Abstract: A part is adapted to be used in a semiconductor processing equipment. The part includes a substrate and a protective coating. The protective coating covers at least a part of the substrate, is made of silicon carbide, and has an atomic ratio of carbon in the protective coating increases in a direction away from the substrate while an atomic ratio of silicon in the protective coating decreases in the direction. The atomic ratio of silicon in the protective coating is larger than that of the carbon near the substrate, and the atomic ratio of silicon in the protective coating is smaller than that of carbon near the outer surface of the protective coating. A method for making the part is also provided.

Abstract: A plasma monitoring device including at least one first cathode, at least one second cathode, a first collimator group, a first mass flow controller group, and a plasma emission monitor is disclosed. The first cathode has a first target and provides a first plasma. The second cathode has a second target and provides a second plasma. The first collimator group is disposed corresponding to the first cathode to detect a first spectrum of the first plasma. The first mass flow controller group provides gas to the first cathode and the second cathode through a first gas supply pipe group and a second gas supply pipe group. The plasma emission monitor adjusts a flow rate of the gas provided by the first mass flow controller group according to the first spectrum of the first plasma. The first target and the second target are the same. A total number of collimator groups is less than a total number of cathodes.

Abstract: The present invention discloses that a plasma aerosol device includes a gas tunnel, a dielectric barrier discharge module, and a liquid tunnel. The invention uses a mechanism similar to a dielectric barrier discharge (DBD) electrode system, thus to enable generating a plasma active water mist which riches in free radicals such as reactive nitrogen species (RNS) and reactive oxygen species (ROS). Therefore, this invention is able to be used in medical, sterilization, agriculture and preservation industries.

Abstract: The invention discloses a flexible transparent conductive composite film and the manufacturing method thereof. The aforementioned flexible transparent conductive composite film is formed by depositing the first target material and the second target material in an alternating manner by HiPIMS. Therefore, the post-anneal step of the traditional method can be omitted, and the manufacturing efficiency of the flexible transparent conductive composite films is significantly improved.

Abstract: The present invention discloses an organic polymer film and a manufacturing method thereof. The organic polymer film is mainly manufactured by the following steps. Firstly, the step (A) provides a xylene precursor and a substrate, and the step (B) places the substrate inside of a plasma equipment. After that, the step (C) evacuates the plasma equipment while introducing a carrier gas which carries vapor of the xylene precursor, and the step (D) turns on a pulse power supply system of the plasma equipment, generating a short pulse for plasma ignition. Finally, the step (E) forms the organic polymer film on the substrate. In the aforementioned steps, the frequency of the short pulse plasma is between 1 Hz˜10,000 Hz, and the pulse period of the short pulse plasma is between 1 ?s˜60 ?s.

Abstract: The present invention discloses an organic polymer film and a manufacturing method thereof. The organic polymer film is mainly manufactured by the following steps. Firstly, the step (A) provides a xylene precursor and a substrate, and the step (B) places the substrate inside of a plasma equipment. After that, the step (C) evacuates the plasma equipment while introducing a carrier gas which carries vapor of the xylene precursor, and the step (D) turns on a pulse power supply system of the plasma equipment, generating a short pulse for plasma ignition. Finally, the step (E) forms the organic polymer film on the substrate. In the aforementioned steps, the frequency of the short pulse plasma is between 1 Hz˜10,000 Hz, and the pulse period of the short pulse plasma is between 1 ?s˜60 ?s.

Abstract: The invention discloses a flexible transparent conductive composite film and the manufacturing method thereof. The aforementioned flexible transparent conductive composite film is formed by depositing the first target material and the second target material in an alternating manner by HiPIMS. Therefore, the post-anneal step of the traditional method can be omitted, and the manufacturing efficiency of the flexible transparent conductive composite films is significantly improved.

Abstract: The present invention discloses a plasma aerosol device, comprising a gas tunnel, a dielectric barrier discharge module, and a liquid tunnel. The invention uses a mechanism similar to a dielectric barrier discharge (DBD) electrode system, thus to enable generating a plasma active water mist which riches in free radicals such as reactive nitrogen species (RNS) and reactive oxygen species (ROS). Therefore, this invention is able to be used in medical, sterilization, agriculture and preservation industries.

Abstract: The present invention relates to a substrate with a crystallized silicon film and manufacturing method thereof, wherein the substrate with the crystallized silicon film comprises: a substrate, which is a polymer substrate; and a crystallized silicon film, which is formed on at least one surface of the substrate, wherein the crystallized silicon film comprises a plurality of silicon crystals with column structures, and the crystallinity of the crystallized silicon film is higher than 90%.

Abstract: The present invention relates to a substrate with a crystallized silicon film and manufacturing method thereof, wherein the substrate with the crystallized silicon film comprises: a substrate, which is a polymer substrate; and a crystallized silicon film, which is formed on at least one surface of the substrate, wherein the crystallized silicon film comprises a plurality of silicon crystals with column structures, and the crystallinity of the crystallized silicon film is higher than 90%.

Abstract: The present invention relates to a substrate with a crystallized silicon film and manufacturing method thereof, wherein the substrate with the crystallized silicon film comprises: a substrate, which is a polymer substrate; and a crystallized silicon film, which is formed on at least one surface of the substrate, wherein the crystallized silicon film comprises a plurality of silicon crystals with column structures, and the crystallinity of the crystallized silicon film is higher than 90%.

Abstract: The present invention relates to a substrate with a crystallized silicon film and manufacturing method thereof, wherein the substrate with the crystallized silicon film comprises: a substrate, which is a polymer substrate; and a crystallized silicon film, which is formed on at least one surface of the substrate, wherein the crystallized silicon film comprises a plurality of silicon crystals with column structures, and the crystallinity of the crystallized silicon film is higher than 90%.