The second and third IC dies include individual pad/bridge structures at top metal (TM) layers of corresponding interconnect structures. The pad/bridge structures share the shared frontside pad/bridge layout and provide lateral routing in the dimension for the aforementioned electrical coupling.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a standard contact disposed within a dielectric structure on a substrate. An oversized contact is disposed within the dielectric structure and is laterally separated from the standard contact. The oversized contact has a larger width than the standard contact. An interconnect wire vertically contacts the oversized contact. A through-substrate via (TSV) vertically extends through the substrate. The TSV physically and vertically contacts the oversized contact or the interconnect wire. The TSV vertically overlaps the oversized contact or the interconnect wire over a non-zero distance.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

Abstract: In some embodiments, the present disclosure relates to method of forming an integrated circuit, including forming a semiconductor device on a frontside of a semiconductor substrate; depositing a dielectric layer over a backside of the semiconductor substrate; patterning the dielectric layer to form a first opening in the dielectric layer so that the first opening exposes a surface of the backside of the semiconductor substrate; depositing a glue layer having a first thickness over the first opening; filling the first opening with a first material to form a backside contact that is separated from the semiconductor substrate by the glue layer; and depositing more dielectric layers, bonding contacts, and bonding wire layers over the dielectric layer to form a second bonding structure on the backside of the semiconductor substrate, so that the backside contact is coupled to the bonding contacts and the bonding wire layers.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a standard via disposed on a first side of a substrate. An oversized via is disposed on the first side of the substrate and is laterally separated from the standard via. The oversized via has a larger width than the standard via. An interconnect wire vertically contacting the oversized via. A through-substrate via (TSV) extends from a second side of the substrate, and through the substrate, to physically contact the oversized via or the interconnect wire. The TSV has a minimum width that is smaller than a width of the oversized via.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a standard via disposed on a first side of a substrate. An oversized via is disposed on the first side of the substrate and is laterally separated from the standard via. The oversized via has a larger width than the standard via. An interconnect wire vertically contacting the oversized via. A through-substrate via (TSV) extends from a second side of the substrate, and through the substrate, to physically contact the oversized via or the interconnect wire. The TSV has a minimum width that is smaller than a width of the oversized via.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

Abstract: In some embodiments, the present disclosure relates to a three dimensional (3D) integrated circuit (IC) stack, including a first IC die having a first substrate and a first interconnect structure over a frontside of the first substrate; a second IC die having a second substrate and a second interconnect structure over the frontside of the second substrate; and a third IC die vertically between the first and second IC dies and having a third substrate, a third interconnect structure over the frontside of the third substrate, and a third bonding structure over a backside of the third substrate. A heat dissipation path extends from the third substrate to at least the first or second substrate, and includes a backside contact that extends from the third bonding structure to the backside of the third substrate and that is thermally coupled to at least the first or second interconnect structure.

Abstract: In some embodiments, the present disclosure relates to a three dimensional (3D) integrated circuit (IC) stack, including a first IC die having a first substrate and a first interconnect structure over a frontside of the first substrate; a second IC die having a second substrate and a second interconnect structure over the frontside of the second substrate; and a third IC die vertically between the first and second IC dies and having a third substrate, a third interconnect structure over the frontside of the third substrate, and a third bonding structure over a backside of the third substrate. A heat dissipation path extends from the third substrate to at least the first or second substrate, and includes a backside contact that extends from the third bonding structure to the backside of the third substrate and that is thermally coupled to at least the first or second interconnect structure.