Abstract: A method of manufacturing a semiconductor device includes providing a carrier, disposing a first pad on the carrier, forming a post on the first pad, and disposing a joint adjacent to the post and the first pad to form a first entire contact interface between the first pad and the joint and a second entire contact interface between the first pad and the post. The first entire contact interface and the second entire contact interface are flat surfaces.

Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes a substrate having a first active region, a second active region, and a word line connecting region between the first active region and the second active region, a first gate pattern extending along a first direction from the first active region to the second active region, a second gate pattern extending along the first direction from the first active region to the second active region, a first magnetic tunneling junction (MTJ) between the first gate pattern and the second pattern and within the word line connecting region, and a second MTJ between the first gate pattern and the second gate pattern in the first active region. Preferably, top surfaces of the first MTJ and the second MTJ are coplanar.

Abstract: The present disclosure relates to a method, device and storage medium for post-processing in multi-target tracking. According to an embodiment of the present disclosure, the method comprises making attempts to split a tracklet indicative of a trajectory of a single target by performing operations of: determining a re-identification feature set of an image patch sequence by determining a re-identification feature of each image patch in the image patch sequence of the tracklet; determining whether a candidate identification switch image patch is present in the tracklet based on feature similarities of a plurality of re-identification feature pairs in the re-identification feature set; in a case where a determination result is “yes”, verifying whether it is credible that identification-switch has occurred at the candidate identification switch image patch; and in a case where a verification result is “credible”, splitting the tracklet into two tracklets based on the candidate identification switch image patch.

Abstract: A myogenin-expressing fibroblast-like cell (MEFLC) line and a construction method and a use thereof are provided. The MEFLC line was deposited in the Guangdong Microbial Culture Collection Center (GDMCC) on Apr. 23, 2022 with an accession number of GDMCC NO: 62409. The construction method includes: 1) constructing a pCW-MYOG-T2A-Puro lentivirus; 2) infecting a human induced pluripotent stem cell (iPSC) line with the lentivirus, inducing the expression of an MYOG gene, and screening out a positive monoclonal cell line; 3) subjecting the positive monoclonal cell line to expanded cultivation, during which the expression of the MYOG gene is continuously induced; and 4) changing cultivation conditions, continuously inducing the expression of the MYOG gene, and screening out positive monoclonal cell lines to ensure the purity of MYOG-positive cells until a cell morphology changes significantly into fibroblastoid cells to obtain the MEFLC line.

Abstract: The present invention relates to a molded article with a metallic appearance and a process for making the same. Particularly, the present invention relates to a molded article having a part that comprises a layer with a sandwich structure.

Abstract: A field of asymmetric catalytic synthesis, and in particular a preparation method for a high optical indoxacarb intermediate includes reacting 5-chloro-2-methoxycarbonyl-1-indanone ester (or indanone ester for short) with an oxidizing agent in the presence of a chiral Zr-salen polymer to obtain an indoxacarb intermediate (2S)-5-chloro-2,3-dihydro-2-hydroxy-1-oxo-1H-indole-2-carboxylic acid methyl ester. The yield is stabilized between 86% and 90%, and the S-enantiomer content is up to 99%. Such catalyst can replace catalysts such as cinchonine, and greatly increase the content of the effective S-enantiomer of the indoxacarb, so that the content of the hydroxyl intermediate S-enantiomer of the indoxacarb is raised from 75% to 99% or more. In addition, the chiral Zr-salen polymer catalyst is recycled without retreatment, and can be recycled at least 5 times or more, greatly reducing the production cost and laying a foundation for the industrial production of high quality indoxacarb.

Abstract: An external dermal composition and a method for beautifying skin are provided. The external dermal composition mainly includes a double nitrosyl-iron complex and a pharmaceutically acceptable additive. The external dermal composition delivers nitric oxide to a user's skin to beautify the skin when applied to the user's skin.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, a top electrode is formed on the MTJ stack, the top electrode, the free layer, and the barrier layer are removed, a first cap layer is formed on the top electrode, the free layer, and the barrier layer, and the first cap layer and the pinned layer are removed to form a MTJ and a spacer adjacent to the MTJ.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, a top electrode is formed on the MTJ stack, the top electrode, the free layer, and the barrier layer are removed, a first cap layer is formed on the top electrode, the free layer, and the barrier layer, and the first cap layer and the pinned layer are removed to form a MTJ and a spacer adjacent to the MTJ.

Abstract: According to one embodiment, a sensor system includes a pipe and a sensor. The sensor is configured to detect a detection target substance in the pipe. The sensor includes a base, a first detection part, and a second detection part. The base includes a first base region and a second base region. The first detection part includes a first support part, a first connection part, and a first detection element. The second detection art includes a second support part, a second connection part, and a second detection element.

Abstract: A laser welding system for joining a first workpiece to a second workpiece includes a laser welder configured to emit a laser beam at a power to form a weld to join the first workpiece and the second workpiece at a weld location. The laser welding system includes a plasma protection fixture coupled to a surface of at least the first workpiece. The plasma protection fixture defines an opening configured to receive the laser beam. The opening has a perimeter that surrounds and is spaced apart from the weld. The plasma protection fixture has a height above the surface of at least the first workpiece about the perimeter of the opening that is defined based on the power of the laser beam.

Abstract: A method of fabricating magnetoresistive random access memory, including providing a substrate, forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on the substrate, wherein a material of the top electrode layer is titanium nitride, a material of the hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in the titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer, and patterning the bottom electrode layer, the magnetic tunnel junction stack, the top electrode layer and the hard mask layer into multiple magnetoresistive random access memory cells.

Abstract: A program control circuit for an antifuse-type one time programming memory cell array is provided. When the program action is performed, the program control circuit monitors the program current from the memory cell in real time and increases the program voltage at proper time. When the program control circuit judges that the program current generated by the memory cell is sufficient, the program control circuit confirms that the program action is completed.

Abstract: A user requests explanation of a term. In response, a definition is provided. The user can indicate that the user does not understand a new term included in the definition. In response, explanation information is customized based on analysis of the initial term and the new term, and then the explanation information is provided to the user.

Abstract: Methods and devices according to various embodiments perform full-wave inversion jointly for datasets acquired at different times over the same underground formation using a time-lag cost function with target regularization terms. This approach improves the 4D signal within reservoirs and suppresses 4D noise outside.

Abstract: An audio mixing method for network streaming includes the steps of establishing a network streaming connection between the first end and the second end, generating a text voiced audio signal based on a trigger signal by the first end, mixing a play signal and the text voiced audio signal into a play signal with the text voiced audio signal, in the state of the network streaming connection, transmitting the play signal with text voiced audio signal to the second end, and the play signal with text voiced audio signal is played by the second end.

Abstract: A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the array region includes a magnetic random access memory (MRAM) region and a logic region and the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.