Abstract: A method for forming a chip package structure is provided. The method includes removing a first portion of a substrate to form a first recess in the substrate. The method includes forming a buffer structure in the first recess. A first Young's modulus of the buffer structure is less than a second Young's modulus of the substrate. The method includes forming a first wiring structure over the buffer structure and the substrate. The method includes bonding a chip package to the first wiring structure. The chip package has an interposer substrate and a chip structure over the interposer substrate, and a first corner of the interposer substrate and a second corner of the chip structure overlap the buffer structure in a top view of the chip package and the buffer structure.

Abstract: A filament forming method includes: performing first stage to apply first bias including gate and drain voltages to a resistive memory unit plural times until read current reaches first saturating state, latching read current in first saturating state as saturating read current, determining whether rate of increase of saturating read current is less than first threshold value; when rate of increase of saturating read current is not less than first threshold value, performing second stage to apply second bias, by increasing gate voltage and decreasing drain voltage, to the resistive memory unit plural times until read current reaches second saturating state, latching read current in second saturating state as saturating read current and determining whether rate of increase of saturating read current is less than first threshold value; finishing the method when rate of increase of saturating read current is less than first threshold value and saturating read current reaches target current value.

Abstract: A forming operation of resistive memory device is provided. The operation includes: applying a pre-forming gate voltage and a pre-forming bit line voltage to a target memory cell; performing a dense switching forming operation, wherein the dense switching forming operation includes alternately performing dense set operations and dense reset operations on the target memory cell, wherein the dense set operation includes applying a dense switching gate voltage and a dense set bit line voltage; and performing a normal set operation on the target memory cell, wherein the normal set operation includes applying a normal set gate voltage and a normal set bit line voltage to the target memory cell, the normal set gate voltage is greater than the pre-forming gate voltage and the dense switching gate voltage, and the normal set bit line voltage is less than the pre-forming bit line voltage and the dense set bit line voltage.

Abstract: Aspects of the disclosure provide a method for merging compressed access units according to compression rates and/or positions of the respective compressed access units. The method can include receiving a sequence of compressed access units corresponding to a sequence of raw access units partitioned from an image or a video frame and corresponding to a sequence of memory spaces in a frame buffer, determining a merged access unit including at least two consecutive compressed access units based on compression rates and/or positions of the sequence of compressed access units. The merged access unit is to be stored in the frame buffer with a reduced gap between the at least two consecutive compressed access units compared with storing the at least two consecutive compressed access units in corresponding memory spaces in the sequence of memory spaces.

Abstract: Aspects of the disclosure provide a method for merging compressed access units according to compression rates and/or positions of the respective compressed access units. The method can include receiving a sequence of compressed access units corresponding to a sequence of raw access units partitioned from an image or a video frame and corresponding to a sequence of memory spaces in a frame buffer, determining a merged access unit including at least two consecutive compressed access units based on compression rates and/or positions of the sequence of compressed access units. The merged access unit is to be stored in the frame buffer with a reduced gap between the at least two consecutive compressed access units compared with storing the at least two consecutive compressed access units in corresponding memory spaces in the sequence of memory spaces.