Abstract: A magnetic multi-pole propulsion array system is applied to at least one external cathode and includes a plurality of magnetic multi-pole thrusters connected adjacent to each other. Each magnetic multi-pole thruster includes a propellant provider, a discharge chamber, an anode and a plurality of magnetic components. The propellant provider outputs propellant. The discharge chamber is connected with the propellant provider to accommodate the propellant. The anode is disposed inside the discharge chamber to generate an electric field. The plurality of magnetic components is respectively disposed on several sides of the discharge chamber. One of the several sides of the discharge chamber of the magnetic multi-pole thruster is applied for one side of a discharge chamber of another magnetic multi-pole thruster.

Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.

Abstract: A system and computer-implemented method are provided for manufacturing a semiconductor electronic device. An assembler receives a jig and a boat supporting a die. The assembler includes a separator that separates the jig into a first jig portion and a second jig portion and a loader that positions the boat between the first jig portion and the second jig portion. A robot receives an assembly prepared by the assembler and manipulates a locking system that fixes an alignment of the boat relative to the first jig portion and the second jig portion to form a locked assembly. A process chamber receives the locked assembly and subjects the locked assembly to a fabrication operation.

Abstract: The invention provides a method for fabricating a fin structure for fin field effect transistor, including following steps. Providing a substrate, including a fin structure having a silicon fin and a single mask layer just on a top of the silicon fin, the single mask layer being as a top portion of the fin structure. Forming a stress buffer layer on the substrate and conformally covering over the fin structure. Performing a nitridation treatment on the stress buffer layer to have a nitride portion. Perform a flowable deposition process to form a flowable dielectric layer to cover over the fin structures. Annealing the flowable dielectric layer. Polishing the flowable dielectric layer, wherein the nitride portion of the stress buffer layer is used as a polishing stop.

Abstract: The invention provides a method for fabricating a fin structure for fin field effect transistor, including following steps. Providing a substrate, including a fin structure having a silicon fin and a single mask layer just on a top of the silicon fin, the single mask layer being as a top portion of the fin structure. Forming a stress buffer layer on the substrate and conformally covering over the fin structure. Performing a nitridation treatment on the stress buffer layer to have a nitride portion. Perform a flowable deposition process to form a flowable dielectric layer to cover over the fin structures. Annealing the flowable dielectric layer. Polishing the flowable dielectric layer, wherein the nitride portion of the stress buffer layer is used as a polishing stop.

Abstract: The invention provides a fin structure for a fin field effect transistor, including a substrate. The substrate includes a plurality of silicon fins, wherein a top of each one of the silicon fins is a round-like shape in a cross-section view. An isolation layer is disposed on the substrate between the silicon fins at a lower portion of the silicon fins while an upper portion of the silicon fins is exposed. A stress buffer layer is disposed on a sidewall of the silicon fins between the isolation layer and the lower portion of the silicon fins. The stress buffer layer includes a nitride portion.

Abstract: A method, a system, and non-transitory computer readable medium for power and ground (P/G) routing for an integrated circuit (IC) design are provided. The method includes generating input features for a machine-learning (ML) model based on IR drop and routing congestion analysis for a P/G network for the IC design, and modifying a set of P/G vias or a set of P/G wires in the P/G network according to modifications identified by the ML model. The ML model comprises a feature extractor pre-trained using a plurality of images of P/G vias and P/G wires.

Abstract: The invention provides a fin structure for a fin field effect transistor, including a substrate. The substrate includes a plurality of silicon fins, wherein a top of each one of the silicon fins is a round-like shape in a cross-section view. An isolation layer is disposed on the substrate between the silicon fins at a lower portion of the silicon fins while an upper portion of the silicon fins is exposed. A stress buffer layer is disposed on a sidewall of the silicon fins between the isolation layer and the lower portion of the silicon fins. The stress buffer layer includes a nitride portion.

Abstract: A semiconductor structure having a metal gate includes a dielectric layer. The dielectric layer having a recess is disposed on a substrate, wherein the dielectric layer has a top part and a bottom part, and the tensile stress of the top part is larger than the tensile stress of the bottom part, thereby the recess having a sidewall profile tapering from bottom to top. The present invention also provides a method of forming said semiconductor structure.

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

Abstract: A fin field effect transistor (FinFET) on a silicon-on-insulator and method of forming the same are provided in the present invention. The FinFET includes first fin structure, second fin structure and an insulating layer. The first fin structure and the second fin structure are disposed on a substrate. The insulating layer covers the first fin structure and the second fin structure and exposes a first portion of the first fin structure and a second portion of the second fin structure. The first fin structure has a first height and the second fin structure has a second height different from the first height, and a top surface of the first fin structure and a top surface of the second fin structure are at different levels.

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.