Abstract: Briefly, in accordance with one embodiment of the invention, a resonator such as an electromechanical resonator may be coupled with a cancellation network to reduce and/or cancel an anti-resonance effect in the resonator, which may be due to, for example, a static capacitance inherent in the resonator. Cancellation of an anti resonance effect from the resonator response may allow a resonance effect of the resonator to be a predominant effect to allow the resonator to be utilized as a bandpass filter having a relatively higher Q, for example in a bandpass sigma-delta modulator that may be utilized in a digital RF receiver.

Abstract: A cancellation circuit to remove the anti-resonance signal from a resonator. Micro-mechanical and surface and bulk acoustic wave resonators include an anti-resonance in an output signal. This has an undesirable effect on certain types of systems in their function and performance. An anti-resonance cancellation circuit removes the anti-resonance from the output of the resonators by providing a signal which is subtracted from the output of the resonator. The cancellation circuit includes a capacitor which is matched to the static capacitance of the resonator. The loads of the resonator and cancellation network are also matched.

Abstract: A method is provided for processing a substrate surface by delivering a first gas mixture comprising a first organosilicon compound, a first oxidizing gas, and one or more hydrocarbon compounds into a chamber at deposition conditions sufficient to deposit a first low dielectric constant film on the substrate surface. A second gas mixture having a second organosilicon compound and a second oxidizing gas is delivered into the chamber at deposition conditions sufficient to deposit a second low dielectric constant film on the first low dielectric constant film. The flow rate of the second oxidizing gas into the chamber is increased, and the flow rate of the second organosilicon compound into the chamber is decreased to deposit an oxide rich cap on the second low dielectric constant film.

Abstract: The invention provides methods for enhancing drought tolerance in a plant, by infecting the plant with a plant virus, or infectious material derived from a plant virus. The plant thereby displays fewer, less severe, and/or delayed symptoms of dehydration. The reduction in symptoms allows for improved plant growth.

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Abstract: Briefly, one or more embodiments of an amplifier, including example applications, are described.

Abstract: A frame includes a frame body and a plurality of fixing units. The frame body includes a base and a plurality of sidewalls extending from the peripheral of the base, the base and the sidewalls cooperatively forming a receiving cavity to receive the liquid crystal module. The fixing units are configured for enclosing the sidewalls and confining the liquid crystal module into the receiving cavity of the frame body. Each fixing unit is securely bounded with the liquid crystal module and the sidewall of the frame body respectively. A display device using the frame is also provided, which can be assembled efficiently and decreases the cost of materials.

Abstract: A backlight module includes a frame, a light guide plate, a FPCB and a plurality of point light sources. The light guide plate has a light incident surface. The point light sources are electrically connected with one surface of the FPCB, each point light source having an emitting surface. The frame includes a plurality of connecting sidewalls encircling the light guide plate. An inner surface of the sidewall facing the light incident surface defines a plurality of elastic members thereon according to the point light sources. Each elastic member pushes the corresponding point light source towards the light guide plate, so as to have the final position of the emitting surface of each point light source come in contact with the light incident surface. The present backlight module has a highly light energy utilization rate.

Abstract: The Indo-Pacific marine sponge Ircinia ramosa has been found to contain two powerful (GI50 0.001 to <0.0001 ?g/ml) murine and human cancer cell growth inhibitors, denominated herein as irciniastatin A and irciniastatin B. Both were isolated (10-3 to 10-4% yields) by cancer cell line bioassay-guided techniques and named irciniastatins A (1) and B (2). Structural elucidation by a combination of spectral analyses, primarily high resolution mass and 2D-NMR (principally APT, HMQC, HMBC and ROESY) revealed unusual structures 1 and 2.

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Abstract: Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

Abstract: High purity perfluoroelastomer composites and processes for producing the same are provided. High purity composites may be formed from compositions comprising a crosslinkable fluoroelastomer terpolymer of TFE, PAVE, and CNVE, and functionalized PTFE, which may be crosslinked to form crosslinked composites having low metal content and low compression set. Emulsion mixtures for forming the high purity composites are also provided.

Abstract: Crosslinkable perfluoroelastomer compositions having low metal content and low compression set when crosslinked, and processes for producing the same, are provided. Compositions comprising terpolymers of TFE, PAVE, and CNVE having a metal content of less than 3000 ppb may be formed into high purity transparent perfluoroelastomer parts.

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

Abstract: A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.

Abstract: A cancellation circuit to remove the anti-resonance signal from a resonator. Micro-mechanical and surface and bulk acoustic wave resonators include an anti-resonance in an output signal. This has an undesirable effect on certain types of systems in their function and performance. An anti-resonance cancellation circuit removes the anti-resonance from the output of the resonators by providing a signal which is subtracted from the output of the resonator. The cancellation circuit includes a capacitor which is matched to the static capacitance of the resonator. The loads of the resonator and cancellation network are also matched.

Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

Abstract: A bandpass sigma-delta modulator using acoustic resonators or micro-mechanical resonators. In order to improve resolution at high frequencies, acoustic resonators or micro-mechanical resonators are utilized in a sigma-delta modulator instead of electronic resonators. The quantized output is fed back using a pair of D/A converters to an input summation device. In fourth order devices, the feed back is to two summation devices in series. Such a sigma-delta modulator is usable in a software defined radio cellular telephone system and in other applications where high-frequency and high-resolution A/D conversion is required.